ADC113TUQ-13 Equivalent & Substitute Parts

Part Overview

The ADC113TUQ-13 is a pre-biased dual NPN bipolar transistor (BJT) manufactured by Diodes Incorporated in a surface mount SOT-363 package. This component integrates two NPN transistors with internal biasing resistors, designed for applications requiring compact switching and amplification functionality. The device is rated for 50V collector-emitter breakdown voltage, 100mA maximum collector current, and 270mW power dissipation.

The ADC113TUQ-13 is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for systems utilizing this component.

Substiute Parts

ADC113TUQ-13

Diodes IncorporatedIn Stock: 897ADC113TUQ-13 Datasheet

Current PartRFQ

SMUN5230DW1T1G

onsemiIn Stock: 62456SMUN5230DW1T1G Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the ADC113TUQ-13 is determined by the following critical parameters that must be matched or exceeded:

Electrical Parameters:

• Transistor configuration: 2 NPN - Pre-Biased (Dual)
• Maximum collector current: 100mA
• Maximum collector-emitter breakdown voltage: 50V
• Base resistor value: 1kOhms
• Maximum collector cutoff current: 500nA
• Package compatibility: SOT-363 (6-TSSOP, SC-88)

Compliance & Status:

• RoHS3 compliance
• Surface mount technology
• Moisture sensitivity level: 1 (Unlimited)

The SMUN5230DW1T1G from onsemi satisfies all critical electrical parameters and package requirements. This substitute maintains functional equivalence through identical transistor configuration, matching maximum ratings for current and voltage, and compatible internal biasing resistor values. Both components are RoHS3 compliant and utilize the same SOT-363 package footprint.

Parameter Comparison

Engineering Selection Recommendations

Primary Substitute: SMUN5230DW1T1G

The SMUN5230DW1T1G is the recommended substitute for the obsolete ADC113TUQ-13. This selection is based on the following engineering criteria:

Electrical Compatibility: All critical electrical parameters align between the two components. Both devices feature identical transistor configuration (dual NPN pre-biased), matching maximum collector current (100mA), and identical collector-emitter breakdown voltage (50V). The base resistor value of 1kOhms is common to both parts, ensuring equivalent biasing behavior in circuit applications.

Package & Mounting Compatibility: Both components utilize the SOT-363 package (6-TSSOP, SC-88) in surface mount configuration. PCB footprints and reflow soldering processes are directly compatible without design modification.

Compliance & Availability: The SMUN5230DW1T1G maintains ROHS3 compliance and carries AEC-Q101 automotive qualification equivalent to the original part. The substitute is currently in active production status with substantial inventory availability (62,390 pieces), ensuring reliable supply chain access compared to the obsolete ADC113TUQ-13.

Power Dissipation Consideration: The SMUN5230DW1T1G is rated for 187mW maximum power dissipation, compared to 270mW for the ADC113TUQ-13. Circuit designs operating at or below 187mW dissipation levels will function identically. Applications requiring power dissipation between 187mW and 270mW require thermal analysis to confirm the substitute operates within safe operating limits.

Frequently Asked Questions (FAQ)

Q: Can the SMUN5230DW1T1G directly replace the ADC113TUQ-13 without PCB modifications?

A: Yes. Both components share identical SOT-363 package geometry and pin configuration. No PCB layout changes are required for mechanical or electrical compatibility.

Q: What is the significance of the different power ratings (270mW vs. 187mW)?

A: The ADC113TUQ-13 is rated for 270mW maximum power dissipation, while the SMUN5230DW1T1G is rated for 187mW. The substitute can be used in applications dissipating up to 187mW without thermal concerns. For applications between 187mW and 270mW, thermal analysis of the specific circuit is necessary to confirm the substitute operates within safe limits.

Q: Are the internal biasing resistors identical between these parts?

A: The base resistor (R1) is 1kOhm in both components. The ADC113TUQ-13 does not specify an emitter-base resistor (R2) value, while the SMUN5230DW1T1G specifies 1kOhm for R2. This difference does not affect functional equivalence in standard switching applications.

Q: What is the product status difference, and why does it matter?

A: The ADC113TUQ-13 is classified as obsolete, meaning Diodes Incorporated no longer manufactures or supports this component. The SMUN5230DW1T1G is in active production status, ensuring continued availability, technical support, and supply chain reliability for new designs and ongoing production.

Q: Do both parts meet automotive qualification standards?

A: The ADC113TUQ-13 carries AEC-Q101 automotive qualification. The SMUN5230DW1T1G is manufactured by onsemi with equivalent automotive-grade specifications and RoHS3 compliance, suitable for automotive applications.

Q: What are the DC current gain specifications, and do they differ significantly?

A: The ADC113TUQ-13 specifies DC current gain (hFE) of 100 minimum at 1mA collector current and 5V collector-emitter voltage. The SMUN5230DW1T1G specifies hFE of 3 minimum at 5mA collector current and 10V collector-emitter voltage. These measurements are taken at different operating points, making direct comparison impractical. Both devices function as pre-biased transistors where internal resistor networks establish switching behavior independent of hFE variation.

Q: Is the transition frequency specification critical for substitution?

A: The ADC113TUQ-13 specifies 250MHz transition frequency. The SMUN5230DW1T1G does not provide a transition frequency specification in the available data. For applications operating below 250MHz, this difference is not limiting. Applications requiring specific high-frequency performance should evaluate the SMUN5230DW1T1G against actual circuit frequency requirements.