AD648KRZ Equivalent & Substitute Parts

Part Overview

The AD648KRZ is a J-FET input operational amplifier manufactured by Analog Devices Inc., configured as a dual-channel (2 circuit) device in an 8-SOIC surface mount package. This component is classified as a linear amplifier and is currently in active product status with 1434 units in stock. The AD648KRZ is designed for applications requiring low input bias current and low input offset voltage characteristics typical of J-FET amplifier architectures. Substitute parts are identified when equivalent electrical performance parameters and mechanical compatibility are required due to component availability, supply chain considerations, or design optimization needs.

Substiute Parts

AD648KRZ
Analog Devices Inc.In Stock: 1464AD648KRZ Datasheet
AD648KRZ
Current Part
AD648JRZ
Analog Devices Inc.In Stock: 3609AD648JRZ Datasheet
AD648JRZ
Parametric Equivalent
LF253DT
STMicroelectronicsIn Stock: 72213LF253DT Datasheet
LF253DT
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LF353DT
STMicroelectronicsIn Stock: 6599LF353DT Datasheet
LF353DT
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LM3900D
Texas InstrumentsIn Stock: 3214LM3900D Datasheet
LM3900D
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LM833DT
STMicroelectronicsIn Stock: 166636LM833DT Datasheet
LM833DT
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OPA2130UA
Texas InstrumentsIn Stock: 5000319OPA2130UA Datasheet
OPA2130UA
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OPA2130UA/2K5
Texas InstrumentsIn Stock: 5681OPA2130UA/2K5 Datasheet
OPA2130UA/2K5
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OPA2277MDTEP
Texas InstrumentsIn Stock: 692067OPA2277MDTEP Datasheet
OPA2277MDTEP
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TL062CDT
STMicroelectronicsIn Stock: 147221TL062CDT Datasheet
TL062CDT
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TL062IDT
STMicroelectronicsIn Stock: 7146TL062IDT Datasheet
TL062IDT
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TL072ACDT
STMicroelectronicsIn Stock: 6581TL072ACDT Datasheet
TL072ACDT
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TL072CDT
STMicroelectronicsIn Stock: 203221TL072CDT Datasheet
TL072CDT
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TL082ACDT
STMicroelectronicsIn Stock: 2278TL082ACDT Datasheet
TL082ACDT
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TL082AIYDT
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TL082AIYDT
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TL082BCDT
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TL082BCDT
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TL082BIYDT
STMicroelectronicsIn Stock: 12042TL082BIYDT Datasheet
TL082BIYDT
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TL082CDT
STMicroelectronicsIn Stock: 27710TL082CDT Datasheet
TL082CDT
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TL082IDT
STMicroelectronicsIn Stock: 20366TL082IDT Datasheet
TL082IDT
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TL082IYDT
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TL082IYDT
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Key Parameters

Parameter Value Unit
Amplifier Type J-FET
Number of Circuits 2
Slew Rate 1.8 V/µs
Gain Bandwidth Product 1 MHz
-3dB Bandwidth 1 MHz
Current - Input Bias 3 pA
Voltage - Input Offset 300 µV
Current - Supply (x2 Channels) 340 µA
Current - Output / Channel 15 mA
Voltage - Supply Span (Min) 9 V
Voltage - Supply Span (Max) 36 V
Operating Temperature 0 to 70 °C
Package / Case 8-SOIC (0.154", 3.90mm Width)
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level 1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the AD648KRZ are categorized based on strict alignment with the following critical parameters: amplifier type (J-FET), number of circuits (2), package type (8-SOIC), supply voltage range compatibility (9V to 36V minimum overlap), and operating temperature range (0°C to 70°C minimum overlap). Parts are grouped into two categories:

Parametric Equivalents maintain identical or near-identical electrical specifications across all key performance metrics including slew rate, gain bandwidth product, input bias current, input offset voltage, and output current capability.

Similar Alternatives share the same package and circuit count but exhibit variations in one or more electrical parameters such as slew rate, bandwidth, input bias current, or supply current. These alternatives are suitable when the application can tolerate the specified parameter deviations.

Parameter Comparison

Part Number Manufacturer Amplifier Type Number of Circuits Slew Rate (V/µs) GBW (MHz) Input Bias (pA) Input Offset (µV) Supply Current (µA) Output Current (mA) Supply Min (V) Supply Max (V) Temp Range (°C) Package Status
AD648KRZ Analog Devices J-FET 2 1.8 1 3 300 340 15 9 36 0 to 70 8-SOIC Active
AD648JRZ Analog Devices J-FET 2 1.8 1 5 750 340 15 9 36 0 to 70 8-SOIC Active
LF253DT STMicroelectronics J-FET 2 16 4 20 3000 1400 40 6 36 -40 to 105 8-SOIC Active
LF353DT STMicroelectronics J-FET 2 16 4 20 3000 1400 40 6 36 0 to 70 8-SOIC Active
TL062CDT STMicroelectronics J-FET 2 3.5 1 30 3000 200 20 6 36 0 to 70 8-SOIC Active
TL062IDT STMicroelectronics J-FET 2 3.5 1 30 3000 200 20 6 36 -40 to 105 8-SOIC Active
OPA2130UA Texas Instruments J-FET 2 2 1 5 200 530 18 4.5 36 -40 to 85 8-SOIC Active
OPA2130UA/2K5 Texas Instruments J-FET 2 2 1 5 200 530 18 4.5 36 -40 to 85 8-SOIC Active

Engineering Selection Recommendations

AD648JRZ is the primary parametric equivalent from Analog Devices Inc. This part maintains identical slew rate (1.8 V/µs), gain bandwidth product (1 MHz), supply voltage range (9V to 36V), and operating temperature range (0°C to 70°C). The AD648JRZ exhibits slightly higher input bias current (5 pA versus 3 pA) and input offset voltage (750 µV versus 300 µV), representing acceptable tolerance variations within the J-FET amplifier class. Both parts are ROHS3 compliant with MSL 1 rating and active product status. The AD648JRZ offers higher inventory availability (3521 units) compared to the AD648KRZ.

OPA2130UA and OPA2130UA/2K5 from Texas Instruments provide J-FET amplifier performance with 1 MHz gain bandwidth product and 2 V/µs slew rate. These parts support extended operating temperature ranges (-40°C to 85°C) and lower minimum supply voltage (4.5V). Input offset voltage is superior at 200 µV. Both variants are ROHS3 compliant and active. The OPA2130UA/2K5 is supplied on cut tape with 5633 units in stock.

TL062CDT and TL062IDT from STMicroelectronics are J-FET amplifiers with 1 MHz gain bandwidth product matching the AD648KRZ. The TL062CDT operates within the 0°C to 70°C range identical to the main part, while TL062IDT extends to -40°C to 105°C. Both exhibit 3.5 V/µs slew rate and 200 µA supply current per channel. Input offset voltage is 3 mV, representing a trade-off for lower supply current consumption. Both are ROHS3 compliant with MSL 1 rating and active status.

LF253DT and LF353DT from STMicroelectronics offer enhanced performance with 16 V/µs slew rate and 4 MHz gain bandwidth product. LF353DT matches the 0°C to 70°C operating temperature of the AD648KRZ, while LF253DT extends to -40°C to 105°C. These parts support higher output current (40 mA per channel) and accept lower minimum supply voltage (6V). Both are ROHS3 compliant and active. These alternatives are suitable for applications requiring higher bandwidth and slew rate performance.

All substitute parts listed maintain 8-SOIC surface mount packaging, ROHS3 compliance, and MSL 1 or MSL 3 moisture sensitivity ratings. Selection should be based on specific application requirements for slew rate, bandwidth, input bias current, and operating temperature range.

Frequently Asked Questions (FAQ)

Q: Can AD648JRZ be used as a direct replacement for AD648KRZ?

A: Yes. The AD648JRZ is a parametric equivalent with identical package (8-SOIC), circuit count (2), slew rate (1.8 V/µs), gain bandwidth product (1 MHz), and supply voltage range (9V to 36V). Input bias current and input offset voltage show minor variations within acceptable J-FET amplifier tolerances. Both parts are ROHS3 compliant with MSL 1 rating and active product status.

Q: What are the key differences between AD648KRZ and LF353DT?

A: LF353DT offers significantly higher slew rate (16 V/µs versus 1.8 V/µs) and gain bandwidth product (4 MHz versus 1 MHz). LF353DT supports lower minimum supply voltage (6V versus 9V) and higher output current per channel (40 mA versus 15 mA). Input offset voltage is higher at 3 mV. Both maintain 8-SOIC packaging and 0°C to 70°C operating temperature range. LF353DT is suitable for applications requiring enhanced bandwidth and slew rate performance.

Q: Are all substitute parts compatible with the same PCB footprint?

A: Yes. All listed substitute parts use the 8-SOIC (0.154", 3.90mm width) surface mount package, ensuring mechanical and footprint compatibility with the AD648KRZ. No PCB layout modifications are required for package substitution.

Q: What is the difference between OPA2130UA and OPA2130UA/2K5?

A: Both variants are electrically identical J-FET amplifiers with 1 MHz gain bandwidth product and 2 V/µs slew rate. The primary difference is packaging format: OPA2130UA is supplied in tube packaging, while OPA2130UA/2K5 is supplied on cut tape with digi-reel. Electrical specifications, ROHS3 compliance, and operating temperature range (-40°C to 85°C) are identical.

Q: Can TL062CDT replace AD648KRZ in all applications?

A: TL062CDT shares the same 8-SOIC package, J-FET amplifier type, 2-circuit configuration, and 1 MHz gain bandwidth product. Operating temperature range (0°C to 70°C) is identical. However, slew rate is higher (3.5 V/µs versus 1.8 V/µs) and supply current is lower (200 µA versus 340 µA per channel). Input offset voltage is higher at 3 mV. Substitution is valid when the application can tolerate these parameter variations.

Q: What is the significance of MSL rating for these parts?

A: Moisture Sensitivity Level (MSL) indicates the component's sensitivity to moisture absorption during storage and handling. AD648KRZ, AD648JRZ, and TL062 series have MSL 1 (unlimited shelf life without special storage). OPA2130 variants have MSL 3 (168-hour floor life after bag opening), requiring controlled storage conditions. MSL rating affects component handling procedures and storage requirements.

Q: Which substitute offers the lowest power consumption?

A: TL062CDT and TL062IDT offer the lowest supply current at 200 µA per channel (400 µA total for 2 channels), compared to 340 µA for AD648KRZ. This represents a 41% reduction in supply current, making TL062 variants suitable for battery-powered or low-power applications where the 1 MHz bandwidth and 3.5 V/µs slew rate are acceptable.

Q: Are all parts ROHS3 compliant?

A: Yes. All listed parts including AD648KRZ, AD648JRZ, LF253DT, LF353DT, TL062CDT, TL062IDT, OPA2130UA, and OPA2130UA/2K5 are ROHS3 compliant. All parts are also REACH unaffected and classified under ECCN EAR99.

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