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IRFR3303 N-Channel 30V 33A MOSFET Equivalent & Substitute Parts
Part Overview
The IRFR3303 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 33A continuous drain current at 25°C. This device is packaged in TO-252-3 (DPAK) surface mount configuration and is classified as obsolete. Due to its obsolete product status, equivalent and substitute parts are necessary for ongoing design support, production continuity, and component sourcing. Substitute parts must maintain compatibility with the original electrical specifications and mechanical package requirements while offering active product status and improved compliance certifications.
Substiute Parts
Key Parameters
| Parameter | Value | Unit | Condition |
|---|---|---|---|
| Drain-to-Source Voltage (Vdss) | 30 | V | Maximum rating |
| Continuous Drain Current (Id) | 33 | A | @ 25°C (Tc) |
| On-State Resistance (Rds On) | 31 | mOhm | @ 18A, 10V Vgs |
| Gate Threshold Voltage (Vgs(th)) | 4 | V | @ 250µA |
| Power Dissipation | 57 | W | @ Tc (case temperature) |
| Operating Temperature Range | -55 to 150 | °C | Junction temperature (TJ) |
| Package Type | TO-252-3 (DPAK) | — | Surface mount |
| Gate Charge (Qg) | 29 | nC | @ 10V Vgs |
| Input Capacitance (Ciss) | 750 | pF | @ 25V Vds |
Substitute Part Grouping Explanation
Substitution eligibility for the IRFR3303 is determined by the following critical parameters:
Mandatory Compatibility Criteria:
- Drain-to-Source Voltage (Vdss): Must equal or exceed 30V
- Package Type: Must be TO-252-3 (DPAK) surface mount configuration
- FET Type: Must be N-Channel MOSFET
- Mounting Type: Must be surface mount
Performance Compatibility Criteria:
- Continuous Drain Current (Id): Substitute must support minimum 30A at 25°C to maintain circuit current capacity
- On-State Resistance (Rds On): Lower or equal values improve thermal performance; higher values are acceptable if thermal design accommodates increased power dissipation
- Operating Temperature Range: Must support -55°C minimum; upper limit of 150°C or higher is acceptable
- Gate Threshold Voltage (Vgs(th)): Must be compatible with existing gate drive circuitry; values between 2V and 4V are functionally equivalent for standard applications
Compliance Criteria:
- RoHS Status: Active product status with RoHS3 compliance is preferred for new designs
- Product Status: Active products are prioritized over obsolete classifications
The substitute parts listed below satisfy all mandatory criteria and maintain functional equivalence within the specified electrical and mechanical parameters.
Parameter Comparison
| Parameter | IRFR3303 (Main Part) | IPD30N03S2L20ATMA1 | STD18NF03L | Unit |
|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | STMicroelectronics | — |
| Product Status | Obsolete | Active | Active | — |
| FET Type | N-Channel | N-Channel | N-Channel | — |
| Vdss (Maximum) | 30 | 30 | 30 | V |
| Id @ 25°C | 33 | 30 | 17 | A |
| Rds On (Max) | 31 | 20 | 50 | mOhm |
| Rds On Test Condition | @ 18A, 10V | @ 18A, 10V | @ 8.5A, 10V | — |
| Vgs(th) (Maximum) | 4 | 2 | 2.2 | V |
| Gate Charge (Qg) | 29 | 19 | 6.5 | nC |
| Ciss (Maximum) | 750 | 530 | 320 | pF |
| Power Dissipation (Max) | 57 | 60 | 30 | W |
| Operating Temperature Range | -55 to 150 | -55 to 175 | -55 to 175 | °C |
| Package | TO-252-3 (DPAK) | TO-252-3 (DPAK) | TO-252-3 (DPAK) | — |
| RoHS Status | Non-compliant | ROHS3 Compliant | ROHS3 Compliant | — |
| Series | HEXFET® | OptiMOS™ | STripFET™ II | — |
Engineering Selection Recommendations
IPD30N03S2L20ATMA1 (Infineon Technologies OptiMOS™)
This substitute is the primary equivalent for the IRFR3303. It maintains identical Vdss (30V) and near-equivalent continuous drain current (30A versus 33A). The IPD30N03S2L20ATMA1 offers superior on-state resistance (20 mOhm versus 31 mOhm), resulting in lower power dissipation and improved thermal efficiency. The device is manufactured by the same supplier (Infineon Technologies) and is classified as active product status with ROHS3 compliance. Operating temperature range extends to 175°C, exceeding the original part's 150°C maximum. Gate threshold voltage is lower (2V versus 4V), requiring verification of gate drive circuit compatibility. This part is suitable for direct replacement in applications where the 3A reduction in continuous drain current does not exceed circuit requirements.
STD18NF03L (STMicroelectronics STripFET™ II)
This substitute is a secondary equivalent suitable for applications with reduced current requirements. The STD18NF03L maintains identical Vdss (30V) but provides lower continuous drain current (17A versus 33A). On-state resistance is higher (50 mOhm versus 31 mOhm), resulting in increased power dissipation. The device is active product status with ROHS3 compliance and extended operating temperature range (-55°C to 175°C). Gate threshold voltage (2.2V) is lower than the original part, requiring gate drive circuit verification. This part is applicable only in circuits where continuous drain current does not exceed 17A and thermal design accommodates the higher Rds On value.
Selection Basis:
- Product Status: Both substitutes are active products, ensuring long-term availability and supply chain continuity compared to the obsolete IRFR3303.
- Compliance: Both substitutes meet ROHS3 compliance, supporting regulatory requirements for new designs and manufacturing.
- Package Compatibility: All three devices use identical TO-252-3 (DPAK) surface mount packaging, enabling direct PCB footprint compatibility.
- Electrical Compatibility: IPD30N03S2L20ATMA1 is the preferred substitute due to current rating proximity (30A versus 33A). STD18NF03L is suitable only for lower-current applications.
Frequently Asked Questions (FAQ)
Q1: Can the IPD30N03S2L20ATMA1 directly replace the IRFR3303 without circuit modifications?
The IPD30N03S2L20ATMA1 is mechanically and electrically compatible with the IRFR3303 in TO-252-3 (DPAK) package. However, the gate threshold voltage differs (2V versus 4V). Verify that existing gate drive circuitry can reliably switch the lower threshold voltage. The 3A reduction in continuous drain current (30A versus 33A) must be evaluated against circuit current requirements. If circuit current does not exceed 30A at 25°C, no modifications are required.
Q2: Why is the STD18NF03L listed as a substitute if it has lower current rating?
The STD18NF03L is listed as a substitute for applications where continuous drain current requirements do not exceed 17A. It maintains the same Vdss (30V) and package type (TO-252-3 DPAK), satisfying the mandatory compatibility criteria. However, it is not suitable for circuits requiring the full 33A current capacity of the original IRFR3303.
Q3: What is the impact of lower gate threshold voltage in substitute parts?
The IPD30N03S2L20ATMA1 and STD18NF03L have gate threshold voltages of 2V and 2.2V respectively, compared to 4V for the IRFR3303. Lower threshold voltage means the device turns on at lower gate-source voltage. Verify that gate drive circuitry can reliably operate at these lower thresholds. In most standard applications with adequate gate drive voltage (10V or higher), this difference does not affect functionality.
Q4: Are the substitute parts pin-compatible with the IRFR3303?
Yes. All three devices use the TO-252-3 (DPAK) package with identical pin configuration: Gate, Drain, and Source (with Source connected to the tab). PCB footprints are directly compatible without modification.
Q5: What is the significance of RoHS3 compliance in the substitute parts?
Both substitute parts (IPD30N03S2L20ATMA1 and STD18NF03L) are ROHS3 compliant, whereas the IRFR3303 is RoHS non-compliant. ROHS3 compliance ensures the devices meet current environmental and regulatory standards for hazardous substance restrictions. This is essential for new product designs and manufacturing in regulated markets.
Q6: How do the power dissipation ratings compare?
The IRFR3303 has 57W maximum power dissipation. The IPD30N03S2L20ATMA1 offers 60W (slightly higher), while the STD18NF03L is rated at 30W. Higher power dissipation in the IPD30N03S2L20ATMA1 is offset by lower on-state resistance (20 mOhm versus 31 mOhm), resulting in improved thermal efficiency in high-current applications. The STD18NF03L's lower power rating reflects its reduced current capacity.
Q7: Can I use the IPD30N03S2L20ATMA1 in a circuit designed for 33A continuous current?
The IPD30N03S2L20ATMA1 is rated for 30A continuous drain current at 25°C, which is 3A less than the IRFR3303. If your circuit requires sustained operation at 33A, the IPD30N03S2L20ATMA1 may exceed its continuous current rating. Evaluate actual circuit current requirements and thermal conditions. If sustained current is below 30A, the substitute is suitable.
Q8: What is the difference between the IRFR3303 and IPD30N03S2L20ATMA1 in terms of gate charge?
The IRFR3303 has gate charge of 29 nC at 10V Vgs, while the IPD30N03S2L20ATMA1 has 19 nC. Lower gate charge in the substitute results in faster switching speed and reduced gate drive power requirements. This is a performance advantage in high-frequency switching applications.
Q9: Are there any thermal considerations when substituting these parts?
The IPD30N03S2L20ATMA1 has lower on-state resistance (20 mOhm versus 31 mOhm), generating less heat at equivalent current levels. This improves thermal performance. The STD18NF03L has higher on-state resistance (50 mOhm), generating more heat; thermal design must accommodate this increase. Both substitutes support extended operating temperature range (-55°C to 175°C) compared to the IRFR3303 (-55°C to 150°C).
Q10: What packaging options are available for these substitute parts?
All three devices are available in TO-252-3 (DPAK) surface mount package. The IPD30N03S2L20ATMA1 is supplied in Tape & Reel (TR) packaging. The STD18NF03L is available in Cut Tape (CT) and Digi-Reel® packaging. Packaging format does not affect electrical or mechanical compatibility; it relates only to order quantity and handling.
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