Equivalent & Substitute Parts for Infineon 94-4582 MOSFET P-Channel 55V 31A D2PAK

Part Overview

The Infineon 94-4582 is a P-Channel MOSFET rated for 55V drain-to-source voltage with 31A continuous drain current in a D2PAK surface mount package. This component is classified as obsolete, making substitute parts necessary for new designs and ongoing production requirements. The part operates across a wide temperature range from -55°C to 175°C and is suitable for switching applications requiring moderate voltage and current ratings in compact surface mount form factors.

Substiute Parts

94-4582

Infineon TechnologiesIn Stock: 120794-4582 Datasheet

Current PartRFQ

FQB34P10TM

onsemiIn Stock: 26333FQB34P10TM Datasheet

MFR RecommendedRFQ

IXTA52P10P

IXYSIn Stock: 5154IXTA52P10P Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution for the Infineon 94-4582 is determined by the following critical parameters:

Mandatory Compatibility Criteria:

• FET Type: P-Channel configuration
• Package: D2PAK / TO-263-3 surface mount form factor
• Drain-to-Source Voltage (Vdss): Minimum 55V rating (higher ratings acceptable)
• Continuous Drain Current (Id): Minimum 31A at 25°C (higher ratings acceptable)
• Rds On: Maximum 60 mOhm @ specified gate voltage (lower values acceptable)
• Gate Threshold Voltage: Maximum 4V @ 250µA (lower values acceptable)
• Operating Temperature: Minimum -55°C to 175°C range

Substitute Parts Identified:

1. onsemi FQB34P10TM — Active product with enhanced voltage rating (100V) and higher current capability (33.5A), maintaining identical Rds On specification and compatible package.

2. IXYS IXTA52P10P — Active product with enhanced voltage rating (100V) and significantly higher current capability (52A), improved Rds On performance (50 mOhm), and superior power dissipation (300W Tc).

Both substitutes meet or exceed all mandatory parameters of the obsolete Infineon part while offering improved electrical performance and active product status.

Parameter Comparison

Engineering Selection Recommendations

onsemi FQB34P10TM is suitable for direct replacement in applications where the original 55V rating is adequate and current requirements do not exceed 33.5A. This substitute maintains electrical performance parity with the Infineon 94-4582 while providing higher voltage headroom (100V) and active product status. The part is ROHS3 compliant, addressing regulatory requirements for new designs. Gate charge is higher (110 nC vs. 63 nC), which may affect switching speed in gate-drive-limited circuits.

IXYS IXTA52P10P is recommended for applications requiring enhanced current handling (52A continuous) and superior thermal performance (300W Tc dissipation). This part offers the lowest on-resistance (50 mOhm) among the three options, reducing conduction losses. The 100V voltage rating provides additional design margin. ROHS3 compliance is confirmed. Operating temperature maximum is 150°C, which is 25°C lower than the original part; this must be verified against application requirements. Gate charge matches the original specification (60 nC), supporting equivalent switching characteristics.

Both substitutes are available in active production with confirmed inventory levels, ensuring supply chain continuity.

Frequently Asked Questions (FAQ)

Q: Can the onsemi FQB34P10TM directly replace the Infineon 94-4582 in existing PCB layouts?

A: Yes. Both parts use the D2PAK / TO-263-3 package with identical pin configuration and lead spacing. No PCB modification is required. Electrical parameters are compatible for applications operating at or below 55V.

Q: What is the primary advantage of the IXYS IXTA52P10P over the onsemi substitute?

A: The IXYS part provides significantly higher continuous drain current (52A vs. 33.5A) and superior power dissipation capability (300W vs. 155W). On-resistance is also lower (50 mOhm vs. 60 mOhm), reducing conduction losses. These characteristics make it suitable for high-current switching applications.

Q: Are there thermal management differences between the three parts?

A: Yes. The IXYS IXTA52P10P has the highest thermal capacity (300W Tc), followed by the onsemi FQB34P10TM (155W Tc) and the original Infineon part (110W Tc). All three use the same D2PAK package, so thermal performance improvement depends on PCB thermal design and heatsinking implementation.

Q: Does the higher gate charge of the onsemi FQB34P10TM affect circuit performance?

A: Gate charge (110 nC vs. 63 nC) determines the time required to switch the FET on or off. Higher gate charge requires more gate current or longer switching time. In gate-drive-limited circuits, this may reduce switching frequency or increase switching losses. The IXYS part matches the original gate charge specification (60 nC).

Q: Are both substitutes RoHS compliant?

A: Yes. Both the onsemi FQB34P10TM and IXYS IXTA52P10P are ROHS3 compliant. The original Infineon 94-4582 is RoHS non-compliant, making these substitutes necessary for new designs subject to RoHS regulations.

Q: What is the maximum operating temperature difference between the substitutes?

A: The onsemi FQB34P10TM operates to 175°C (matching the original), while the IXYS IXTA52P10P is rated to 150°C maximum. Applications requiring operation above 150°C must use the onsemi part or the original Infineon component.

Q: Can I use the IXYS IXTA52P10P in a circuit designed for 31A continuous current?

A: Yes. The IXYS part is rated for 52A continuous current, so it operates well within its specifications at 31A. This provides design margin and reduces thermal stress on the component.

Q: Are there differences in input capacitance between the parts?

A: Yes. Input capacitance (Ciss) is higher in both substitutes (2910 pF for onsemi, 2845 pF for IXYS) compared to the original (1200 pF). Higher capacitance increases gate charge time and may require higher gate drive current. This should be verified in high-frequency switching applications.