Equivalent & Substitute Parts for Infineon IRF7342 MOSFET 2P-CH 55V 3.4A 8SO

Part Overview

The Infineon 94-3449 is a dual P-channel MOSFET array rated for 55V drain-to-source voltage with 3.4A continuous drain current. This component is classified as obsolete, which necessitates identification of equivalent and substitute parts for ongoing design support and procurement. The part operates across an industrial temperature range of -55°C to 150°C and is housed in an 8-SOIC surface mount package. Substitute parts must maintain electrical compatibility within the specified parameter tolerances while meeting current manufacturing and compliance standards.

Key Parameters

Parameter	Value	Unit	Condition
Drain to Source Voltage (Vdss)	55	V	Maximum rating
Continuous Drain Current (Id)	3.4	A	@ 25°C
On-State Resistance (Rds On)	105	mOhm	@ 3.4A, 10V Vgs
Gate Threshold Voltage (Vgs(th))	1	V	@ 250µA
Gate Charge (Qg)	38	nC	@ 10V
Input Capacitance (Ciss)	690	pF	@ 25V
Maximum Power Dissipation	2	W	Thermal limit
Operating Temperature Range	-55 to 150	°C	Junction temperature
Package Type	8-SOIC	-	0.154" width, 3.90mm
Configuration	2 P-Channel	-	Dual MOSFET array

Substitute Part Grouping Explanation

Substitute parts for the Infineon 94-3449 are identified based on strict electrical and mechanical compatibility criteria. The substitution logic is governed by the following parameters:

Primary Compatibility Criteria:

Configuration: 2 P-Channel dual MOSFET array
Package: 8-SOIC surface mount (0.154" width, 3.90mm)
Drain-to-Source Voltage (Vdss): Minimum 55V
Continuous Drain Current (Id): Minimum 3.4A @ 25°C
On-State Resistance (Rds On): Maximum 105mOhm @ specified conditions
Operating Temperature Range: -55°C to 150°C minimum
Mounting Type: Surface mount

Substitution Categories:

Direct Equivalent (Identical Electrical Performance): The IRF7342TRPBF maintains all electrical specifications identical to the main part while offering active product status and improved compliance.

Manufacturer-Recommended Substitute (Electrical Compatibility with Parameter Variance): The DMP6110SSD-13 provides functional substitution with allowable parameter variations. While Vdss is rated 5V higher (60V vs. 55V) and Id is marginally lower (3.3A vs. 3.4A), the on-state resistance specification remains equivalent at 105mOhm. This part is suitable for applications where the higher voltage rating provides additional design margin.

Parameter Comparison

Parameter	Infineon 94-3449 (Main)	IRF7342TRPBF (Direct Equivalent)	DMP6110SSD-13 (Recommended Substitute)	Unit
Manufacturer	Infineon Technologies	Infineon Technologies	Diodes Incorporated	-
Configuration	2 P-Channel	2 P-Channel	2 P-Channel	-
Vdss (Max)	55	55	60	V
Id @ 25°C	3.4	3.4	3.3	A
Rds On (Max)	105 @ 3.4A, 10V	105 @ 3.4A, 10V	105 @ 4.5A, 10V	mOhm
Vgs(th) (Max)	1 @ 250µA	1 @ 250µA	3 @ 250µA	V
Gate Charge (Qg)	38 @ 10V	38 @ 10V	17.2 @ 10V	nC
Input Capacitance (Ciss)	690 @ 25V	690 @ 25V	969 @ 30V	pF
Power Dissipation (Max)	2	2	1.2	W
Operating Temperature	-55 to 150	-55 to 150	-55 to 150	°C
Package	8-SOIC	8-SOIC	8-SOIC	-
Product Status	Obsolete	Active	Active	-
RoHS Compliance	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	-

Engineering Selection Recommendations

For Direct Replacement (Preferred): The IRF7342TRPBF is the primary substitute for the obsolete Infineon 94-3449. This part is manufactured by Infineon Technologies and maintains identical electrical specifications across all critical parameters. The IRF7342TRPBF carries active product status, ensuring long-term availability and supply chain stability. The part is ROHS3 compliant, meeting current environmental and regulatory requirements. With 41,300 units in stock, procurement availability is established. This part requires no circuit redesign and provides direct functional equivalence.

For Applications Requiring Higher Voltage Margin: The DMP6110SSD-13 from Diodes Incorporated is suitable for designs where additional voltage headroom is beneficial. The 60V Vdss rating provides 5V additional margin over the original 55V specification. The on-state resistance remains equivalent at 105mOhm, maintaining switching performance. However, the continuous drain current is specified at 3.3A versus 3.4A, requiring verification that circuit current demands do not exceed 3.3A. The gate threshold voltage is higher (3V vs. 1V), which may affect gate drive circuit timing. The lower gate charge (17.2nC vs. 38nC) and reduced power dissipation rating (1.2W vs. 2W) indicate different thermal characteristics. This part is ROHS3 compliant with 87,600 units in stock.

Compliance Considerations: Both substitute parts are ROHS3 compliant, addressing the non-compliant status of the original part. Both maintain REACH unaffected status and EAR99 export classification. Moisture sensitivity level remains at MSL 1 (unlimited) for all parts.

Frequently Asked Questions (FAQ)

Q: Can the IRF7342TRPBF be used as a direct drop-in replacement for the Infineon 94-3449?

A: Yes. The IRF7342TRPBF maintains identical electrical specifications including Vdss (55V), Id (3.4A), Rds On (105mOhm), gate charge (38nC), and input capacitance (690pF). The package is identical (8-SOIC). No circuit modifications are required.

Q: What are the key differences between the IRF7342TRPBF and DMP6110SSD-13?

A: The IRF7342TRPBF is manufactured by Infineon and maintains all original specifications. The DMP6110SSD-13 is manufactured by Diodes Incorporated with the following differences: Vdss is 60V (vs. 55V), Id is 3.3A (vs. 3.4A), Vgs(th) is 3V (vs. 1V), gate charge is 17.2nC (vs. 38nC), and power dissipation is 1.2W (vs. 2W). Both parts are electrically compatible for most applications but have different thermal and gate drive characteristics.

Q: Is the DMP6110SSD-13 suitable for my application if it requires 3.4A continuous current?

A: The DMP6110SSD-13 is rated for 3.3A continuous drain current. If your application requires 3.4A, the IRF7342TRPBF is the appropriate choice. Operating the DMP6110SSD-13 at or above its rated current limit may result in thermal stress and reduced component lifetime.

Q: Are both substitute parts available in the same packaging options?

A: Both the IRF7342TRPBF and DMP6110SSD-13 are housed in 8-SOIC packages with 0.154" width and 3.90mm dimensions. Both are available in Cut Tape (CT) and Digi-Reel packaging formats, suitable for automated assembly processes.

Q: What is the impact of the higher gate threshold voltage in the DMP6110SSD-13?

A: The DMP6110SSD-13 has a gate threshold voltage of 3V compared to 1V in the original part. This means a higher gate voltage is required to initiate conduction. Gate drive circuits must be verified to supply sufficient voltage to achieve the required on-state resistance. Logic-level gate drive circuits designed for 1V threshold may require adjustment.

Q: Do both substitute parts meet current compliance standards?

A: Yes. Both the IRF7342TRPBF and DMP6110SSD-13 are ROHS3 compliant. The original Infineon 94-3449 is RoHS non-compliant. Both substitutes maintain REACH unaffected status and EAR99 export classification.

Q: Which substitute part should I select for a new design?

A: For new designs, the IRF7342TRPBF is recommended. It provides identical electrical performance to the original part, ensuring compatibility with existing circuit designs and gate drive specifications. Active product status and established supply chain availability support long-term production requirements.

Q: Can I use the DMP6110SSD-13 in a design originally specified for the Infineon 94-3449?

A: The DMP6110SSD-13 can be used if circuit analysis confirms that the 3.3A current rating is sufficient and gate drive circuitry can accommodate the 3V threshold voltage. The higher Vdss (60V) provides additional margin. However, the IRF7342TRPBF is preferred for direct substitution without circuit modification.

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