MOSFET N-Channel 55V 2A SOT-223 Equivalent & Substitute Parts (94-3316)

Part Overview

The Infineon 94-3316 is an N-Channel MOSFET rated for 55V drain-to-source voltage with 2A continuous drain current in a surface mount SOT-223 package. This device belongs to the HEXFET® series and is classified as Active product status. Equivalent and substitute parts are identified based on matching or exceeding electrical performance within the same package family, enabling direct replacement in applications where the original part becomes unavailable or where design flexibility requires alternative sourcing from qualified manufacturers.

Substiute Parts

94-3316
Infineon TechnologiesIn Stock: 87894-3316 Datasheet
94-3316
Current Part
IRLL014NTRPBF
Infineon TechnologiesIn Stock: 50408IRLL014NTRPBF Datasheet
IRLL014NTRPBF
MFR Recommended
NCV8440ASTT1G
onsemiIn Stock: 16165NCV8440ASTT1G Datasheet
NCV8440ASTT1G
MFR Recommended
NTF3055-100T1G
onsemiIn Stock: 30765NTF3055-100T1G Datasheet
NTF3055-100T1G
MFR Recommended
NTF3055L108T1G
onsemiIn Stock: 32299NTF3055L108T1G Datasheet
NTF3055L108T1G
MFR Recommended
STN3NF06L
STMicroelectronicsIn Stock: 72493STN3NF06L Datasheet
STN3NF06L
MFR Recommended
ZXMN6A11GTA
Diodes IncorporatedIn Stock: 6147ZXMN6A11GTA Datasheet
ZXMN6A11GTA
MFR Recommended

Key Parameters

Parameter Value Unit Condition
Drain-to-Source Voltage (Vdss) 55 V Maximum rating
Continuous Drain Current (Id) 2 A @ 25°C (Ta)
On-State Resistance (Rds On) 140 mOhm @ 2A, 10V Vgs
Gate Threshold Voltage (Vgs(th)) 2 V @ 250µA Id
Gate Charge (Qg) 14 nC @ 10V Vgs
Input Capacitance (Ciss) 230 pF @ 25V Vds
Package Type SOT-223 - Surface Mount
FET Type N-Channel - Metal Oxide

Substitute Part Grouping Explanation

Substitution logic for the 94-3316 is based on the following criteria:

Primary Substitution Criteria:

  • FET Type: N-Channel MOSFET (Metal Oxide technology)
  • Package: SOT-223 (TO-261-4, TO-261AA) surface mount
  • Drain-to-Source Voltage (Vdss): Minimum 55V (equal or higher rating acceptable)
  • Continuous Drain Current (Id): Minimum 2A @ 25°C (equal or higher rating acceptable)
  • On-State Resistance (Rds On): Maximum 140mOhm or lower (lower resistance preferred for thermal performance)
  • Gate Threshold Voltage (Vgs(th)): Maximum 2V (lower threshold preferred for gate drive compatibility)
  • Mounting Type: Surface Mount

Secondary Compatibility Factors:

  • Product Status: Active (ensures ongoing availability and support)
  • RoHS Compliance: ROHS3 Compliant preferred (94-3316 is RoHS non-compliant; compliant alternatives available)
  • Moisture Sensitivity Level: MSL 1 (Unlimited) for storage flexibility
  • Operating Temperature Range: -55°C to 150°C minimum

Substitute parts listed below meet or exceed the primary electrical specifications while maintaining package compatibility. Parts with higher voltage ratings, higher current ratings, or lower on-state resistance provide enhanced performance margins.

Parameter Comparison

Part Number Manufacturer Vdss (V) Id @ 25°C (A) Rds On (mOhm) Vgs(th) (V) Qg (nC) Ciss (pF) Package RoHS Status
94-3316 Infineon 55 2 140 @ 2A, 10V 2 @ 250µA 14 @ 10V 230 @ 25V SOT-223 Non-compliant
IRLL014NTRPBF Infineon 55 2 140 @ 2A, 10V 2 @ 250µA 14 @ 10V 230 @ 25V SOT-223 ROHS3 Compliant
NCV8440ASTT1G onsemi 59 2.6 110 @ 2.6A, 10V 1.9 @ 100µA 4.5 @ 4.5V 155 @ 35V SOT-223 ROHS3 Compliant
NTF3055-100T1G onsemi 60 3 110 @ 1.5A, 10V 4 @ 250µA 22 @ 10V 455 @ 25V SOT-223 ROHS3 Compliant
NTF3055L108T1G onsemi 60 3 120 @ 1.5A, 5V 2 @ 250µA 15 @ 5V 440 @ 25V SOT-223 ROHS3 Compliant
STN3NF06L STMicroelectronics 60 4 100 @ 1.5A, 10V 2.8 @ 250µA 9 @ 5V 340 @ 25V SOT-223 ROHS3 Compliant
ZXMN6A11GTA Diodes Incorporated 60 3.1 120 @ 2.5A, 10V 3 @ 250µA 5.7 @ 10V 330 @ 40V SOT-223 ROHS3 Compliant

Engineering Selection Recommendations

Direct Equivalent (Recommended for Drop-In Replacement):

IRLL014NTRPBF is the primary equivalent for the 94-3316. This part is manufactured by Infineon (same OEM as the original), shares identical electrical specifications (55V, 2A, 140mOhm Rds On), and is ROHS3 Compliant. The IRLL014NTRPBF is supplied in Cut Tape and Digi-Reel® packaging with 50,368 units in stock, ensuring supply continuity. This part is suitable for direct substitution without circuit redesign.

Higher-Performance Alternatives (Electrical Upgrade):

NCV8440ASTT1G (onsemi) provides improved performance with 59V rating, 2.6A current capability, and reduced Rds On of 110mOhm. This part features lower gate charge (4.5nC) and input capacitance (155pF), resulting in faster switching characteristics and reduced gate drive requirements. ROHS3 Compliant with 16,092 units in stock.

NTF3055L108T1G (onsemi) offers 60V rating with 3A capability and optimized for 5V gate drive operation. Gate threshold voltage matches the original at 2V, and gate charge is 15nC. This part is suitable for applications requiring higher current margins or lower gate drive voltage. ROHS3 Compliant with 32,200 units in stock.

STN3NF06L (STMicroelectronics) delivers the highest performance upgrade with 60V rating, 4A continuous current, and 100mOhm Rds On. This STripFET™ II series device features the lowest gate charge (9nC @ 5V) and highest power dissipation rating (3.3W). Suitable for high-frequency switching applications. ROHS3 Compliant with 72,446 units in stock.

Compliance Consideration:

The original 94-3316 is RoHS non-compliant. All listed substitute parts are ROHS3 Compliant, meeting current environmental regulations. Selection of a compliant alternative is recommended for new designs or applications subject to RoHS requirements.

Frequently Asked Questions (FAQ)

Q1: Can IRLL014NTRPBF replace 94-3316 without any circuit modifications?

A: Yes. IRLL014NTRPBF is electrically and mechanically identical to 94-3316, with matching Vdss (55V), Id (2A), Rds On (140mOhm), and package (SOT-223). The only difference is RoHS compliance status. No circuit modifications are required.

Q2: What is the advantage of using NCV8440ASTT1G over the direct equivalent?

A: NCV8440ASTT1G provides improved electrical performance: higher voltage rating (59V vs. 55V), higher current capability (2.6A vs. 2A), lower on-state resistance (110mOhm vs. 140mOhm), and significantly lower gate charge (4.5nC vs. 14nC). These improvements reduce power dissipation and switching losses, beneficial for high-frequency applications. The trade-off is lower gate threshold voltage (1.9V vs. 2V), requiring verification of gate drive compatibility.

Q3: Are all substitute parts in the same SOT-223 package?

A: Yes. All listed substitute parts use SOT-223 package (TO-261-4, TO-261AA designation), ensuring mechanical and pin compatibility. PCB layout modifications are not required for package substitution.

Q4: Which substitute part has the lowest on-state resistance?

A: STN3NF06L has the lowest Rds On at 100mOhm (measured @ 1.5A, 10V Vgs). This results in the lowest conduction losses and heat generation during operation. However, Rds On is measured at different current levels across parts; direct comparison requires normalization to the same test conditions.

Q5: Can I use a substitute part with higher voltage rating (60V) in a 55V application?

A: Yes. Using a MOSFET with a higher voltage rating (60V) in a 55V application is acceptable and provides additional safety margin. The device will operate within its rated specifications. No circuit modifications are required. This is a standard engineering practice for component substitution.

Q6: What does RoHS compliance mean for this part selection?

A: RoHS (Restriction of Hazardous Substances) compliance indicates the part does not contain restricted materials such as lead, cadmium, or hexavalent chromium. ROHS3 Compliant parts meet current EU and international environmental regulations. If your application or customer requirements mandate RoHS compliance, select from IRLL014NTRPBF, NCV8440ASTT1G, NTF3055-100T1G, NTF3055L108T1G, STN3NF06L, or ZXMN6A11GTA.

Q7: Which substitute part is best for high-frequency switching applications?

A: STN3NF06L is optimized for high-frequency operation due to its lowest gate charge (9nC @ 5V) and fast switching characteristics. Lower gate charge reduces switching losses and allows higher switching frequencies with the same gate drive circuit. This part is recommended for DC-DC converters, Class D amplifiers, and other high-frequency switching applications.

Q8: What is the difference between Rds On specifications measured at different conditions?

A: On-state resistance varies with gate voltage and drain current. For example, NTF3055-100T1G specifies Rds On as 110mOhm @ 1.5A, 10V, while STN3NF06L specifies 100mOhm @ 1.5A, 10V. These measurements at identical conditions (1.5A, 10V) allow direct comparison. Always verify Rds On at your application's operating point for accurate power dissipation calculations.

Q9: Are there any thermal performance differences between substitute parts?

A: Yes. Power dissipation ratings differ: 94-3316 (not specified), IRLL014NTRPBF (1W), NCV8440ASTT1G (1.69W), NTF3055-100T1G (1.3W), NTF3055L108T1G (1.3W), STN3NF06L (3.3W), and ZXMN6A11GTA (2W). Higher power dissipation ratings indicate better thermal performance. STN3NF06L has the highest rating, suitable for applications with sustained high current or high switching frequency.

Q10: Can I mix different substitute parts in the same circuit board?

A: Mixing different part numbers is not recommended in the same circuit unless they are explicitly qualified as interchangeable. Use a single part number across the design for consistency in electrical characteristics, thermal behavior, and manufacturing traceability. If substitution is necessary, replace all instances of the original part with the same substitute part number.

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