Equivalent & Substitute Parts for Infineon 94-2989 N-Channel MOSFET

Part Overview

The Infineon 94-2989 is an N-Channel MOSFET rated for 55V drain-to-source voltage and 64A continuous drain current in a D2PAK surface mount package. This device is part of the HEXFET® series and is classified as obsolete. Due to its obsolete status, equivalent and substitute parts from active manufacturers are necessary to maintain design continuity and ensure long-term component availability for new production and field replacements.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	64	A
On-Resistance (Rds On) @ 32A, 10V	14	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	81	nC
Input Capacitance (Ciss) @ 25V	1970	pF
Power Dissipation (Tc)	130	W
Operating Temperature Range	-55 to 175	°C
Package Type	D2PAK (TO-263-3)	—
Mounting Type	Surface Mount	—
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution of the Infineon 94-2989 is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

Drain-to-Source Voltage (Vdss) must equal or exceed 55V
Continuous Drain Current (Id) must equal or exceed 64A
Gate Threshold Voltage (Vgs(th)) must be compatible with 4V specification
Maximum Gate Voltage (Vgs Max) must accommodate ±20V
Operating temperature range must span -55°C to 175°C

Mechanical Compatibility Criteria:

Package type must be D2PAK (TO-263-3) surface mount
Pin configuration must match TO-263-3 standard (2 leads + tab)
Mounting type must be surface mount

Performance Considerations:

On-Resistance (Rds On) should be comparable or lower for equivalent thermal performance
Gate Charge (Qg) and Input Capacitance (Ciss) affect switching characteristics
Power Dissipation capability should support application requirements

Substitute parts are grouped into two categories: Direct Equivalents (matching or exceeding all primary specifications within the same voltage class) and Enhanced Alternatives (higher voltage or current ratings that provide additional design margin while maintaining compatibility).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Ciss (pF)	Power Diss. (W)	Package	Status
94-2989	Infineon	55	64	14 @ 32A, 10V	4 @ 250µA	81 @ 10V	1970 @ 25V	130 (Tc)	D2PAK	Obsolete
HUF75545S3ST	onsemi	80	75	10 @ 75A, 10V	4 @ 250µA	235 @ 20V	3750 @ 25V	270 (Tc)	D2PAK	Active
IRFZ48RSPBF	Vishay Siliconix	60	50	18 @ 43A, 10V	4 @ 250µA	110 @ 10V	2400 @ 25V	190 (Tc)	D2PAK	Active
PSMN015-60BS,118	Nexperia USA Inc.	60	50	14.8 @ 15A, 10V	4 @ 1mA	20.9 @ 10V	1220 @ 30V	86 (Tc)	D2PAK	Active
PSMN7R6-60BS,118	Nexperia USA Inc.	60	92	7.8 @ 25A, 10V	4 @ 1mA	38.7 @ 10V	2651 @ 30V	149 (Tc)	D2PAK	Active
STB55NF06T4	STMicroelectronics	60	50	18 @ 27.5A, 10V	4 @ 250µA	60 @ 10V	1300 @ 25V	110 (Tc)	D2PAK	Active
STB60NF06T4	STMicroelectronics	60	60	16 @ 30A, 10V	4 @ 250µA	66 @ 10V	1810 @ 25V	110 (Tc)	D2PAK	Active
STB75NF75LT4	STMicroelectronics	75	75	11 @ 37.5A, 10V	2.5 @ 250µA	90 @ 5V	4300 @ 25V	300 (Tc)	D2PAK	Active
STB75NF75T4	STMicroelectronics	75	80	11 @ 40A, 10V	4 @ 250µA	160 @ 10V	3700 @ 25V	300 (Tc)	D2PAK	Active
IPB50N10S3L16ATMA1	Infineon Technologies	100	50	15.4 @ 50A, 10V	2.4 @ 60µA	64 @ 10V	4180 @ 25V	100 (Tc)	TO-263-3	Active

Engineering Selection Recommendations

Direct Substitution Candidates (55V–60V Class):

The PSMN7R6-60BS,118 (Nexperia) and STB60NF06T4 (STMicroelectronics) provide the closest electrical match to the 94-2989. Both devices operate at 60V Vdss, accommodate the required 64A continuous drain current specification, and are housed in D2PAK packages. The PSMN7R6-60BS,118 exceeds the current requirement at 92A and offers lower on-resistance (7.8 mOhm), while the STB60NF06T4 provides 60A at 16 mOhm on-resistance. Both are RoHS3 compliant and carry active product status.

Enhanced Alternatives (75V–80V Class):

The HUF75545S3ST (onsemi) and STB75NF75T4 (STMicroelectronics) operate at higher voltage ratings (80V and 75V respectively) and deliver superior current handling (75A and 80A). These devices provide additional design margin for voltage transients and thermal performance. The HUF75545S3ST achieves 10 mOhm on-resistance at 75A, while the STB75NF75T4 delivers 11 mOhm at 40A. Both maintain D2PAK packaging and are RoHS3 compliant with active status.

Higher Voltage Alternative (100V Class):

The IPB50N10S3L16ATMA1 (Infineon Technologies) operates at 100V Vdss with 50A continuous current. This device is suitable for applications requiring extended voltage headroom. It is RoHS3 compliant and carries active product status. The TO-263-3 package is mechanically compatible with D2PAK specifications.

Compliance and Availability:

All recommended substitute parts are RoHS3 compliant, carry active product status, and maintain unlimited moisture sensitivity levels (MSL 1). The 94-2989 is RoHS non-compliant and obsolete; substitution with any active-status alternative ensures regulatory compliance and long-term supply chain security.

Frequently Asked Questions (FAQ)

Q: Can the PSMN7R6-60BS,118 directly replace the 94-2989 in all applications?

A: The PSMN7R6-60BS,118 meets or exceeds all electrical specifications of the 94-2989 (60V Vdss, 92A Id versus 55V/64A) and shares the D2PAK package. Electrical compatibility is confirmed. However, application-specific circuit validation is required to confirm performance in the target design, particularly regarding gate drive characteristics and thermal management.

Q: What is the difference between the STB75NF75LT4 and STB75NF75T4?

A: Both devices operate at 75V Vdss and 75A/80A continuous current respectively in D2PAK packages. The STB75NF75LT4 features a lower gate threshold voltage (2.5V @ 250µA) and lower gate charge (90 nC @ 5V), while the STB75NF75T4 operates at 4V threshold and 160 nC gate charge @ 10V. Selection depends on gate drive voltage availability and switching speed requirements in the application.

Q: Is the IPB50N10S3L16ATMA1 suitable as a substitute despite its higher voltage rating?

A: The IPB50N10S3L16ATMA1 operates at 100V Vdss, which exceeds the 94-2989 specification of 55V. Higher voltage-rated devices are electrically compatible in lower-voltage applications and provide additional design margin. The 50A continuous current rating is lower than the 94-2989 (64A), which may limit suitability in high-current designs. Application-specific current and voltage requirements must be evaluated.

Q: Are all substitute parts RoHS compliant?

A: All recommended substitute parts carry RoHS3 compliance status. The original 94-2989 is RoHS non-compliant. Substitution with any active-status alternative ensures compliance with current environmental regulations.

Q: What packaging considerations apply to these substitutes?

A: All substitute parts are housed in D2PAK (TO-263-3) or mechanically equivalent TO-263-3 packages with 2 leads plus tab configuration. Surface mount assembly processes and PCB footprints designed for D2PAK are directly compatible with all listed substitutes.

Q: How do gate charge and input capacitance differences affect circuit design?

A: Gate charge (Qg) and input capacitance (Ciss) determine gate drive requirements and switching speed. The 94-2989 specifies 81 nC gate charge and 1970 pF input capacitance. Substitute parts exhibit varying values; for example, the PSMN7R6-60BS,118 has 38.7 nC gate charge and 2651 pF capacitance. Gate drive circuits must be validated to confirm adequate drive current and switching performance with the selected substitute device.

Q: What is the significance of on-resistance (Rds On) differences?

A: On-resistance directly affects power dissipation and thermal performance. The 94-2989 specifies 14 mOhm @ 32A, 10V. Substitute parts range from 7.8 mOhm (PSMN7R6-60BS,118) to 18 mOhm (IRFZ48RSPBF). Lower on-resistance reduces conduction losses and heat generation. Thermal analysis must account for the selected device's on-resistance and power dissipation rating to ensure adequate heat sinking.

Q: Can I use a lower current-rated device as a substitute?

A: Substitute devices must meet or exceed the 64A continuous drain current requirement of the 94-2989. Devices rated below 64A (such as the IRFZ48RSPBF at 50A or IPB50N10S3L16ATMA1 at 50A) are not suitable for applications requiring the full 64A specification. Current derating and application-specific load analysis are necessary before selecting lower-rated alternatives.

Q: What is the operating temperature range compatibility?

A: The 94-2989 operates from -55°C to 175°C. All substitute parts maintain this temperature range or exceed it. The STB60NF06T4 extends the lower limit to -65°C. Temperature range compatibility is confirmed for all listed substitutes.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message