Equivalent & Substitute Parts for Infineon 94-2386 N-Channel MOSFET

Part Overview

The Infineon 94-2386 is an N-Channel MOSFET rated for 55V drain-to-source voltage with 49A continuous drain current in a D2PAK surface mount package. This device is classified as obsolete, which necessitates identification of functionally equivalent alternatives for ongoing design support and production requirements. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating the D2PAK package form factor.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	49	A
On-State Resistance (Rds On) @ 25A, 10V	17.5	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	63	nC
Input Capacitance (Ciss) @ 25V	1470	pF
Power Dissipation (Ta)	3.8	W
Power Dissipation (Tc)	94	W
Operating Temperature Range	-55 to 175	°C
Package Type	D2PAK (TO-263-3)	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution eligibility is determined by the following criteria:

Voltage Compatibility: Substitute parts must have a Vdss rating equal to or greater than 55V. All identified substitutes meet or exceed this requirement with 60V ratings, providing voltage margin.

Current Capability: Substitute parts must support continuous drain current (Id) at or above 49A. All identified substitutes provide 50A or greater current ratings.

On-State Resistance: Rds On values determine conduction losses. Substitutes with lower Rds On values improve thermal performance; higher values remain acceptable if thermal design accommodates increased dissipation.

Package Compatibility: All substitutes utilize D2PAK (TO-263-3) surface mount packaging, ensuring mechanical and thermal interface compatibility.

Gate Drive Characteristics: Gate threshold voltage (Vgs(th)) and gate charge (Qg) must be compatible with existing gate drive circuitry. All substitutes maintain Vgs(th) at or near 4V and Vgs(Max) ratings within ±20V to ±25V range.

Operating Temperature: All substitutes support the full -55°C to 175°C operating range.

Compliance Status: RoHS3 compliance and REACH unaffected status are provided for regulatory alignment.

Parameter Comparison

Parameter	94-2386 (Infineon)	FQB50N06TM (onsemi)	IRFZ44SPBF (Vishay)	IRFZ44STRLPBF (Vishay)	PSMN015-60BS,118 (Nexperia)	STB55NF06LT4 (STMicro)	STB55NF06T4 (STMicro)
Vdss (V)	55	60	60	60	60	60	60
Id @ 25°C (A)	49	50	50	50	50	55	50
Rds On (mOhm)	17.5 @ 25A	22 @ 25A	28 @ 31A	28 @ 31A	14.8 @ 15A	18 @ 27.5A	18 @ 27.5A
Vgs(th) (V)	4 @ 250µA	4 @ 250µA	4 @ 250µA	4 @ 250µA	4 @ 1mA	4.7 @ 250µA	4 @ 250µA
Qg (nC)	63 @ 10V	41 @ 10V	67 @ 10V	67 @ 10V	20.9 @ 10V	37 @ 4.5V	60 @ 10V
Ciss (pF)	1470 @ 25V	1540 @ 25V	1900 @ 25V	1900 @ 25V	1220 @ 30V	1700 @ 25V	1300 @ 25V
Power Dissipation Tc (W)	94	120	150	150	86	95	110
Operating Temp (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	D2PAK	D2PAK	D2PAK	D2PAK	D2PAK	D2PAK	D2PAK
Product Status	Obsolete	Obsolete	Active	Active	Active	Active	Active
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Active Product Status Priority: IRFZ44SPBF, IRFZ44STRLPBF, PSMN015-60BS,118, STB55NF06LT4, and STB55NF06T4 are classified as active products, ensuring continued availability and manufacturing support. FQB50N06TM is obsolete and should be considered only when active alternatives are unavailable.

RoHS3 Compliance: All substitute parts are RoHS3 compliant, addressing regulatory requirements for new designs and production. The original 94-2386 is RoHS non-compliant and should be replaced in applications requiring compliance certification.

Thermal Performance: PSMN015-60BS,118 provides the lowest Rds On (14.8 mOhm), resulting in reduced conduction losses and improved thermal efficiency. STB55NF06LT4 and STB55NF06T4 offer balanced thermal performance with 18 mOhm Rds On and higher power dissipation ratings (95W and 110W respectively).

Gate Drive Compatibility: PSMN015-60BS,118 features the lowest gate charge (20.9 nC), reducing gate drive power requirements. IRFZ44SPBF and IRFZ44STRLPBF maintain gate charge at 67 nC, comparable to the original part at 63 nC.

Packaging and Inventory: IRFZ44STRLPBF is supplied in Tape & Reel format (2144 pcs in stock), suitable for automated assembly. STB55NF06T4 offers the highest inventory availability (18,852 pcs) in Cut Tape & Digi-Reel format.

Frequently Asked Questions (FAQ)

Q: Can the 94-2386 be directly replaced with any of these substitutes?

A: Yes, all identified substitutes are electrically and mechanically compatible. The 60V Vdss rating of substitutes provides voltage margin above the original 55V specification. Current ratings of 50A or greater meet or exceed the 49A requirement. D2PAK packaging ensures identical thermal and mechanical interfaces.

Q: What is the primary difference between IRFZ44SPBF and IRFZ44STRLPBF?

A: Both parts are electrically identical with identical electrical specifications. The difference is packaging format: IRFZ44SPBF is supplied in Tube packaging, while IRFZ44STRLPBF is supplied in Tape & Reel format. Selection depends on assembly process requirements.

Q: Why does PSMN015-60BS,118 have lower gate charge than the original part?

A: Lower gate charge (20.9 nC versus 63 nC) reflects advanced semiconductor process technology. This reduces gate drive power consumption and switching losses, improving overall circuit efficiency. Gate drive circuitry designed for the original part will operate with reduced power dissipation when using PSMN015-60BS,118.

Q: Are there thermal design considerations when substituting to a part with higher Rds On?

A: Yes. FQB50N06TM and IRFZ44SPBF/IRFZ44STRLPBF have higher Rds On values (22 mOhm and 28 mOhm respectively) compared to the original 17.5 mOhm. This increases conduction losses. Thermal design must accommodate the higher power dissipation, or lower Rds On alternatives such as PSMN015-60BS,118 (14.8 mOhm) should be selected.

Q: What is the significance of the STripFET™ II series designation for STB55NF06LT4 and STB55NF06T4?

A: STripFET™ II is STMicroelectronics' advanced MOSFET technology platform. These parts offer optimized gate charge and on-state resistance characteristics. STB55NF06LT4 provides 55A current capability, while STB55NF06T4 provides 50A, both with improved thermal performance compared to legacy designs.

Q: Can the original 94-2386 be used in new designs requiring RoHS3 compliance?

A: No. The 94-2386 is RoHS non-compliant. New designs must use RoHS3 compliant alternatives such as IRFZ44SPBF, IRFZ44STRLPBF, PSMN015-60BS,118, STB55NF06LT4, or STB55NF06T4 to meet regulatory requirements.

Q: Which substitute offers the best balance of availability, compliance, and performance?

A: STB55NF06T4 combines active product status, RoHS3 compliance, high inventory availability (18,852 pcs), balanced thermal performance (110W Tc), and electrical specifications compatible with the original design. IRFZ44STRLPBF is an alternative with active status and Tape & Reel packaging for automated assembly.

Q: How do input capacitance differences affect circuit design?

A: Input capacitance (Ciss) ranges from 1220 pF to 1900 pF across substitutes. Higher Ciss increases gate drive current requirements and switching losses. PSMN015-60BS,118 (1220 pF) and STB55NF06T4 (1300 pF) minimize capacitive loading. IRFZ44SPBF and IRFZ44STRLPBF (1900 pF) require higher gate drive capability but remain compatible with standard gate drive circuits.

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