Equivalent & Substitute Parts for Infineon 94-2304 N-Channel MOSFET 30V 116A TO-220AB

Part Overview

The Infineon 94-2304 is an N-Channel MOSFET rated for 30V drain-to-source voltage with 116A continuous drain current in a TO-220AB through-hole package. This device is classified as Obsolete, which necessitates identification of equivalent and substitute components for ongoing applications. Substitute parts must maintain compatibility across electrical ratings, mechanical packaging, and thermal characteristics to ensure direct replacement capability in existing circuit designs.

Substiute Parts

94-2304
Infineon TechnologiesIn Stock: 123194-2304 Datasheet
94-2304
Current Part
IRL7833PBF
Infineon TechnologiesIn Stock: 26834IRL7833PBF Datasheet
IRL7833PBF
MFR Recommended
IRLB8721PBF
Infineon TechnologiesIn Stock: 15477IRLB8721PBF Datasheet
IRLB8721PBF
MFR Recommended
IRLB8748PBF
Infineon TechnologiesIn Stock: 26196IRLB8748PBF Datasheet
IRLB8748PBF
MFR Recommended
PSMN2R0-30PL,127
Nexperia USA Inc.In Stock: 10287PSMN2R0-30PL,127 Datasheet
PSMN2R0-30PL,127
MFR Recommended
PSMN4R3-30PL,127
Nexperia USA Inc.In Stock: 5627PSMN4R3-30PL,127 Datasheet
PSMN4R3-30PL,127
MFR Recommended
STP90NF03L
STMicroelectronicsIn Stock: 35428STP90NF03L Datasheet
STP90NF03L
MFR Recommended

Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 30 V
Continuous Drain Current (Id) @ 25°C 116 A
On-State Resistance (Rds On) @ 60A, 10V 7 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 1 V
Gate Charge (Qg) @ 4.5V 60 nC
Maximum Gate Voltage (Vgs) ±16 V
Input Capacitance (Ciss) @ 25V 3290 pF
Power Dissipation (Max) 180 W
Operating Temperature Range -55 to 175 °C
Package Type TO-220AB Through Hole
Series HEXFET®

Substitute Part Grouping Explanation

Substitution of the Infineon 94-2304 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

  • Drain-to-Source Voltage (Vdss): Must equal or exceed 30V
  • Continuous Drain Current (Id): Must equal or exceed 116A at 25°C
  • Package Type: Must be TO-220AB or compatible TO-220-3 through-hole configuration
  • FET Type: N-Channel MOSFET technology
  • Operating Temperature Range: Must encompass -55°C to 175°C

Secondary Compatibility Parameters:

  • On-State Resistance (Rds On): Lower values indicate improved performance
  • Gate Charge (Qg): Affects switching speed and gate drive requirements
  • Input Capacitance (Ciss): Influences gate drive circuit design
  • Power Dissipation Rating: Must support thermal requirements of the application

The substitute parts listed below meet or exceed the primary criteria, enabling direct functional replacement. Variations in secondary parameters reflect design improvements or different manufacturing approaches within the same voltage and current class.

Parameter Comparison

Part Number Manufacturer Vdss (V) Id @ 25°C (A) Rds On (mOhm) Qg (nC) Ciss (pF) Pd Max (W) Vgs Max (±V) Status
94-2304 Infineon 30 116 7.0 60 3290 180 16 Obsolete
IRL7833PBF Infineon 30 150 3.8 47 4170 140 20 Not For New Designs
IRLB8748PBF Infineon 30 92 4.8 23 2139 75 20 Active
IRLB8721PBF Infineon 30 62 8.7 13 1077 65 20 Active
PSMN2R0-30PL,127 Nexperia USA Inc. 30 100 2.1 117 6810 211 20 Obsolete
PSMN4R3-30PL,127 Nexperia USA Inc. 30 100 4.3 41.5 2400 103 20 Obsolete
STP90NF03L STMicroelectronics 30 90 6.5 47 2700 150 20 Not For New Designs

Engineering Selection Recommendations

For Active Product Status (Recommended for New Designs):

IRLB8748PBF and IRLB8721PBF are both classified as Active products with ROHS3 compliance. IRLB8748PBF provides 92A continuous drain current with 4.8mOhm on-state resistance, suitable for applications where the 116A rating of the original part is not fully utilized. IRLB8721PBF offers 62A continuous drain current with 8.7mOhm on-state resistance for lower current applications. Both devices feature ±20V maximum gate voltage, providing improved gate drive margin compared to the original ±16V specification.

For Equivalent Current Capability (100A+ Range):

IRL7833PBF delivers 150A continuous drain current with superior 3.8mOhm on-state resistance and is classified as Not For New Designs. PSMN2R0-30PL,127 provides 100A continuous drain current with 2.1mOhm on-state resistance but is Obsolete. Both devices exceed the 116A requirement of the original part.

For Thermal Performance Considerations:

PSMN2R0-30PL,127 offers the highest power dissipation rating at 211W, followed by the original 94-2304 at 180W. STP90NF03L provides 150W power dissipation with 90A continuous drain current. Selection should account for application thermal management requirements.

Compliance Status:

All substitute parts maintain RoHS3 compliance and REACH Unaffected status, consistent with the original device. Moisture Sensitivity Level remains at MSL 1 (Unlimited) across all alternatives.

Frequently Asked Questions (FAQ)

Q: Can IRLB8748PBF directly replace the 94-2304 in all applications?

A: IRLB8748PBF is electrically compatible for applications requiring up to 92A continuous drain current at 30V. If the original design requires the full 116A capability, this part is suitable only if the actual operating current does not exceed 92A. The improved on-state resistance (4.8mOhm vs. 7mOhm) provides better thermal performance.

Q: What is the significance of the gate charge (Qg) difference between the original and substitute parts?

A: Gate charge affects the energy required to switch the MOSFET and influences gate drive circuit design. Lower gate charge values (such as IRLB8721PBF at 13nC) reduce switching losses and gate drive power consumption. Higher values (such as PSMN2R0-30PL,127 at 117nC) require more robust gate drive circuits but may offer other performance benefits.

Q: Are all substitute parts available in the same TO-220AB package?

A: All listed substitute parts are packaged in TO-220AB or compatible TO-220-3 through-hole configuration, ensuring mechanical compatibility with existing PCB layouts and thermal management solutions.

Q: Why is the maximum gate voltage different between the original part (±16V) and most substitutes (±20V)?

A: The ±20V specification on substitute parts provides additional gate voltage margin, allowing for more robust gate drive circuit design. The original ±16V specification is still supported by all substitutes, ensuring backward compatibility.

Q: Which substitute part should be selected for new designs?

A: IRLB8748PBF and IRLB8721PBF are classified as Active products and are appropriate for new designs. Selection between these depends on the required continuous drain current: IRLB8748PBF for applications up to 92A, or IRLB8721PBF for applications up to 62A.

Q: How does on-state resistance (Rds On) affect circuit performance?

A: Lower on-state resistance reduces conduction losses and heat generation during normal operation. PSMN2R0-30PL,127 at 2.1mOhm provides the lowest resistance, while IRLB8721PBF at 8.7mOhm represents the highest among substitutes. Selection depends on thermal budget and efficiency requirements.

Q: Can parts rated for lower current (such as IRLB8721PBF at 62A) be used in place of the 116A original?

A: Lower-rated parts can be used only if the actual circuit operating current does not exceed their continuous drain current specification. Using an undersized device in a high-current application will result in thermal stress and potential failure.

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