Equivalent & Substitute Parts for Infineon 92-0235 IGBT 430V 20A 125W TO220AB

Part Overview

The Infineon 92-0235 is a through-hole IGBT rated for 430V collector-emitter breakdown voltage with 20A maximum collector current and 125W power dissipation in TO-220AB packaging. This component is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing system support and new design implementations. The part operates across the industrial temperature range of -40°C to 175°C junction temperature and features logic-level gate input with 27nC gate charge and 900ns/6µs switching delay characteristics.

Substiute Parts

92-0235
Infineon TechnologiesIn Stock: 98892-0235 Datasheet
92-0235
Current Part
ISL9V3040P3
onsemiIn Stock: 23098ISL9V3040P3 Datasheet
ISL9V3040P3
MFR Recommended

Key Parameters

Parameter Value Unit Significance for Substitution
Voltage - Collector Emitter Breakdown (Max) 430 V Critical - must match or exceed for circuit protection
Current - Collector (Ic) (Max) 20 A Critical - determines load-carrying capability
Power - Max 125 W Critical - thermal design parameter
Vce(on) (Max) 1.75 V @ 5V, 14A Important - affects conduction losses
Gate Charge 27 nC Important - gate drive circuit design parameter
Td (on/off) 900ns/6µs @25°C Important - switching speed and EMI characteristics
Operating Temperature -40 to 175 °C (TJ) Critical - environmental compatibility
Package / Case TO-220-3 - Critical - mechanical and thermal interface
Input Type Logic - Critical - gate drive compatibility

Substitute Part Grouping Explanation

Substitution of the Infineon 92-0235 is based on electrical and mechanical parameter alignment within the IGBT transistor category. The following parameters establish substitution validity:

Mandatory Matching Parameters:

  • Voltage rating: 430V collector-emitter breakdown voltage
  • Current rating: Minimum 20A collector current (21A acceptable as higher rating)
  • Package type: TO-220-3 through-hole configuration
  • Input type: Logic-level gate drive
  • Operating temperature range: -40°C to 175°C minimum

Compatible Parameter Ranges:

  • Power dissipation: 125W minimum (150W acceptable as higher rating)
  • Vce(on): Lower values acceptable (1.6V vs 1.75V represents improved performance)
  • Gate charge: Lower values acceptable (17nC vs 27nC reduces gate drive requirements)
  • Switching delay: Faster switching acceptable (4.8µs vs 6µs off-time)

The onsemi ISL9V3040P3 meets all mandatory parameters and demonstrates improved electrical characteristics across secondary parameters, qualifying it as a direct substitute.

Parameter Comparison

Parameter Infineon 92-0235 onsemi ISL9V3040P3 Compatibility
Manufacturer Part Number 92-0235 ISL9V3040P3 Different manufacturers
Voltage - Collector Emitter Breakdown (Max) 430 V 430 V Matched
Current - Collector (Ic) (Max) 20 A 21 A Compatible - higher rating
Power - Max 125 W 150 W Compatible - higher rating
Vce(on) (Max) 1.75 V @ 5V, 14A 1.6 V @ 4V, 6A Compatible - lower on-state voltage
Gate Charge 27 nC 17 nC Compatible - lower gate charge
Td (on/off) @ 25°C 900ns/6µs -/4.8µs Compatible - faster off-time
Operating Temperature -40°C ~ 175°C (TJ) -40°C ~ 175°C (TJ) Matched
Package / Case TO-220-3 TO-220-3 Matched
Input Type Logic Logic Matched
Product Status Obsolete Active Substitute is in active production
RoHS Status RoHS non-compliant ROHS3 Compliant Substitute meets current compliance

Engineering Selection Recommendations

Primary Substitute: onsemi ISL9V3040P3

The ISL9V3040P3 is the recommended substitute for the obsolete Infineon 92-0235 based on the following engineering criteria:

Electrical Compatibility: All critical electrical parameters meet or exceed the original specification. The 430V voltage rating and 21A current rating provide equivalent or superior performance. The improved Vce(on) of 1.6V compared to 1.75V reduces conduction losses. Lower gate charge (17nC vs 27nC) simplifies gate drive circuit design and reduces switching losses.

Mechanical Compatibility: Both components use identical TO-220-3 through-hole packaging, ensuring direct mechanical and thermal interface compatibility with existing PCB layouts and heatsink mounting arrangements.

Compliance Status: The ISL9V3040P3 holds ROHS3 compliance and REACH unaffected status, meeting current regulatory requirements. The original 92-0235 is RoHS non-compliant, making the substitute necessary for new designs subject to environmental regulations.

Availability: The ISL9V3040P3 is in active production with substantial inventory availability (23,020 pieces), ensuring long-term supply continuity compared to the obsolete status of the original part.

Series Classification: The ISL9V3040P3 belongs to the onsemi EcoSPARK® series, which incorporates optimized switching characteristics suitable for industrial IGBT applications.

Frequently Asked Questions (FAQ)

Q: Can the onsemi ISL9V3040P3 directly replace the Infineon 92-0235 in existing circuits?

A: Yes. Both components share identical TO-220-3 packaging, matching voltage and current ratings, logic-level gate input, and operating temperature range. Pin configuration and mechanical mounting are identical. No circuit modifications are required for direct substitution.

Q: What are the key differences between these two parts?

A: The ISL9V3040P3 demonstrates improved electrical performance with lower on-state voltage (1.6V vs 1.75V), reduced gate charge (17nC vs 27nC), and faster switching off-time (4.8µs vs 6µs). The substitute also offers higher power rating (150W vs 125W) and current rating (21A vs 20A). The ISL9V3040P3 is ROHS3 compliant while the original is non-compliant.

Q: Are there any gate drive circuit modifications needed?

A: No modifications are required. Both parts accept logic-level gate input. The lower gate charge of the ISL9V3040P3 (17nC vs 27nC) actually reduces gate drive circuit stress and power consumption, making it compatible with existing gate drive designs without adjustment.

Q: How do the thermal characteristics compare?

A: Both components operate across -40°C to 175°C junction temperature range. The ISL9V3040P3 has higher power dissipation rating (150W vs 125W), providing additional thermal margin. The improved Vce(on) reduces conduction losses, lowering overall heat generation in typical applications.

Q: Is the ISL9V3040P3 suitable for new product designs?

A: Yes. The ISL9V3040P3 is in active production status with full regulatory compliance (ROHS3, REACH unaffected). It is the appropriate choice for new designs requiring 430V/20A+ IGBT functionality in TO-220-3 packaging.

Q: What is the packaging difference between TO-220AB and TO-220-3?

A: Both designations refer to the same three-lead through-hole package. TO-220AB and TO-220-3 are equivalent package types used by different manufacturers. Pin configuration, lead spacing, and mounting hole positions are identical.

Q: Can circuit performance improve by using the ISL9V3040P3?

A: The substitute offers measurable improvements in switching speed and conduction efficiency due to lower gate charge and on-state voltage. These characteristics reduce switching losses and conduction losses respectively, potentially improving overall circuit efficiency. However, the circuit will function correctly with either component.

Q: What is the inventory status for long-term supply?

A: The Infineon 92-0235 is obsolete with no ongoing production. The onsemi ISL9V3040P3 is in active production with 23,020 pieces currently in stock, ensuring reliable long-term availability for both replacement and new design applications.

Request Quote (Ships tomorrow)