Equivalent & Substitute Parts for 8ETH06

Part Overview

The 8ETH06 is a general-purpose fast recovery diode manufactured by Vishay General Semiconductor - Diodes Division, rated for 600 V DC reverse voltage and 8 A average rectified current in a TO-220AC through-hole package. This component is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

The 8ETH06 belongs to the FRED Pt® series and features a 25 ns reverse recovery time, supporting fast switching applications. Due to its obsolete status, active equivalent parts from Vishay and alternative manufacturers are available to maintain design continuity and ensure supply chain reliability.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	600	V
Current - Average Rectified (Io)	8	A
Voltage - Forward (Vf) (Max) @ If	2.4 V @ 8 A	V
Reverse Recovery Time (trr)	25	ns
Current - Reverse Leakage @ Vr	50	µA @ 600 V
Mounting Type	Through Hole	—
Package / Case	TO-220-2	—
Operating Temperature - Junction	-65 to 175	°C
Technology	Standard	—
Speed	Fast Recovery ≤ 500 ns, > 200 mA (Io)	—

Substitute Part Grouping Explanation

Substitution of the 8ETH06 is determined by the following critical parameters:

Primary Matching Criteria:

Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 8 A
Mounting Type: Through Hole
Package / Case: TO-220-2 or TO-220AC
Technology: Standard
Speed Classification: Fast Recovery ≤ 500 ns, > 200 mA (Io)

Secondary Compatibility Factors:

Operating Temperature Range: -65°C to 175°C (or higher maximum)
Reverse Recovery Time (trr): ≤ 105 ns
Current - Reverse Leakage @ Vr: ≤ 150 µA @ 600 V
Forward Voltage (Vf): 1.3 V to 3.6 V @ 8 A (application-dependent)

Substitute parts are grouped into two categories:

Category 1: Direct Parametric Equivalents (8 A, 600 V) Parts with identical current and voltage ratings, matching the 8ETH06 specification exactly. These include VS-8ETH06-M3, BYC8-600,127, MUR860G, STTH8L06D, STTH8R06D, STTH806DIRG, STTH806DTI, and STTH8R06DIRG.

Category 2: Higher Current Capability (12 A, 600 V) The STTH12R06DIRG provides 12 A average rectified current at 600 V, offering increased current headroom while maintaining voltage compatibility. This part is suitable for applications requiring design margin or future current scaling.

Category 3: Lower Current Capability (5 A, 600 V) The STTH506DTI provides 5 A average rectified current at 600 V. This part is suitable only for applications with reduced current requirements.

Parameter Comparison

Manufacturer Part Number	Manufacturer	Vr (Max) [V]	Io [A]	Vf (Max) @ If [V]	trr [ns]	Ir @ Vr [µA]	Package	Tj (Max) [°C]	Product Status	RoHS Status
8ETH06	Vishay	600	8	2.4 @ 8 A	25	50 @ 600 V	TO-220-2	175	Obsolete	Non-compliant
VS-8ETH06-M3	Vishay	600	8	2.4 @ 8 A	25	50 @ 600 V	TO-220-2	175	Active	ROHS3 Compliant
BYC8-600,127	WeEn Semiconductors	600	8	2.9 @ 8 A	52	150 @ 600 V	TO-220-2	150	Active	ROHS3 Compliant
MUR860G	onsemi	600	8	1.5 @ 8 A	60	10 @ 600 V	TO-220-2	175	Active	ROHS3 Compliant
STTH12R06DIRG	STMicroelectronics	600	12	2.9 @ 12 A	45	45 @ 600 V	TO-220-2 Insulated	175	Active	ROHS3 Compliant
STTH506DTI	STMicroelectronics	600	5	3.6 @ 5 A	25	6 @ 600 V	TO-220-2 Insulated	175	Active	ROHS3 Compliant
STTH806DIRG	STMicroelectronics	600	8	1.85 @ 8 A	55	8 @ 600 V	TO-220-2 Insulated	175	Active	ROHS3 Compliant
STTH806DTI	STMicroelectronics	600	8	3.6 @ 8 A	30	10 @ 600 V	TO-220-2 Insulated	175	Active	ROHS3 Compliant
STTH8L06D	STMicroelectronics	600	8	1.3 @ 8 A	105	8 @ 600 V	TO-220-2	175	Active	ROHS3 Compliant
STTH8R06D	STMicroelectronics	600	8	2.9 @ 8 A	45	30 @ 600 V	TO-220-2	175	Active	ROHS3 Compliant
STTH8R06DIRG	STMicroelectronics	600	8	2.9 @ 8 A	45	30 @ 600 V	TO-220-2 Insulated	175	Active	ROHS3 Compliant

Engineering Selection Recommendations

Primary Recommendation: VS-8ETH06-M3

The VS-8ETH06-M3 from Vishay General Semiconductor - Diodes Division is the direct parametric equivalent to the obsolete 8ETH06. This part maintains identical electrical specifications including 600 V reverse voltage, 8 A average rectified current, 2.4 V forward voltage at 8 A, and 25 ns reverse recovery time. The VS-8ETH06-M3 is active in production status and ROHS3 compliant, providing regulatory compliance and supply chain continuity. This part is the preferred choice for direct replacement in existing designs.

Secondary Recommendation: STTH8R06D

The STTH8R06D from STMicroelectronics is an active, ROHS3-compliant alternative rated for 600 V and 8 A. It features a 45 ns reverse recovery time and 2.9 V forward voltage at 8 A. This part is suitable for applications where the slightly higher forward voltage and reverse recovery time are acceptable. The STTH8R06D offers high inventory availability (65,300 pcs) and extended temperature rating to 175°C maximum junction temperature.

Alternative Recommendation: MUR860G

The MUR860G from onsemi is an active, ROHS3-compliant part rated for 600 V and 8 A with superior forward voltage characteristics (1.5 V at 8 A). This part is suitable for applications prioritizing low forward voltage drop and heat dissipation reduction. The MUR860G features a 60 ns reverse recovery time and is available in high volume (32,500 pcs).

Higher Current Option: STTH12R06DIRG

The STTH12R06DIRG from STMicroelectronics provides 12 A average rectified current at 600 V, offering increased current capacity. This part is suitable for applications requiring design margin or future current scaling beyond the 8 A specification. The insulated TO-220AC package provides galvanic isolation between the die and case.

Lower Current Option: STTH506DTI

The STTH506DTI from STMicroelectronics is rated for 5 A at 600 V and is suitable only for applications with reduced current requirements below 8 A. This part should not be used as a substitute in designs requiring the full 8 A capability.

Compliance Consideration:

All recommended substitute parts are ROHS3 compliant and REACH unaffected, addressing regulatory requirements that the obsolete 8ETH06 does not meet. Selection should prioritize active production status parts to ensure long-term supply availability.

Frequently Asked Questions (FAQ)

Q: Can the VS-8ETH06-M3 be used as a direct replacement for the 8ETH06?

A: Yes. The VS-8ETH06-M3 is a parametric equivalent with identical voltage (600 V), current (8 A), forward voltage (2.4 V @ 8 A), and reverse recovery time (25 ns) specifications. The primary difference is product status (active vs. obsolete) and RoHS compliance (ROHS3 vs. non-compliant). The VS-8ETH06-M3 is the recommended direct replacement.

Q: What is the difference between TO-220-2 and TO-220AC packaging?

A: TO-220-2 and TO-220AC refer to the same physical package format with two leads. The designation difference reflects manufacturer nomenclature conventions. Both are through-hole mounted packages with identical mechanical and thermal characteristics. Parts specified as TO-220-2 Insulated include an isolation layer between the die and case, providing galvanic isolation.

Q: Can I use the STTH12R06DIRG (12 A) instead of the 8ETH06 (8 A)?

A: The STTH12R06DIRG can be used in applications where the 8 A current rating is a design margin rather than a hard limit. The higher current rating provides additional headroom. However, the forward voltage at rated current differs (2.9 V @ 12 A vs. 2.4 V @ 8 A), which affects thermal dissipation calculations. Verify that thermal management and circuit design accommodate these differences.

Q: Why do some substitute parts have higher reverse recovery times than the 8ETH06?

A: Reverse recovery time (trr) varies among manufacturers and product lines based on semiconductor process technology and design optimization. The 8ETH06 specifies 25 ns, while alternatives range from 25 ns to 105 ns. Higher reverse recovery times may increase switching losses in high-frequency applications. Select parts based on application switching frequency requirements.

Q: Are all substitute parts RoHS compliant?

A: All recommended substitute parts are ROHS3 compliant. The original 8ETH06 is RoHS non-compliant. If RoHS compliance is a design requirement, all substitute parts listed meet this criterion.

Q: What is the significance of forward voltage differences among substitute parts?

A: Forward voltage (Vf) directly affects power dissipation and thermal management. Lower forward voltage (e.g., MUR860G at 1.5 V @ 8 A) reduces heat generation compared to higher forward voltage parts (e.g., STTH806DTI at 3.6 V @ 8 A). Select based on thermal budget and efficiency requirements of the application.

Q: Can I use the BYC8-600,127 as a substitute?

A: The BYC8-600,127 from WeEn Semiconductors is rated for 600 V and 8 A, meeting the primary voltage and current specifications. However, it has a lower maximum junction temperature (150°C vs. 175°C) and higher reverse leakage current (150 µA vs. 50 µA). Use this part only if the application temperature range does not exceed 150°C and higher leakage current is acceptable.

Q: What is reverse leakage current and why does it matter?

A: Reverse leakage current (Ir) is the small current that flows through the diode when reverse biased. Higher leakage increases standby power consumption and heat generation. The 8ETH06 specifies 50 µA @ 600 V. Substitute parts range from 6 µA to 150 µA. Select based on application standby power requirements.

Q: Are there inventory considerations when selecting a substitute?

A: Yes. Inventory levels vary significantly among substitute parts. MUR860G has the highest availability (32,500 pcs), while STTH12R06DIRG and STTH8R06DIRG have lower availability (1,300 and 1,940 pcs respectively). For high-volume production, prioritize parts with adequate inventory or confirm supply chain commitments with distributors.

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