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8050SS-D-BP Equivalent & Substitute Parts Reference
Part Overview
The 8050SS-D-BP is a small-signal NPN bipolar junction transistor manufactured by Micro Commercial Co, rated for 25V collector-emitter breakdown voltage and 1.5A maximum collector current. This device is classified as obsolete, making equivalent substitute parts necessary for ongoing production and maintenance applications. The TO-92 through-hole package and 1W power rating position this transistor for general-purpose switching and amplification circuits in consumer and industrial electronics.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | NPN | — |
| Current - Collector (Ic) Max | 1.5 | A |
| Voltage - Collector Emitter Breakdown (Max) | 25 | V |
| Power - Max | 1 | W |
| Frequency - Transition | 100 | MHz |
| Mounting Type | Through Hole | — |
| Package / Case | TO-92-3 | — |
| Operating Temperature Range | -55 to 150 | °C |
Substitute Part Grouping Explanation
Substitution validity for the 8050SS-D-BP is determined by strict electrical and mechanical parameter matching across the following criteria:
Electrical Parameters (Must Match):
- Transistor Type: NPN
- Maximum Collector Current (Ic): 1.5 A
- Collector-Emitter Breakdown Voltage (VCEO): 25 V
- Maximum Power Dissipation: 1 W
- Transition Frequency: 100 MHz
- Vce Saturation characteristics: 500mV @ 80mA, 800mA
Mechanical Parameters (Must Match):
- Mounting Type: Through Hole
- Package: TO-92-3 (TO-226AA)
Compliance Parameters:
- RoHS compliance status
- ECCN and HTSUS classifications
Both substitute parts (SS8050CBU and SS8050DBU) satisfy all mandatory electrical and mechanical parameters. Variations in DC Current Gain (hFE) and product status do not disqualify substitution when all primary electrical ratings and package specifications are identical.
Parameter Comparison
| Parameter | 8050SS-D-BP (Main) | SS8050CBU (onsemi) | SS8050DBU (Fairchild) |
|---|---|---|---|
| Manufacturer | Micro Commercial Co | onsemi | Fairchild Semiconductor |
| Product Status | Obsolete | Active | Active |
| Transistor Type | NPN | NPN | NPN |
| Current - Collector (Ic) Max | 1.5 A | 1.5 A | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 25 V | 25 V | 25 V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 80mA, 800mA | 500mV @ 80mA, 800mA | 500mV @ 80mA, 800mA |
| Current - Collector Cutoff (Max) | 100 nA | 100 nA | 100 nA |
| DC Current Gain (hFE) Min @ Ic, Vce | 160 @ 100mA, 1V | 120 @ 100mA, 1V | 160 @ 100mA, 1V |
| Power - Max | 1 W | 1 W | 1 W |
| Frequency - Transition | 100 MHz | 100 MHz | 100 MHz |
| Operating Temperature (TJ) | -55 to 150 °C | 150 °C | 150 °C |
| Mounting Type | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-92-3 | TO-92-3 | TO-92-3 |
| RoHS Status | RoHS Compliant | ROHS3 Compliant | Not specified |
| ECCN | EAR99 | EAR99 | EAR99 |
Engineering Selection Recommendations
SS8050CBU (onsemi) is suitable for applications requiring active product status and ROHS3 compliance certification. This part maintains all electrical specifications of the 8050SS-D-BP with the exception of DC Current Gain minimum (120 vs. 160 @ 100mA, 1V). The lower hFE specification does not affect substitution validity when circuit design accommodates the stated gain range. Active manufacturing status ensures long-term availability and supply chain continuity.
SS8050DBU (Fairchild Semiconductor) provides direct electrical equivalence to the 8050SS-D-BP, including identical DC Current Gain specification (160 @ 100mA, 1V). Active product status supports sustained procurement. This part is suitable for designs where hFE matching to the original specification is required.
Both substitute parts are RoHS-compliant and share identical ECCN and HTSUS classifications with the main part. Selection between SS8050CBU and SS8050DBU depends on DC Current Gain requirements and supplier availability. Both are electrically and mechanically interchangeable in TO-92-3 through-hole applications.
Frequently Asked Questions (FAQ)
Q: Can SS8050CBU replace 8050SS-D-BP in all applications?
A: SS8050CBU is electrically and mechanically equivalent with one exception: DC Current Gain minimum is 120 @ 100mA, 1V versus 160 for the original part. Substitution is valid when circuit design accommodates this lower gain specification. All other electrical parameters, power ratings, voltage ratings, and package specifications are identical.
Q: What is the difference between SS8050CBU and SS8050DBU?
A: Both parts are electrically equivalent to 8050SS-D-BP in all critical parameters. The primary difference is DC Current Gain: SS8050CBU specifies 120 minimum, while SS8050DBU specifies 160 minimum (matching the original). Both are active products from different manufacturers (onsemi and Fairchild Semiconductor respectively).
Q: Are the substitute parts physically compatible with the original TO-92 footprint?
A: Yes. Both SS8050CBU and SS8050DBU use the TO-92-3 (TO-226AA) package, which is mechanically identical to the original 8050SS-D-BP package. Through-hole pin spacing and lead dimensions are equivalent.
Q: Why is the 8050SS-D-BP listed as obsolete?
A: Obsolete status indicates the part is no longer manufactured by Micro Commercial Co. Active substitute parts from onsemi and Fairchild Semiconductor provide equivalent functionality and are currently in production.
Q: Do the substitute parts meet RoHS requirements?
A: SS8050CBU is ROHS3 compliant. SS8050DBU RoHS status is not specified in available documentation. Both parts share EAR99 ECCN classification with the original part.
Q: Can I use these parts interchangeably in existing designs?
A: Yes, for applications where DC Current Gain variation between 120 and 160 is acceptable. If the original design requires hFE ≥ 160, use SS8050DBU. If the design accommodates hFE ≥ 120, either substitute is suitable. All other electrical and mechanical specifications are identical across all three parts.
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