Equivalent & Substitute Parts for 8050SS-C-BP NPN Bipolar Transistor

Part Overview

The 8050SS-C-BP is an NPN bipolar junction transistor manufactured by Micro Commercial Co, designed for general-purpose switching and amplification applications. This device operates at 25 V collector-emitter breakdown voltage with a maximum collector current of 1.5 A and 1 W power dissipation in a Through Hole TO-92 package.

The 8050SS-C-BP is classified as obsolete. Equivalent substitute parts are available from active manufacturers, ensuring continued design support and procurement availability for applications requiring this performance class.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	25	V
Current - Collector (Ic) (Max)	1.5	A
Power - Max	1	W
Frequency - Transition	100	MHz
Mounting Type	Through Hole	—
Package / Case	TO-92-3	—
Operating Temperature Range	-55 to 150	°C

Substitute Part Grouping Explanation

Substitution of the 8050SS-C-BP is determined by strict equivalence across the following electrical and mechanical parameters:

Critical Matching Parameters:

Transistor Type: NPN configuration
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 1.5 A
Power - Max: 1 W
Frequency - Transition: 100 MHz
Package / Case: TO-92-3 (TO-226-3)
Mounting Type: Through Hole

Saturation Characteristics:

Vce Saturation (Max): 500 mV @ 80 mA, 800 mA

Cutoff Characteristics:

Current - Collector Cutoff (Max): 100 nA

All substitute parts listed maintain these electrical specifications and physical package compatibility, enabling direct functional replacement in circuit designs.

Parameter Comparison

Parameter	8050SS-C-BP (Main)	SS8050CBU (onsemi)	SS8050DBU (Fairchild)
Manufacturer	Micro Commercial Co	onsemi	Fairchild Semiconductor
Product Status	Obsolete	Active	Active
Transistor Type	NPN	NPN	NPN
Voltage - Collector Emitter Breakdown (Max)	25 V	25 V	25 V
Current - Collector (Ic) (Max)	1.5 A	1.5 A	1.5 A
Vce Saturation (Max) @ Ib, Ic	500 mV @ 80 mA, 800 mA	500 mV @ 80 mA, 800 mA	500 mV @ 80 mA, 800 mA
Current - Collector Cutoff (Max)	100 nA	100 nA	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 100 mA, 1 V	120 @ 100 mA, 1 V	160 @ 100 mA, 1 V
Power - Max	1 W	1 W	1 W
Frequency - Transition	100 MHz	100 MHz	100 MHz
Operating Temperature (TJ)	-55 to 150 °C	150 °C	150 °C
Mounting Type	Through Hole	Through Hole	Through Hole
Package / Case	TO-92-3	TO-92-3	TO-92-3
RoHS Status	RoHS Compliant	ROHS3 Compliant	Not specified

Engineering Selection Recommendations

SS8050CBU (onsemi) is an active-status substitute with full electrical equivalence to the 8050SS-C-BP. This part maintains identical saturation and cutoff characteristics, DC current gain specifications, and thermal operating range. The SS8050CBU carries ROHS3 compliance certification and is suitable for applications requiring RoHS-compliant component sourcing. High inventory availability supports production requirements.

SS8050DBU (Fairchild Semiconductor) is an active-status substitute with electrical equivalence across all critical parameters. The DC current gain specification is higher (160 @ 100 mA, 1 V versus 120 @ 100 mA, 1 V), which remains within acceptable design margins for general-purpose switching applications. This part is suitable for designs where slightly elevated current gain does not introduce circuit instability. Inventory availability is comparable to the onsemi alternative.

Both substitute parts are recommended for new designs and production transitions from the obsolete 8050SS-C-BP, based on active manufacturer status and compliance certifications.

Frequently Asked Questions (FAQ)

Q: Can SS8050CBU and SS8050DBU be used interchangeably with 8050SS-C-BP?

A: Yes. Both substitute parts maintain identical electrical specifications for voltage, current, power, frequency, and saturation characteristics. The TO-92-3 package is mechanically identical, enabling direct board-level replacement without circuit modification.

Q: What is the significance of the DC current gain difference between SS8050CBU (120) and SS8050DBU (160)?

A: The DC current gain (hFE) specification defines the amplification factor in linear amplification circuits. The SS8050DBU exhibits higher current gain, which may reduce base drive requirements in switching applications. For general-purpose switching, both values are functionally equivalent. Circuit designers should verify gain-dependent biasing networks if transitioning between these parts in precision amplification circuits.

Q: Are the substitute parts available in the same package as the original 8050SS-C-BP?

A: Yes. Both SS8050CBU and SS8050DBU are supplied in the TO-92-3 (TO-226-3) Through Hole package, identical to the 8050SS-C-BP. No PCB layout modifications are required.

Q: What compliance certifications apply to these substitute parts?

A: SS8050CBU carries ROHS3 compliance certification. SS8050DBU compliance status is not specified in available documentation. Applications requiring RoHS compliance should specify SS8050CBU.

Q: What is the operating temperature range for the substitute parts?

A: Both SS8050CBU and SS8050DBU specify a maximum junction temperature (TJ) of 150°C. The 8050SS-C-BP specifies -55°C to 150°C. For applications requiring the full -55°C lower temperature limit, design verification is necessary.

Q: Are these parts suitable for high-frequency switching applications?

A: Yes. All three parts specify 100 MHz transition frequency, supporting switching applications in this frequency range. Circuit design must account for parasitic capacitance and switching transients inherent to the TO-92 package.

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