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Equivalent & Substitute Parts for Renesas 7130LA12PDG SRAM Memory IC
Part Overview
The Renesas 7130LA12PDG is an 8Kbit dual-port asynchronous SRAM memory integrated circuit designed for parallel data interface applications. This component features a 12 ns access time and operates within the 4.5V to 5.5V supply voltage range. The device is classified as obsolete, necessitating identification of functionally compatible substitute components for ongoing system support and new design implementations. The original 48-PDIP through-hole package configuration requires evaluation against modern surface-mount alternatives to accommodate current manufacturing processes.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Memory Type | Volatile SRAM | — |
| Memory Format | Dual Port, Asynchronous | — |
| Memory Size | 8Kbit | — |
| Memory Organization | 1K x 8 | — |
| Memory Interface | Parallel | — |
| Access Time | 12 | ns |
| Write Cycle Time | 12 | ns |
| Voltage Supply Range | 4.5 to 5.5 | V |
| Operating Temperature | 0 to 70 | °C |
| Mounting Type | Through Hole | — |
| Package Type | 48-DIP | — |
Substitute Part Grouping Explanation
Substitution eligibility for the 7130LA12PDG is determined by strict alignment with the following core parameters:
Critical Compatibility Parameters:
- Memory Type: Volatile SRAM (dual-port, asynchronous architecture)
- Memory Size: 8Kbit capacity
- Memory Organization: 1K x 8 bit configuration
- Memory Interface: Parallel interface
- Voltage Supply Range: 4.5V to 5.5V operation
- Operating Temperature Range: 0°C to 70°C
Performance Parameters:
- Access Time: Must not exceed 12 ns (equal or faster)
- Write Cycle Time: Must not exceed 12 ns (equal or faster)
The substitute part 7130LA20JG meets all critical compatibility parameters. The access time and write cycle time of 20 ns represent a performance degradation from the original 12 ns specification. This timing difference must be evaluated within the context of the target application's timing requirements. The substitute maintains identical memory capacity, organization, interface type, and voltage supply specifications.
Parameter Comparison
| Parameter | 7130LA12PDG (Main Part) | 7130LA20JG (Substitute) | Compatibility Status |
|---|---|---|---|
| Memory Type | Volatile SRAM | Volatile SRAM | Compatible |
| Memory Format | Dual Port, Asynchronous | Dual Port, Asynchronous | Compatible |
| Memory Size | 8Kbit | 8Kbit | Compatible |
| Memory Organization | 1K x 8 | 1K x 8 | Compatible |
| Memory Interface | Parallel | Parallel | Compatible |
| Access Time | 12 ns | 20 ns | Degraded Performance |
| Write Cycle Time | 12 ns | 20 ns | Degraded Performance |
| Voltage Supply Range | 4.5 to 5.5 V | 4.5 to 5.5 V | Compatible |
| Operating Temperature | 0 to 70 °C | 0 to 70 °C | Compatible |
| Mounting Type | Through Hole | Surface Mount | Different Package Style |
| Package Type | 48-DIP (0.600", 15.24mm) | 52-LCC (J-Lead) / 52-PLCC (19.13x19.13) | Different Package Type |
| Product Status | Obsolete | Active | Active Supply Available |
Engineering Selection Recommendations
The 7130LA20JG substitute part is classified as active product status with confirmed new original inventory availability. This status provides supply chain continuity for applications requiring 8Kbit dual-port asynchronous SRAM functionality.
Electrical Compatibility: The substitute maintains full electrical compatibility across memory capacity, organization, interface type, and supply voltage specifications. The 20 ns access and write cycle times represent a 67% increase in timing delay compared to the original 12 ns specification. System-level timing analysis is required to determine whether this performance degradation is acceptable for the target application.
Package Transition Consideration: The substitute transitions from through-hole 48-DIP packaging to surface-mount 52-LCC (J-Lead) packaging. This packaging change necessitates PCB layout modifications and assembly process adjustments. The pin count increases from 48 to 52 pins, requiring functional mapping verification.
Compliance Status: The 7130LA20JG carries RoHS3 compliance certification and REACH unaffected status, meeting current regulatory requirements for electronic component procurement.
Frequently Asked Questions (FAQ)
Q: Can the 7130LA20JG directly replace the 7130LA12PDG in existing circuit designs?
A: Electrical substitution is possible due to matching memory capacity, organization, interface type, and supply voltage specifications. However, the 20 ns access time versus the original 12 ns specification requires timing analysis. Additionally, the package change from 48-DIP through-hole to 52-LCC surface-mount requires PCB redesign and assembly process modification.
Q: What is the significance of the access time difference between 12 ns and 20 ns?
A: Access time defines the maximum delay from address input to valid data output. The 20 ns specification in the substitute part is 8 nanoseconds slower than the original. Applications with critical timing requirements may be affected. System-level timing margin analysis must confirm compatibility.
Q: Why does the substitute part have 52 pins instead of 48 pins?
A: The pin count difference results from the package type change. The 48-DIP package uses a dual in-line configuration, while the 52-LCC package uses a J-lead ceramic configuration. The additional pins may include redundant ground or power connections typical of surface-mount packages.
Q: Is the 7130LA20JG suitable for new design implementations?
A: Yes. The 7130LA20JG carries active product status with confirmed inventory availability. It meets current RoHS3 and REACH compliance requirements, making it suitable for new designs requiring 8Kbit dual-port asynchronous SRAM functionality with 20 ns access time specifications.
Q: What are the key parameters that must match for SRAM substitution?
A: Critical matching parameters include memory type (volatile SRAM), memory format (dual-port asynchronous), memory size (8Kbit), memory organization (1K x 8), memory interface (parallel), and supply voltage range (4.5V to 5.5V). Performance parameters such as access time and write cycle time must be equal to or faster than the original specification.
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