6A2-TP Equivalent & Substitute Parts

Part Overview

The 6A2-TP is a general-purpose rectifier diode manufactured by Micro Commercial Co, rated for 200V DC reverse voltage and 6A average rectified current in an R-6 axial through-hole package. This component is classified as "Not For New Designs," indicating it has reached end-of-life status. Identification of equivalent and substitute parts is necessary for legacy system maintenance, repair applications, and design transitions to active product alternatives.

Key Parameters

Parameter	Value	Unit
Voltage - DC Reverse (Vr) (Max)	200	V
Current - Average Rectified (Io)	6	A
Voltage - Forward (Vf) (Max) @ If	950 mV @ 6 A	mV
Current - Reverse Leakage @ Vr	10	µA @ 200 V
Speed	Standard Recovery >500ns, > 200mA (Io)	-
Mounting Type	Through Hole	-
Package / Case	R-6, Axial	-
Operating Temperature - Junction	-55°C ~ 125°C	°C
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitute parts for the 6A2-TP are categorized into two groups based on functional equivalence and electrical parameter compatibility:

Group 1: Direct Diode Equivalents (Same Category)

Direct substitutes maintain the same component category (Diodes, Rectifiers) and share critical electrical parameters: 200V DC reverse voltage rating and 6A average rectified current capacity. These parts are functionally interchangeable in rectification applications where the 6A2-TP was originally specified. Substitutes in this group include 6A02B-G, GI752-E3/54, and GI752-E3/73. All maintain through-hole mounting and axial package configurations, though specific package designations (R-6 versus P600) may differ. These parts are classified as Active products, ensuring ongoing availability and support.

Group 2: MOSFET Alternatives (Different Category)

MOSFET substitutes (ZXMN6A25DN8TA, ZXMN6A25KTC, ZXMN6A25N8TA, ZXMN6A25GTA) represent functional alternatives for switching applications where the 6A2-TP diode provides rectification or freewheeling functions. These parts operate at reduced voltage ratings (60V Drain-to-Source) but provide higher current capacity in certain configurations and active product status. MOSFET substitution requires circuit topology evaluation and is applicable only in designs where the lower voltage rating is acceptable and switching control is beneficial.

Key Parameters Determining Substitution:

Voltage - DC Reverse (Vr) or Drain-to-Source Voltage (Vdss)
Current - Average Rectified (Io) or Continuous Drain Current (Id)
Mounting Type (Through Hole versus Surface Mount)
Package / Case compatibility
Product Status (Active versus Not For New Designs)
Operating Temperature Range
RoHS Compliance

Parameter Comparison

Part Number	Manufacturer	Category	Voltage Rating	Current Rating	Package Type	Mounting	Product Status	Operating Temp (°C)
6A2-TP	Micro Commercial Co	Diodes, Rectifiers	200V (Vr)	6A (Io)	R-6, Axial	Through Hole	Not For New Designs	-55 ~ 125
1N5550	Solid State Inc.	Diodes, Rectifiers	200V (Vr)	3A (Io)	Axial	Through Hole	Active	-65 ~ 200
6A02B-G	Comchip Technology	Diodes, Rectifiers	200V (Vr)	6A (Io)	R-6, Axial	Through Hole	Active	-55 ~ 125
GI752-E3/54	Vishay General Semiconductor - Diodes Division	Diodes, Rectifiers	200V (Vr)	6A (Io)	P600, Axial	Through Hole	Active	-50 ~ 150
GI752-E3/73	Vishay General Semiconductor - Diodes Division	Diodes, Rectifiers	200V (Vr)	6A (Io)	P600, Axial	Through Hole	Active	-50 ~ 150
ZXMN6A25DN8TA	Diodes Incorporated	Transistors, FETs, MOSFETs	60V (Vdss)	3.8A (Id)	8-SOIC	Surface Mount	Active	-55 ~ 150
ZXMN6A25KTC	Diodes Incorporated	Transistors, FETs, MOSFETs	60V (Vdss)	7A (Id)	TO-252-3	Surface Mount	Active	-55 ~ 150
ZXMN6A25N8TA	Diodes Incorporated	Transistors, FETs, MOSFETs	60V (Vdss)	4.3A (Id)	8-SOIC	Surface Mount	Active	-55 ~ 150
ZXMN6A25GTA	Diodes Incorporated	Transistors, FETs, MOSFETs	60V (Vdss)	4.8A (Id)	SOT-223-3	Surface Mount	Active	-55 ~ 150

Engineering Selection Recommendations

For Direct Rectifier Replacement (Same Function, Same Package Type):

The 6A02B-G manufactured by Comchip Technology is the primary equivalent substitute for the 6A2-TP. Both components share identical electrical specifications (200V reverse voltage, 6A average rectified current), matching package designation (R-6, Axial), and through-hole mounting configuration. The 6A02B-G maintains the same operating temperature range (-55°C to 125°C) and is ROHS3 compliant. This part is classified as Active, ensuring continued availability and manufacturing support. The 6A02B-G is suitable for direct board-level substitution without circuit modification.

The GI752-E3/54 and GI752-E3/73 manufactured by Vishay General Semiconductor provide functional equivalence with identical electrical ratings (200V reverse voltage, 6A average rectified current). These parts utilize the P600 package designation instead of R-6, requiring mechanical verification of board layout compatibility. Both are Active products with ROHS3 compliance. Operating temperature range is -50°C to 150°C, providing extended high-temperature capability compared to the 6A2-TP. Forward voltage characteristics are superior (900 mV @ 6A versus 950 mV @ 6A), resulting in reduced power dissipation.

For Current-Limited Applications:

The 1N5550 manufactured by Solid State Inc. is a 3A-rated rectifier diode with 200V reverse voltage rating. This part is suitable only for applications where the circuit current requirement does not exceed 3A. The 1N5550 provides extended operating temperature range (-65°C to 200°C) and is classified as Active. This substitute is applicable for legacy designs where current demand is lower than the original 6A specification.

For Surface-Mount Design Transitions:

MOSFET alternatives (ZXMN6A25DN8TA, ZXMN6A25KTC, ZXMN6A25N8TA, ZXMN6A25GTA) are applicable only in new designs or redesigns where surface-mount technology is acceptable and circuit topology permits MOSFET substitution for diode rectification. These parts operate at 60V Drain-to-Source voltage, requiring verification that the application voltage does not exceed this rating. All MOSFET alternatives are Active products with ROHS3 compliance and extended operating temperature range (-55°C to 150°C). MOSFET substitution introduces switching control capability and reduced forward voltage drop characteristics but requires gate drive circuitry design.

Compliance and Certification:

All substitute parts listed maintain ROHS3 compliance and REACH Unaffected status, matching the regulatory classification of the 6A2-TP. Moisture Sensitivity Level (MSL) is 1 (Unlimited) for all diode and MOSFET alternatives, indicating no special moisture control requirements during storage or handling.

Frequently Asked Questions (FAQ)

Q: Can the 6A02B-G directly replace the 6A2-TP without any circuit modifications?

A: Yes. The 6A02B-G is a direct functional equivalent with identical voltage rating (200V), current rating (6A), package type (R-6 Axial), and mounting configuration (Through Hole). No circuit modifications are required for board-level substitution.

Q: What is the difference between the R-6 package (6A2-TP) and the P600 package (GI752-E3/54, GI752-E3/73)?

A: Both R-6 and P600 are axial through-hole package designations for rectifier diodes. The physical dimensions differ, requiring verification of board layout compatibility. Electrical performance is equivalent. Mechanical fit must be confirmed before substitution.

Q: Why is the 1N5550 listed as a substitute if it only provides 3A current rating versus the 6A requirement?

A: The 1N5550 is listed as a similar part for applications where the circuit current requirement is lower than 6A. It is not suitable for designs requiring the full 6A capacity of the 6A2-TP. Substitution is application-specific and requires current demand verification.

Q: Can MOSFET parts (ZXMN6A25 series) replace the 6A2-TP diode in all applications?

A: No. MOSFET substitution is applicable only in designs where the 60V Drain-to-Source voltage rating is acceptable and switching control is beneficial. The 6A2-TP operates at 200V reverse voltage; MOSFET alternatives are limited to 60V. Circuit topology evaluation is required to determine MOSFET suitability.

Q: What is the primary advantage of GI752-E3/54 and GI752-E3/73 over the 6A2-TP?

A: Both Vishay parts provide superior forward voltage characteristics (900 mV @ 6A versus 950 mV @ 6A), resulting in lower power dissipation. Extended operating temperature range (-50°C to 150°C versus -55°C to 125°C) provides additional thermal margin. Both are Active products with guaranteed long-term availability.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed (6A02B-G, GI752-E3/54, GI752-E3/73, 1N5550, and ZXMN6A25 series) are ROHS3 compliant and REACH Unaffected, matching the regulatory status of the 6A2-TP.

Q: What is the difference between "Not For New Designs" and "Active" product status?

A: "Not For New Designs" indicates the 6A2-TP has reached end-of-life and is no longer recommended for new product development. "Active" status indicates the part is in current production with ongoing manufacturer support and guaranteed availability. Active parts are preferred for new designs and long-term supply security.

Q: Can I use ZXMN6A25KTC (7A rating) instead of 6A2-TP for higher current capacity?

A: ZXMN6A25KTC provides 7A continuous drain current but operates at only 60V Drain-to-Source voltage compared to the 6A2-TP's 200V reverse voltage rating. Substitution is valid only if the application voltage does not exceed 60V. This part is a surface-mount component requiring PCB redesign and gate drive circuitry.

Q: What packaging considerations apply when substituting GI752-E3/54 for 6A2-TP?

A: Both parts are through-hole axial diodes, but GI752-E3/54 uses P600 package designation while 6A2-TP uses R-6. Physical dimensions differ. Board layout compatibility must be verified before substitution. Mechanical fit testing is recommended.

Q: Are there any temperature range limitations when substituting parts?

A: The 6A2-TP operates from -55°C to 125°C. GI752-E3/54 and GI752-E3/73 operate from -50°C to 150°C, providing extended high-temperature capability. The 1N5550 operates from -65°C to 200°C. MOSFET alternatives operate from -55°C to 150°C. Verify that substitute part temperature range meets application requirements.

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