Equivalent & Substitute Parts for Infineon 64-0007 N-Channel MOSFET

Part Overview

The Infineon 64-0007 is an N-Channel MOSFET rated for 200V drain-to-source voltage with 18A continuous drain current in a TO-220AB through-hole package. This device is classified as obsolete and is no longer recommended for new designs. The HEXFET® series component delivers 150W maximum power dissipation and operates across a temperature range of -55°C to 175°C.

Due to its obsolete status, equivalent and substitute parts are necessary for ongoing production support, maintenance applications, and design continuity. Substitute devices must maintain electrical compatibility across critical parameters including voltage rating, current capacity, and thermal characteristics while meeting modern compliance standards.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	200	V
Continuous Drain Current (Id) @ 25°C	18	A
On-State Resistance (Rds On) @ 11A, 10V	150	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	67	nC
Maximum Gate Voltage (Vgs)	±20	V
Input Capacitance (Ciss) @ 25V	1160	pF
Power Dissipation (Max)	150	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-220AB	Through Hole
Product Status	Obsolete

Substitute Part Grouping Explanation

Substitute parts for the Infineon 64-0007 are classified into two categories based on electrical parameter alignment and product status:

Manufacturer Recommended Substitutes (Direct Replacements): These parts maintain the primary electrical specifications of 200V Vdss and 18A continuous drain current. They are selected from active product lines with current manufacturing status and modern compliance certifications (RoHS3). These substitutes are suitable for direct replacement in existing designs.

Parametric Equivalents (Functional Alternatives): These parts share the core voltage and current ratings but may exhibit variations in secondary parameters such as on-state resistance, gate charge, or power dissipation. They provide functional compatibility for applications where exact parameter matching is not critical.

Critical Substitution Parameters:

Drain-to-Source Voltage (Vdss): Must equal or exceed 200V
Continuous Drain Current (Id): Must equal or exceed 18A
Package Type: TO-220AB through-hole configuration
Gate Voltage Rating (Vgs): Must support ±20V
Operating Temperature Range: Must encompass -55°C to 175°C minimum

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Power Dissipation (W)	Product Status	RoHS Status
64-0007	Infineon	200	18	150 @ 11A	67 @ 10V	150	Obsolete	Non-compliant
IRFB4020PBF	Infineon	200	18	100 @ 11A	29 @ 10V	100	Active	RoHS3 Compliant
IRFB4620PBF	Infineon	200	25	72.5 @ 15A	38 @ 10V	144	Active	RoHS3 Compliant
IRF640NPBF	Infineon	200	18	150 @ 11A	67 @ 10V	150	Not For New Designs	RoHS3 Compliant
IRF640PBF	Vishay Siliconix	200	18	180 @ 11A	70 @ 10V	125	Active	RoHS3 Compliant
PHP20NQ20T,127	NXP Semiconductors	200	20	130 @ 10A	65 @ 10V	150	Active	Not Specified
STP17NF25	STMicroelectronics	250	17	165 @ 8.5A	29.5 @ 10V	90	Active	RoHS3 Compliant
STP19NF20	STMicroelectronics	200	15	160 @ 7.5A	24 @ 10V	90	Active	RoHS3 Compliant
STP20NF20	STMicroelectronics	200	18	125 @ 10A	39 @ 10V	110	Active	RoHS3 Compliant

Engineering Selection Recommendations

Primary Recommendation: IRFB4020PBF

The IRFB4020PBF from Infineon Technologies is the preferred direct substitute for the obsolete 64-0007. This part maintains identical voltage (200V) and current (18A) ratings while offering improved on-state resistance (100 mOhm versus 150 mOhm), reduced gate charge (29 nC versus 67 nC), and lower power dissipation (100W versus 150W). The device carries active product status with RoHS3 compliance, ensuring long-term availability and regulatory alignment. Packaging remains TO-220AB through-hole configuration with identical thermal and mechanical characteristics.

Secondary Recommendation: STP20NF20

The STP20NF20 from STMicroelectronics provides functional equivalence with 200V Vdss and 18A continuous drain current. This STripFET™ series device demonstrates superior on-state resistance (125 mOhm) and reduced gate charge (39 nC) compared to the original part. Operating temperature range extends to 175°C, matching the original specification. Active product status and RoHS3 compliance support production continuity. Power dissipation is rated at 110W, suitable for thermal management in most applications.

Alternative for Higher Current Applications: IRFB4620PBF

The IRFB4620PBF offers increased current capacity (25A versus 18A) at the same 200V voltage rating. This HEXFET® series device provides superior on-state resistance (72.5 mOhm) and maintains 200V Vdss compatibility. Active status and RoHS3 compliance are confirmed. This substitute is appropriate for applications requiring current margin or thermal headroom beyond the original 18A specification.

Parametric Equivalent: IRF640NPBF

The IRF640NPBF from Infineon provides exact electrical parameter matching to the original 64-0007, including identical on-state resistance (150 mOhm), gate charge (67 nC), and power dissipation (150W). However, this device carries "Not For New Designs" status, limiting its suitability for new production. RoHS3 compliance is confirmed. This part is appropriate only for maintenance and repair of existing equipment where exact parameter matching is required.

Cross-Manufacturer Option: IRF640PBF

The IRF640PBF from Vishay Siliconix maintains 200V Vdss and 18A current ratings with active product status and RoHS3 compliance. On-state resistance is slightly elevated at 180 mOhm. Operating temperature range is limited to -55°C to 150°C, which does not fully encompass the original -55°C to 175°C specification. This substitute is suitable for applications operating within the reduced temperature range.

Higher Voltage Alternative: STP17NF25

The STP17NF25 from STMicroelectronics provides elevated voltage rating (250V Vdss) with 17A continuous drain current. This STripFET™ II series device is suitable for applications requiring voltage margin above 200V. Current capacity is slightly reduced (17A versus 18A), and power dissipation is lower (90W). Operating temperature is limited to 150°C. RoHS3 compliance is confirmed.

Frequently Asked Questions (FAQ)

Q: Can the IRFB4020PBF directly replace the obsolete 64-0007 without circuit modifications?

A: Yes. The IRFB4020PBF maintains identical voltage (200V) and current (18A) ratings, package configuration (TO-220AB), and gate voltage specifications (±20V). The improved on-state resistance and reduced gate charge provide performance benefits without requiring design changes. Thermal management may be improved due to lower power dissipation.

Q: What is the difference between "Manufacturer Recommended" and "Parametric Equivalent" substitutes?

A: Manufacturer Recommended substitutes are active products from the same or established alternative manufacturers with current production status and modern compliance certifications. Parametric Equivalents match the electrical specifications of the original part but may have different product status or compliance certifications. The IRF640NPBF is a parametric equivalent with exact electrical matching but "Not For New Designs" status.

Q: Is the STP20NF20 suitable for applications requiring the full -55°C to 175°C temperature range?

A: Yes. The STP20NF20 operates across -55°C to 175°C, matching the original 64-0007 specification. This makes it appropriate for applications requiring the full temperature range, including industrial and automotive environments.

Q: Why does the IRFB4620PBF have higher current capacity (25A) than the original part (18A)?

A: The IRFB4620PBF is a higher-performance variant in the same voltage class. The increased current capacity results from improved semiconductor design and lower on-state resistance (72.5 mOhm versus 150 mOhm). This device is suitable for applications where current margin or thermal headroom is beneficial.

Q: Can the STP17NF25 be used in circuits designed for 200V operation?

A: Yes. The STP17NF25 is rated for 250V Vdss, which exceeds the 200V requirement. The higher voltage rating provides margin for transient overvoltage conditions. However, continuous drain current is rated at 17A, which is slightly below the original 18A specification. Verify that the application does not require the full 18A capacity.

Q: What is the significance of RoHS3 compliance for substitute selection?

A: RoHS3 compliance indicates that the device meets current European Union Restriction of Hazardous Substances regulations. All recommended substitutes carry RoHS3 certification, ensuring regulatory alignment for new production and long-term supply chain stability. The original 64-0007 is RoHS non-compliant, making compliant substitutes necessary for modern manufacturing standards.

Q: Are there package differences between the recommended substitutes?

A: All recommended substitutes use TO-220AB or TO-220 through-hole packages, maintaining mechanical and thermal compatibility with the original 64-0007. Pinout and mounting footprint are identical across all listed alternatives.

Q: How does gate charge (Qg) affect substitute selection?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge (such as 29 nC in the IRFB4020PBF versus 67 nC in the original) reduces switching losses and allows faster switching speeds. For applications with fixed switching frequency, lower gate charge provides efficiency improvement without circuit modification.

Q: Is the PHP20NQ20T,127 from NXP Semiconductors a suitable substitute?

A: Yes. The PHP20NQ20T,127 maintains 200V Vdss with 20A continuous drain current, exceeding the original 18A specification. On-state resistance is 130 mOhm, providing improved performance. The device is active and suitable for direct substitution. RoHS status is not specified in the available data.

Q: What thermal considerations apply when substituting the 64-0007?

A: The original part is rated for 150W maximum power dissipation. Most recommended substitutes have equal or lower power dissipation ratings, which may reduce thermal management requirements. The IRFB4020PBF (100W) and STP20NF20 (110W) require less cooling than the original. Verify that existing thermal design accommodates the substitute device's power dissipation characteristics.

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