Equivalent & Substitute Parts: Goford Semiconductor 630AT N-Channel MOSFET

Part Overview

The Goford Semiconductor 630AT is an N-Channel MOSFET utilizing TrenchFET® technology, rated for 200 V drain-to-source voltage with 9 A continuous drain current and 83 W maximum power dissipation. The device is housed in a TO-220-3 through-hole package and is currently in active production status. This part is suitable for switching and power conversion applications requiring high-voltage, moderate-current performance. Identifying equivalent and substitute parts is necessary to ensure design flexibility, manage supply chain continuity, and maintain compatibility across manufacturing revisions.

Substiute Parts

630AT

Goford SemiconductorIn Stock: 758630AT Datasheet

Current PartRFQ

630AT

Goford SemiconductorIn Stock: 758630AT Datasheet

Parametric EquivalentRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the Goford Semiconductor 630AT is determined by strict equivalence across the following critical parameters:

Electrical Specifications:

• Drain-to-Source Voltage (Vdss): 200 V
• Continuous Drain Current (Id): 9 A at 25°C
• On-State Resistance (Rds On): 250 mOhm maximum at 1 A, 10 V gate-source voltage
• Gate Threshold Voltage (Vgs(th)): 2.2 V maximum at 250 µA
• Gate Charge (Qg): 11.8 nC maximum at 10 V
• Input Capacitance (Ciss): 509 pF maximum at 25 V
• Power Dissipation: 83 W maximum

Mechanical and Environmental Specifications:

• Package: TO-220-3 through-hole configuration
• Operating Temperature: -55°C to 150°C junction temperature
• Technology: N-Channel MOSFET with TrenchFET® architecture
• Compliance: ROHS3 Compliant, REACH Unaffected

Substitute parts must match all electrical parameters within the specified tolerances and maintain identical package configuration and environmental ratings. Parts that deviate from any of these parameters are not considered direct substitutes.

Parameter Comparison

Engineering Selection Recommendations

The Goford Semiconductor 630AT is an active-status component with full ROHS3 compliance and REACH unaffected status, making it suitable for current production designs and applications subject to environmental regulations. The part is available in production quantities (736 pcs in stock) and maintains consistent electrical and mechanical specifications across all identified equivalents.

Selection of substitute parts should be based on:

1. Electrical Parameter Matching: All electrical specifications including Vdss, Id, Rds On, Vgs(th), Qg, and Ciss must match exactly as specified.

2. Package Compatibility: The TO-220-3 through-hole package configuration must be maintained to ensure mechanical fit and thermal management characteristics in existing PCB designs.

3. Compliance Verification: Substitute parts must maintain ROHS3 compliance and REACH unaffected status for applications subject to environmental regulations.

4. Product Status: Active production status ensures long-term availability and supply chain stability.

5. Thermal Performance: The 83 W maximum power dissipation rating and -55°C to 150°C operating temperature range must be preserved in substitute selections.

Frequently Asked Questions (FAQ)

Q: What defines a direct substitute for the 630AT MOSFET?

A: A direct substitute must match all electrical parameters (Vdss, Id, Rds On, Vgs(th), Qg, Ciss, power dissipation), maintain the TO-220-3 package configuration, support the same operating temperature range (-55°C to 150°C), and preserve ROHS3 compliance status.

Q: Can the 630AT be replaced with a different package type?

A: No. The TO-220-3 through-hole package is integral to the thermal and mechanical design. Alternative package types (such as surface-mount variants) are not direct substitutes and require circuit board redesign.

Q: Are there any parametric deviations acceptable when selecting a substitute?

A: No. All electrical parameters must match exactly as specified. Deviations in Vdss, Id, Rds On, or other ratings indicate a different device class and are not acceptable substitutes.

Q: What is the significance of the TrenchFET® technology designation?

A: TrenchFET® is a specific MOSFET architecture that affects on-state resistance, switching characteristics, and thermal performance. Substitute parts must utilize the same technology to maintain equivalent electrical behavior.

Q: Is the 630AT suitable for high-temperature applications?

A: The 630AT supports operation up to 150°C junction temperature, making it suitable for elevated-temperature environments within this limit. Substitute parts must maintain this temperature rating.

Q: What compliance certifications are relevant for the 630AT?

A: The 630AT is ROHS3 compliant and REACH unaffected. These certifications must be maintained in any substitute part selection for applications subject to environmental regulations.

Q: How does gate charge (Qg) affect circuit design?

A: Gate charge determines the energy required to switch the MOSFET on and off. The 11.8 nC specification must be matched in substitutes to maintain consistent gate drive circuit performance and switching speed.

Q: What role does input capacitance (Ciss) play in circuit performance?

A: Input capacitance affects gate drive requirements and switching transient behavior. The 509 pF specification must be preserved in substitutes to maintain circuit stability and switching characteristics.