Equivalent & Substitute Parts for Infineon 62-0203PBF P-Channel MOSFET

Part Overview

The Infineon 62-0203PBF is a P-Channel MOSFET rated for 12V drain-to-source voltage with 16A continuous drain current in an 8-SO surface mount package. This device is classified as obsolete, making identification of suitable substitute components essential for ongoing design support and production continuity. The part belongs to the HEXFET® series and is designed for applications requiring moderate voltage and current switching capabilities in compact form factors.

Substiute Parts

62-0203PBF

Infineon TechnologiesIn Stock: 98162-0203PBF Datasheet

Current PartRFQ

FDS4465

onsemiIn Stock: 30559FDS4465 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the Infineon 62-0203PBF is determined by strict compatibility across the following electrical and mechanical parameters:

Channel Type: Both main and substitute parts must be P-Channel MOSFETs to maintain circuit polarity and gate drive requirements.

Package Compatibility: The 8-SOIC (0.154", 3.90mm Width) package is mandatory for PCB layout compatibility and automated assembly processes.

Voltage Rating: Substitute parts must have Vdss equal to or greater than 12V to ensure safe operation under the same or higher voltage conditions.

Current Capability: Substitute parts must support continuous drain current at or above 16A to meet or exceed the original design current requirements.

On-Resistance: Rds On values must be comparable to ensure similar power dissipation and thermal performance in the application circuit.

Gate Drive Voltage: Substitute parts must operate with standard gate drive voltages (4.5V and 1.8V) to maintain compatibility with existing driver circuits.

Temperature Range: Operating temperature specifications must encompass the original -55°C to 150°C range or extend it.

Compliance & Status: Active product status and relevant certifications (RoHS, REACH) are required for new designs and production continuity.

Parameter Comparison

Engineering Selection Recommendations

The onsemi FDS4465 is a direct substitute for the Infineon 62-0203PBF based on the following engineering criteria:

Package Compatibility: Both devices use the 8-SOIC (0.154", 3.90mm Width) package, ensuring identical PCB footprint and assembly compatibility without layout modifications.

Electrical Compatibility: The FDS4465 provides a higher voltage rating (20V vs. 12V), which ensures safe operation in circuits designed for the 12V specification. The continuous drain current of 13.5A is slightly lower than the original 16A specification; however, this difference is acceptable for applications where the design margin permits operation at reduced current levels or where the actual circuit current requirement is below 13.5A.

On-Resistance Performance: The FDS4465 exhibits 8.5 mOhm on-resistance compared to 7 mOhm for the original part. This 1.5 mOhm increase results in marginally higher power dissipation but remains within acceptable limits given the identical 2.5W maximum power dissipation rating.

Gate Drive Compatibility: Both parts operate with 4.5V and 1.8V gate drive voltages, maintaining full compatibility with existing driver circuits.

Product Status & Compliance: The FDS4465 is an active product with RoHS3 compliance and REACH unaffected status, ensuring long-term availability and regulatory compliance for production and new designs.

Temperature Range: The FDS4465 extends the operating temperature range to 175°C, providing enhanced thermal margin compared to the original 150°C specification.

Frequently Asked Questions (FAQ)

Q: Can the onsemi FDS4465 be used as a direct replacement for the Infineon 62-0203PBF without PCB modifications?

A: Yes. Both devices use the identical 8-SOIC (0.154", 3.90mm Width) package, allowing direct substitution without PCB layout changes or re-routing.

Q: What is the impact of the lower continuous drain current (13.5A vs. 16A) on circuit performance?

A: The FDS4465 is suitable for applications where the actual circuit current requirement does not exceed 13.5A. If the design requires the full 16A capability, the FDS4465 may not be appropriate. Verify the actual current demand in your specific application before substitution.

Q: Does the higher gate threshold voltage (1.5V vs. 900mV) affect gate drive circuit design?

A: The higher threshold voltage of the FDS4465 requires a slightly higher gate voltage to achieve full on-state conduction. However, both parts are designed to operate with standard 4.5V gate drive voltages, so existing driver circuits remain compatible. The difference may result in slightly slower switching transitions but does not require circuit redesign.

Q: Is the 1.5 mOhm increase in on-resistance (8.5 mOhm vs. 7 mOhm) significant?

A: The increase is approximately 21% higher on-resistance. In applications with high continuous current or tight thermal budgets, this may result in measurably higher power dissipation. Calculate the actual power loss in your circuit: P = I²R. For example, at 13.5A, the FDS4465 dissipates approximately 1.55W compared to 1.27W for the original part. Both remain within the 2.5W maximum rating.

Q: What is the advantage of the extended temperature range (-55°C to 175°C) of the FDS4465?

A: The extended upper temperature limit of 175°C provides additional thermal margin in high-temperature environments and reduces the risk of thermal shutdown in applications operating near the original 150°C limit.

Q: Are there any compliance or supply chain advantages to using the FDS4465?

A: Yes. The FDS4465 is an active product with confirmed inventory availability and RoHS3 compliance, ensuring long-term supply continuity and regulatory compliance for new production runs. The obsolete status of the original part makes the FDS4465 the preferred choice for ongoing designs.

Q: Can both parts be used interchangeably in existing production?

A: Substitution is permissible only after verification that the actual circuit current requirement does not exceed 13.5A and that the slightly higher on-resistance is acceptable for the thermal design. Perform functional testing to confirm performance in your specific application before full production transition.