MOSFET N-Channel 30V 19A Equivalent & Substitute Parts: 62-0136PBF

Part Overview

The Infineon Technologies 62-0136PBF is an N-Channel MOSFET rated for 30V drain-to-source voltage with 19A continuous drain current at 25°C. This device is designed for surface mount applications in 8-SOIC packaging and operates across the temperature range of -55°C to 150°C. The part is classified as obsolete, making identification of equivalent and substitute components essential for ongoing design support, production continuity, and system maintenance.

Substiute Parts

62-0136PBF

Infineon TechnologiesIn Stock: 119862-0136PBF Datasheet

Current PartRFQ

SI4634DY-T1-E3

Vishay SiliconixIn Stock: 18185SI4634DY-T1-E3 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the 62-0136PBF is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 30V
• Continuous Drain Current (Id): Must equal or exceed 19A at 25°C
• On-Resistance (Rds On): Must not exceed the maximum specified value to maintain thermal performance
• Gate Threshold Voltage (Vgs th): Must fall within acceptable operating range
• Gate Charge (Qg): Lower values indicate faster switching characteristics
• Input Capacitance (Ciss): Affects gate drive requirements
• Power Dissipation: Must support thermal requirements of the application
• Operating Temperature Range: Must encompass -55°C to 150°C

Mechanical Compatibility Criteria:

• Mounting Type: Surface Mount required
• Package / Case: 8-SOIC form factor required for PCB footprint compatibility
• Moisture Sensitivity Level (MSL): Level 1 (Unlimited) acceptable

The Vishay Siliconix SI4634DY-T1-E3 meets all electrical and mechanical substitution criteria for the 62-0136PBF.

Parameter Comparison

Engineering Selection Recommendations

The SI4634DY-T1-E3 from Vishay Siliconix is a direct substitute for the obsolete 62-0136PBF. Selection of this substitute is supported by the following factors:

Product Status Consideration: The 62-0136PBF is classified as obsolete. The SI4634DY-T1-E3 maintains active product status, ensuring long-term availability, ongoing manufacturer support, and continued compliance with current industry standards.

Electrical Performance: The SI4634DY-T1-E3 meets or exceeds all critical electrical parameters. The substitute provides higher continuous drain current (24.5A versus 19A), ensuring adequate headroom for the application. On-resistance remains within acceptable limits. The substitute's lower input capacitance (3150 pF versus 3710 pF) may reduce gate drive power requirements.

Compliance and Certifications: The SI4634DY-T1-E3 is RoHS3 compliant, meeting current environmental and regulatory requirements. Both parts share identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications, confirming trade compliance equivalence.

Mechanical Compatibility: Both devices utilize 8-SOIC surface mount packaging with identical MSL ratings. PCB footprint compatibility is confirmed, eliminating the need for layout modifications.

Thermal Performance: The SI4634DY-T1-E3 provides enhanced thermal performance with a maximum power dissipation of 5.7W at Tc, compared to 2.5W at Ta for the original part. This improvement supports reliable operation across the full temperature range.

Frequently Asked Questions (FAQ)

Q: Can the SI4634DY-T1-E3 be used as a direct replacement for the 62-0136PBF without PCB modifications?

A: Yes. Both devices are housed in 8-SOIC surface mount packages with identical pin configurations and footprints. No PCB layout changes are required for mechanical substitution.

Q: What is the significance of the higher drain current rating (24.5A) in the SI4634DY-T1-E3 compared to the original 19A specification?

A: The higher current rating provides design margin and thermal headroom. The substitute can safely handle the original application's 19A requirement while offering additional capacity for future design iterations or higher-stress operating conditions.

Q: How do the on-resistance values compare between the two parts?

A: The 62-0136PBF specifies 4.5 mOhm at 19A and 10V. The SI4634DY-T1-E3 specifies 5.2 mOhm at 15A and 10V. The substitute's on-resistance is slightly higher but remains within acceptable limits for most applications. The difference in measurement current (15A versus 19A) should be considered when evaluating thermal performance in the specific application.

Q: Does the higher gate charge (68 nC versus 44 nC) in the substitute affect gate drive circuit design?

A: The substitute's higher gate charge requires slightly more energy to switch the device. Gate drive circuits must supply adequate current to charge the gate within the required switching time. Existing gate drive circuits designed for the 62-0136PBF should be evaluated to confirm they can deliver the additional charge without exceeding switching time specifications.

Q: Are there any compliance or regulatory differences between the two parts?

A: No. Both parts share identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications. The SI4634DY-T1-E3 is RoHS3 compliant, meeting current environmental standards. The 62-0136PBF's compliance status is not specified in the provided data.

Q: What is the practical impact of the lower input capacitance in the SI4634DY-T1-E3?

A: The substitute's lower input capacitance (3150 pF versus 3710 pF) may reduce gate drive power dissipation and allow for faster switching transitions. This can improve overall circuit efficiency, particularly in high-frequency switching applications.

Q: Is the SI4634DY-T1-E3 available in the same packaging options as the 62-0136PBF?

A: The SI4634DY-T1-E3 is supplied in Cut Tape (CT) and Digi-Reel® packaging formats. Both are standard surface mount delivery methods compatible with automated assembly processes. Confirm packaging availability with your supplier to match your procurement requirements.