Equivalent & Substitute Parts for 62-0063PBF N-Channel MOSFET

Part Overview

The 62-0063PBF is an N-Channel MOSFET manufactured by Infineon Technologies, part of the HEXFET® series. This device is rated for 12V drain-to-source voltage with 15A continuous drain current in a surface mount 8-SOIC package. The product status is obsolete, making identification of equivalent and substitute parts essential for ongoing design support and component procurement.

Substiute Parts

62-0063PBF

Infineon TechnologiesIn Stock: 80462-0063PBF Datasheet

Current PartRFQ

DMN2009LSS-13

Diodes IncorporatedIn Stock: 15325DMN2009LSS-13 Datasheet

MFR RecommendedRFQ

STS6NF20V

STMicroelectronicsIn Stock: 17636STS6NF20V Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the 62-0063PBF is determined by the following critical parameters:

Electrical Compatibility Criteria:

• FET Type: N-Channel topology must be maintained
• Package: 8-SOIC (0.154", 3.90mm Width) surface mount configuration
• Maximum Gate Voltage (Vgs): ±12V compatibility
• Operating Temperature Range: -55°C to 150°C (TJ)

Performance Matching Criteria:

• Drain-to-Source Voltage (Vdss): Substitute must equal or exceed 12V
• Continuous Drain Current (Id): Substitute must support application requirements
• On-State Resistance (Rds On): Low resistance for efficient switching
• Gate Charge (Qg): Affects switching speed and drive requirements
• Input Capacitance (Ciss): Influences gate drive circuit design

The identified substitutes meet these criteria while accommodating variations in voltage ratings and current handling within acceptable design margins.

Parameter Comparison

Engineering Selection Recommendations

DMN2009LSS-13 (Diodes Incorporated): This substitute provides a higher voltage rating (20V Vdss) with comparable on-state resistance (8 mOhm @ 12A, 10V). The device maintains the same 8-SOIC package footprint and operating temperature range. Product status is active with ROHS3 compliance and REACH unaffected designation. Continuous drain current is rated at 12A, which is lower than the original 15A specification. This device is suitable for applications where the 12V rating of the original part is insufficient or where higher voltage margin is required.

STS6NF20V (STMicroelectronics): This substitute, part of the STripFET™ II series, offers a 20V Vdss rating in the same 8-SOIC package. The device features significantly lower input capacitance (460 pF @ 15V) and lower gate charge (11.5 nC @ 4.5V) compared to the original part, resulting in faster switching characteristics. Continuous drain current is rated at 6A, substantially lower than the original 15A specification. Product status is active with ROHS3 compliance. This device is appropriate for applications prioritizing switching speed and gate drive efficiency over high current capacity.

Compliance and Regulatory Status: Both substitute parts maintain MSL Level 1 (Unlimited) moisture sensitivity, REACH unaffected status, and ECCN EAR99 classification, consistent with the original part. Both are ROHS3 compliant, supporting modern regulatory requirements.

Frequently Asked Questions (FAQ)

Q: Can the DMN2009LSS-13 directly replace the 62-0063PBF in all applications?

A: The DMN2009LSS-13 shares the same 8-SOIC package and on-state resistance characteristics. However, the continuous drain current rating is 12A versus 15A for the original part. Direct substitution is valid only if the application current requirement does not exceed 12A. The higher voltage rating (20V) provides additional design margin.

Q: What are the key differences between the two substitute options?

A: The DMN2009LSS-13 prioritizes current handling (12A) with comparable on-state resistance to the original part. The STS6NF20V prioritizes switching performance with significantly lower gate charge and input capacitance, but supports only 6A continuous drain current. Selection depends on whether the application is current-limited or switching-speed-limited.

Q: Are both substitute parts available in the same packaging as the original?

A: Yes. Both the DMN2009LSS-13 and STS6NF20V are supplied in 8-SOIC (0.154", 3.90mm Width) surface mount packages, identical to the 62-0063PBF. PCB footprints are compatible without modification.

Q: What is the significance of the higher Vdss rating in the substitute parts?

A: The substitute parts are rated for 20V Vdss compared to 12V for the original part. This higher voltage rating provides additional safety margin and allows operation in circuits with higher transient voltage spikes. The device will function correctly in 12V applications with improved reliability.

Q: How do gate charge differences affect circuit design?

A: The STS6NF20V has significantly lower gate charge (11.5 nC @ 4.5V) compared to the original part (40 nC @ 4.5V). Lower gate charge reduces switching losses and simplifies gate drive circuit requirements. The DMN2009LSS-13 has higher gate charge (58.3 nC @ 10V), requiring more robust gate drive capability.

Q: Are there any thermal considerations when substituting these parts?

A: All three devices support the same operating temperature range (-55°C to 150°C TJ) and have comparable power dissipation ratings (2-2.5W). Thermal performance depends on application current levels and PCB thermal design. The lower current rating of the STS6NF20V (6A) results in lower absolute power dissipation in current-limited applications.

Q: What compliance certifications apply to these substitute parts?

A: Both substitute parts are ROHS3 compliant and REACH unaffected. Moisture sensitivity level is MSL 1 (Unlimited) for all three devices. ECCN classification is EAR99 for all parts, consistent with the original component.