MOSFET P-Channel 5LP01SP Equivalent & Substitute Parts

Part Overview

The 5LP01SP is a P-Channel MOSFET manufactured by onsemi, rated for 50V drain-to-source voltage with 70mA continuous drain current and 250mW power dissipation. This device features a Through Hole 3-SPA package configuration and is designed for general-purpose switching applications requiring moderate current handling.

The 5LP01SP is classified as an Obsolete product. Identifying equivalent and substitute components is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production or maintenance requirements for systems utilizing this device.

Substiute Parts

5LP01SP

onsemiIn Stock: 9105LP01SP Datasheet

Current PartRFQ

VP2106N3-G

Microchip TechnologyIn Stock: 5058VP2106N3-G Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the 5LP01SP is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

• FET Type: P-Channel topology must be maintained
• Drain to Source Voltage (Vdss): Substitute must equal or exceed 50V rating
• Continuous Drain Current (Id): Substitute must equal or exceed 70mA at 25°C
• Power Dissipation: Substitute must equal or exceed 250mW
• Gate Voltage (Vgs): Substitute must accommodate ±10V maximum gate voltage
• On-State Resistance (Rds On): Substitute performance must be compatible with circuit requirements

Mechanical Compatibility Criteria:

• Mounting Type: Through Hole configuration required
• Package compatibility: Physical dimensions and pin configuration must accommodate existing PCB layouts or allow for adapter solutions

The VP2106N3-G meets these substitution criteria through superior electrical ratings (60V Vdss, 250mA Id, 1W power dissipation) while maintaining Through Hole mounting. The substitute provides enhanced performance headroom across all critical parameters.

Parameter Comparison

Engineering Selection Recommendations

Product Status Consideration: The 5LP01SP is classified as Obsolete. The VP2106N3-G is classified as Active, ensuring continued availability and manufacturing support from Microchip Technology.

Compliance and Certification: Both devices are REACH Unaffected and classified under ECCN EAR99. The VP2106N3-G carries RoHS3 Compliance certification, providing additional environmental and regulatory alignment for modern manufacturing standards. Both devices have Moisture Sensitivity Level 1 (Unlimited), indicating no moisture-related handling restrictions.

Electrical Performance: The VP2106N3-G provides superior electrical performance across all measured parameters: higher Vdss (60V vs. 50V), significantly higher continuous drain current (250mA vs. 70mA), and four times greater power dissipation capability (1W vs. 250mW). These characteristics ensure the substitute operates with greater performance margin in existing circuit applications.

Package Consideration: The 5LP01SP uses SC-72 package while the VP2106N3-G uses TO-92-3 (TO-226AA) package. Both are Through Hole configurations. Physical pin spacing and lead geometry differ between these packages; PCB layout modification or mechanical adapter solutions may be required for direct substitution.

Frequently Asked Questions (FAQ)

Q: Can the VP2106N3-G directly replace the 5LP01SP without circuit modification?

A: The VP2106N3-G is electrically compatible as a substitute based on FET type, voltage ratings, and current capacity. However, package differences (SC-72 vs. TO-92-3) require PCB layout evaluation. Pin spacing and lead geometry differ between these Through Hole packages. Direct socket replacement is not possible without mechanical adaptation or PCB redesign.

Q: What are the key electrical advantages of the VP2106N3-G substitute?

A: The VP2106N3-G provides three primary electrical advantages: (1) higher Vdss rating (60V vs. 50V), providing 20% additional voltage margin; (2) higher continuous drain current (250mA vs. 70mA), providing 3.6× current capacity; (3) higher power dissipation (1W vs. 250mW), providing 4× thermal headroom. These characteristics reduce operating stress on the substitute device.

Q: Are there compliance or regulatory differences between these devices?

A: Both devices are REACH Unaffected and EAR99 classified. The VP2106N3-G carries RoHS3 Compliance certification, while the 5LP01SP does not specify RoHS status. For applications requiring RoHS compliance, the VP2106N3-G meets this requirement. Both devices have identical Moisture Sensitivity Level 1 (Unlimited).

Q: Why is the 5LP01SP classified as Obsolete?

A: The 5LP01SP is an obsolete product from onsemi. The VP2106N3-G is an active product from Microchip Technology, ensuring ongoing manufacturing support, availability, and technical documentation. Substitution to an active product supports long-term supply chain stability.

Q: What is the maximum gate voltage difference between these devices?

A: The 5LP01SP has a maximum gate voltage (Vgs) of ±10V, while the VP2106N3-G supports ±20V. The substitute accommodates a wider gate voltage range, providing additional design flexibility for gate drive circuits.

Q: How do the on-state resistance characteristics compare?

A: The 5LP01SP specifies Rds On of 23Ohm at 40mA and 4V gate voltage. The VP2106N3-G specifies Rds On of 12Ohm at 500mA and 10V gate voltage. The substitute exhibits lower on-state resistance at higher current levels, resulting in reduced conduction losses and improved thermal performance in switching applications.