5LP01M-TL-E MOSFET P-Channel Equivalent & Substitute Parts

Part Overview

The 5LP01M-TL-E is a P-Channel MOSFET manufactured by onsemi, rated for 50V drain-to-source voltage with 70mA continuous drain current and 150mW power dissipation in a surface mount MCP package. This device is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement continuity. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, and thermal characteristics while accommodating available packaging options.

Substiute Parts

5LP01M-TL-E
onsemiIn Stock: 10605LP01M-TL-E Datasheet
5LP01M-TL-E
Current Part
BSS84AKW,115
Nexperia USA Inc.In Stock: 3578BSS84AKW,115 Datasheet
BSS84AKW,115
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Key Parameters

Parameter Value Unit
FET Type P-Channel
Drain to Source Voltage (Vdss) 50 V
Current - Continuous Drain (Id) @ 25°C 70 mA
Power Dissipation (Max) 150 mW (Ta)
Rds On (Max) @ Id, Vgs 23 Ohm @ 40mA, 4V
Gate Charge (Qg) (Max) @ Vgs 1.4 nC @ 10V
Vgs (Max) ±10 V
Input Capacitance (Ciss) (Max) @ Vds 7.4 pF @ 10V
Operating Temperature (TJ) 150 °C
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the 5LP01M-TL-E is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • FET Type: P-Channel topology required
  • Drain to Source Voltage (Vdss): Minimum 50V rating
  • Current - Continuous Drain (Id): Minimum 70mA at 25°C
  • Power Dissipation: Minimum 150mW at ambient temperature
  • Package / Case: SC-70 or SOT-323 surface mount packages
  • Mounting Type: Surface mount configuration

Secondary Compatibility Parameters:

  • Rds On (Max): Lower or equivalent on-resistance values acceptable
  • Gate Charge (Qg): Lower values acceptable for improved switching performance
  • Vgs (Max): Equal or greater gate voltage rating acceptable
  • Input Capacitance (Ciss): Lower values acceptable
  • Operating Temperature: Equal or greater maximum junction temperature acceptable
  • Moisture Sensitivity Level: MSL 1 or equivalent

The BSS84AKW,115 manufactured by Nexperia USA Inc. meets all primary substitution criteria and exceeds secondary parameters, qualifying as a direct functional equivalent.

Parameter Comparison

Parameter 5LP01M-TL-E (onsemi) BSS84AKW,115 (Nexperia) Unit
FET Type P-Channel P-Channel
Drain to Source Voltage (Vdss) 50 50 V
Current - Continuous Drain (Id) @ 25°C 70 150 mA
Power Dissipation (Max) @ Ta 150 260 mW
Rds On (Max) @ Id, Vgs 23 @ 40mA, 4V 7.5 @ 100mA, 10V Ohm
Gate Charge (Qg) (Max) @ Vgs 1.4 @ 10V 0.35 @ 5V nC
Vgs (Max) ±10 ±20 V
Input Capacitance (Ciss) (Max) @ Vds 7.4 @ 10V 36 @ 25V pF
Operating Temperature (TJ) 150 150 °C
Mounting Type Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

The BSS84AKW,115 is a qualified substitute for the obsolete 5LP01M-TL-E based on the following factors:

Electrical Compatibility: The substitute part maintains the 50V Vdss rating and exceeds the 70mA continuous drain current requirement with a 150mA rating. Power dissipation capability is increased to 260mW at ambient temperature, providing additional thermal margin. On-resistance is reduced to 7.5Ohm, improving efficiency in switching applications.

Package Compatibility: Both devices utilize SC-70 and SOT-323 surface mount packages, ensuring mechanical and thermal interface compatibility with existing PCB layouts and thermal management solutions.

Product Status and Compliance: The BSS84AKW,115 is classified as active product status, ensuring long-term availability and supply chain continuity. The device is AEC-Q101 qualified and ROHS3 compliant, meeting automotive and environmental regulatory requirements. Both parts carry REACH Unaffected status and EAR99 ECCN classification.

Thermal and Operational Range: The substitute part supports an extended operating temperature range of -55°C to 150°C junction temperature, compared to the main part's 150°C maximum. This provides improved performance margin across industrial and automotive temperature profiles.

Frequently Asked Questions (FAQ)

Q: Can the BSS84AKW,115 be used as a direct replacement for the 5LP01M-TL-E in existing designs?

A: Yes. Both devices are P-Channel MOSFETs with identical 50V Vdss ratings, compatible SC-70/SOT-323 packages, and surface mount configurations. The substitute part exceeds the original device specifications in continuous drain current (150mA vs. 70mA) and power dissipation (260mW vs. 150mW), making it functionally compatible for the same application space.

Q: What are the key electrical differences between these parts?

A: The BSS84AKW,115 provides superior performance characteristics: 2.14× higher continuous drain current, 1.73× greater power dissipation capability, 69% lower on-resistance, and 75% lower gate charge. These improvements result in reduced switching losses and improved thermal performance in the same package footprint.

Q: Are there package considerations when substituting these parts?

A: Both parts use identical SC-70 and SOT-323 surface mount packages. No PCB layout modifications are required. Thermal interface characteristics remain compatible, though the substitute part's improved power dissipation capability may reduce thermal management requirements in some applications.

Q: What compliance certifications apply to the substitute part?

A: The BSS84AKW,115 is AEC-Q101 qualified for automotive applications, ROHS3 compliant for environmental regulations, and carries REACH Unaffected status. Both parts share EAR99 ECCN classification and MSL 1 moisture sensitivity rating.

Q: Is the extended temperature range of the substitute part significant?

A: The BSS84AKW,115 supports -55°C to 150°C junction temperature operation, compared to the 5LP01M-TL-E's 150°C maximum. This extended lower temperature limit provides improved performance margin in industrial and automotive applications operating below 0°C ambient conditions.

Q: How do gate charge specifications affect circuit design?

A: The substitute part's 0.35nC gate charge at 5V is significantly lower than the original 1.4nC at 10V. Lower gate charge reduces driver circuit power consumption and enables faster switching transitions, benefiting high-frequency switching applications and reducing electromagnetic interference.

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