5LN01SS-TL-E Equivalent & Substitute Parts

Part Overview

The 5LN01SS-TL-E is an N-Channel MOSFET manufactured by onsemi, rated for 50V drain-to-source voltage with 100mA continuous drain current and 150mW power dissipation in a 3-SSFP surface mount package. This device is classified as obsolete, necessitating identification of active substitute components for new designs and ongoing production requirements. Equivalent parts must maintain functional compatibility across voltage ratings, current handling, and thermal characteristics while accommodating package transitions to currently available surface mount technologies.

Substiute Parts

5LN01SS-TL-E
onsemiIn Stock: 37135LN01SS-TL-E Datasheet
5LN01SS-TL-E
Current Part
2N7002KW
onsemiIn Stock: 1229472N7002KW Datasheet
2N7002KW
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2N7002T
onsemiIn Stock: 7267692N7002T Datasheet
2N7002T
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Key Parameters

Parameter Value Unit
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V
Continuous Drain Current (Id) @ 25°C 100 mA
Power Dissipation (Max) 150 mW
Rds On (Max) @ 50mA, 4V 7.8 Ohm
Gate Charge (Qg) @ 10V 1.57 nC
Input Capacitance (Ciss) @ 10V 6.6 pF
Vgs (Max) ±10 V
Operating Temperature (TJ) 150 °C
Mounting Type Surface Mount
Package / Case SC-81, 3-SSFP
Product Status Obsolete

Substitute Part Grouping Explanation

Substitution of the 5LN01SS-TL-E is determined by the following critical parameters:

Voltage Rating Compatibility: Substitute parts must have a Vdss rating equal to or greater than 50V to maintain voltage margin in the application circuit.

Current Handling: Substitute parts must support continuous drain current (Id) at or above 100mA to ensure adequate current delivery without thermal stress.

Power Dissipation: Substitute parts must accommodate the thermal load, with power dissipation ratings at or above 150mW under specified operating conditions.

Gate Drive Voltage: Substitute parts must operate within compatible gate voltage ranges (Vgs) to ensure proper switching control with existing drive circuitry.

Channel Type and Technology: All substitutes must be N-Channel MOSFETs using metal oxide technology to maintain functional equivalence.

Thermal Performance: Operating temperature ratings must support the maximum junction temperature of 150°C or higher.

Compliance and Status: Active product status and current compliance certifications (RoHS3, REACH) are required for new production applications.

The two identified substitutes—2N7002T and 2N7002KW—both exceed the minimum voltage and current requirements while offering improved specifications and active product status. Package transitions from 3-SSFP to SOT-323 (SC-70) and SC-89-3 (SOT-490) represent industry-standard surface mount alternatives.

Parameter Comparison

Parameter 5LN01SS-TL-E 2N7002T 2N7002KW Unit
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 60 60 V
Continuous Drain Current (Id) @ 25°C 100 115 310 mA
Power Dissipation (Max) 150 200 350 mW
Rds On (Max) 7.8 @ 50mA, 4V 7.5 @ 50mA, 5V 1.6 @ 500mA, 10V Ohm
Input Capacitance (Ciss) (Max) 6.6 @ 10V 50 @ 25V 50 @ 25V pF
Vgs (Max) ±10 ±20 ±20 V
Operating Temperature (TJ) 150 150 150 °C
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SC-81, 3-SSFP SC-89, SOT-490 SC-70, SOT-323
Product Status Obsolete Active Active
RoHS Status Not specified ROHS3 Compliant ROHS3 Compliant
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

2N7002T Selection Criteria:

The 2N7002T provides direct functional substitution for the 5LN01SS-TL-E with minimal design impact. This device maintains equivalent drain current (115mA versus 100mA), exceeds voltage rating (60V versus 50V), and offers comparable Rds On characteristics (7.5Ohm @ 50mA, 5V versus 7.8Ohm @ 50mA, 4V). The 2N7002T is classified as active product status with ROHS3 compliance, ensuring long-term availability and regulatory alignment. The SC-89-3 package (SOT-490) represents a standard surface mount alternative requiring PCB layout modification from the original 3-SSFP footprint. Gate voltage rating expansion to ±20V provides additional design margin.

2N7002KW Selection Criteria:

The 2N7002KW offers enhanced performance specifications with significantly higher continuous drain current (310mA versus 100mA) and power dissipation (350mW versus 150mW). This device is suitable for applications requiring current headroom or thermal margin beyond the original design specification. The SC-70 package (SOT-323) is a widely adopted industry standard with extensive PCB design tool support. The 2N7002KW maintains active product status and ROHS3 compliance. Rds On performance is superior (1.6Ohm @ 500mA, 10V), reducing conduction losses in high-current applications.

Compliance Basis:

Both substitute parts satisfy REACH and ECCN requirements identical to the original device. ROHS3 compliance of the substitute parts ensures compatibility with current manufacturing and environmental regulations. Active product status guarantees continued supply chain availability and technical support.

Frequently Asked Questions (FAQ)

Q: Can the 2N7002T directly replace the 5LN01SS-TL-E without circuit modification?

A: The 2N7002T provides electrical substitution with equivalent performance across voltage, current, and thermal parameters. However, package transition from 3-SSFP to SC-89-3 (SOT-490) requires PCB footprint redesign. Gate voltage compatibility (±20V on 2N7002T versus ±10V on 5LN01SS-TL-E) is not a limitation; the higher rating accommodates the original drive voltage range.

Q: What is the primary difference between the 2N7002T and 2N7002KW substitutes?

A: The 2N7002KW provides higher current capacity (310mA versus 115mA) and power dissipation (350mW versus 200mW), making it suitable for applications with greater thermal or current demands. The 2N7002T maintains closer performance parity to the original device. Package differences (SC-89-3 versus SC-70) reflect different PCB integration requirements.

Q: Are there thermal considerations when substituting to the 2N7002 series?

A: Both 2N7002T and 2N7002KW maintain the same maximum junction temperature (150°C) as the original device. The 2N7002KW offers higher power dissipation capacity (350mW), reducing thermal stress in high-current applications. PCB thermal design should account for package geometry differences between 3-SSFP and the substitute packages.

Q: Does the input capacitance increase affect circuit performance?

A: Input capacitance (Ciss) increases from 6.6pF to 50pF on both substitutes. This affects gate drive requirements and switching speed. Applications with high-frequency switching or current-limited gate drivers require evaluation of gate charge (Qg) specifications and drive circuit capability.

Q: What packaging considerations apply to PCB redesign?

A: The original 3-SSFP package transitions to either SC-89-3 (SOT-490) for the 2N7002T or SC-70 (SOT-323) for the 2N7002KW. Both are standard surface mount packages with established design tool support. PCB layout, thermal vias, and trace routing must be adapted to the new package geometry and pin configuration.

Q: Are the substitute parts available in equivalent packaging options?

A: The 2N7002T is supplied in Cut Tape (CT) and Digi-Reel® packaging. The 2N7002KW is supplied in Cut Tape (CT) and Digi-Reel® packaging. Both offer high inventory availability (726,730 pcs and 122,869 pcs respectively), supporting production requirements.

Q: How do gate threshold voltage differences impact circuit design?

A: The 5LN01SS-TL-E does not specify Vgs(th) in the provided data. The 2N7002T specifies 2V @ 250µA and the 2N7002KW specifies 2.1V @ 250µA. These values are within typical N-Channel MOSFET ranges and do not present substitution barriers for standard gate drive circuits.

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