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5LN01SP-AC N-Channel MOSFET Equivalent & Substitute Parts
Part Overview
The 5LN01SP-AC is an N-Channel MOSFET manufactured by onsemi, rated for 50V drain-to-source voltage with 100mA continuous drain current and 250mW power dissipation. This device is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement continuity. The part features a through-hole 3-SPA package configuration suitable for discrete component applications requiring moderate voltage and current handling.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | — |
| Drain to Source Voltage (Vdss) | 50 | V |
| Current - Continuous Drain (Id) @ 25°C | 100 | mA |
| Rds On (Max) @ Id, Vgs | 7.8 @ 50mA, 4V | Ohm |
| Power Dissipation (Max) | 250 | mW |
| Operating Temperature (TJ) | 150 | °C |
| Mounting Type | Through Hole | — |
| Package / Case | SC-72 | — |
| Product Status | Obsolete | — |
Substitute Part Grouping Explanation
Substitution of the 5LN01SP-AC is determined by electrical and mechanical compatibility across the following critical parameters:
Electrical Compatibility Criteria:
- FET Type: N-Channel topology must be maintained
- Technology: MOSFET (Metal Oxide) construction required
- Drain to Source Voltage (Vdss): Substitute must equal or exceed 50V rating
- Continuous Drain Current (Id): Substitute must equal or exceed 100mA capability
- Power Dissipation: Substitute must equal or exceed 250mW thermal handling
- On-State Resistance (Rds On): Substitute performance must be comparable or superior
Mechanical Compatibility Criteria:
- Mounting Type: Through-hole configuration required
- Package Configuration: Physical footprint must accommodate circuit board layout
The VN2222LL-G manufactured by Microchip Technology satisfies these substitution requirements through superior electrical ratings (60V Vdss, 230mA Id, 400mW Ta power dissipation) while maintaining N-Channel MOSFET topology and through-hole mounting. Package differences (TO-92-3 versus SC-72) require physical layout verification but do not preclude functional substitution.
Parameter Comparison
| Parameter | 5LN01SP-AC (onsemi) | VN2222LL-G (Microchip) | Compatibility |
|---|---|---|---|
| FET Type | N-Channel | N-Channel | Match |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | Match |
| Drain to Source Voltage (Vdss) | 50 V | 60 V | Substitute Exceeds |
| Current - Continuous Drain (Id) @ 25°C | 100 mA | 230 mA | Substitute Exceeds |
| Rds On (Max) | 7.8 Ohm @ 50mA, 4V | 7.5 Ohm @ 500mA, 10V | Comparable |
| Power Dissipation (Max) | 250 mW (Ta) | 400 mW (Ta), 1W (Tc) | Substitute Exceeds |
| Operating Temperature (TJ) | 150 °C | −55 to 150 °C | Substitute Exceeds |
| Mounting Type | Through Hole | Through Hole | Match |
| Package / Case | SC-72 | TO-92-3 (TO-226AA) | Different |
| Product Status | Obsolete | Active | Substitute Active |
Engineering Selection Recommendations
Primary Substitute: VN2222LL-G
The VN2222LL-G is the qualified substitute for the obsolete 5LN01SP-AC based on the following engineering factors:
-
Electrical Superiority: The VN2222LL-G exceeds all critical electrical parameters of the 5LN01SP-AC. The 60V Vdss rating provides 20% voltage margin above the original 50V specification. The 230mA continuous drain current rating provides 130% current capacity above the original 100mA specification. Power dissipation capability of 400mW (Ta) and 1W (Tc) exceeds the original 250mW rating.
-
Technology Alignment: Both devices employ N-Channel MOSFET (Metal Oxide) technology with comparable on-state resistance characteristics, ensuring functional equivalence in switching and linear applications.
-
Product Status: The VN2222LL-G maintains active product status with established supply chain availability (2499 pieces in stock), addressing the obsolescence of the 5LN01SP-AC.
-
Compliance and Certification: The VN2222LL-G carries ROHS3 compliance and REACH Unaffected status, meeting current regulatory requirements. Both devices are classified as EAR99 for export control purposes.
-
Package Consideration: The VN2222LL-G uses TO-92-3 (TO-226AA) package versus the SC-72 package of the original part. Physical pin configuration and lead spacing differ and require circuit board layout modification. Pin-to-pin functional mapping must be verified during design transition.
Frequently Asked Questions (FAQ)
Q: Can the VN2222LL-G directly replace the 5LN01SP-AC without circuit board modifications?
A: Electrical substitution is valid; however, physical package differences (TO-92-3 versus SC-72) require circuit board layout changes. Pin assignments must be verified and PCB footprints redesigned accordingly.
Q: What are the key electrical advantages of the VN2222LL-G substitute?
A: The VN2222LL-G provides higher voltage rating (60V versus 50V), higher current capacity (230mA versus 100mA), and greater power dissipation capability (400mW Ta, 1W Tc versus 250mW Ta). These parameters provide design margin for thermal and electrical stress conditions.
Q: Are there compatibility concerns with gate drive voltage?
A: The VN2222LL-G accepts gate-source voltage (Vgs) up to ±30V compared to ±10V for the 5LN01SP-AC. This provides broader gate drive compatibility. The VN2222LL-G gate threshold voltage (Vgs(th)) is 2.5V @ 1mA versus 1.3V @ 100µA for the original part, requiring verification of gate drive circuit performance at the intended operating point.
Q: Is the VN2222LL-G suitable for high-temperature applications?
A: The VN2222LL-G operates across −55°C to 150°C junction temperature range, matching the 150°C maximum of the 5LN01SP-AC and providing extended low-temperature capability for −55°C operation.
Q: What compliance certifications apply to the VN2222LL-G?
A: The VN2222LL-G is ROHS3 compliant and REACH Unaffected. Both devices carry EAR99 export classification and unlimited moisture sensitivity level (MSL 1).
Q: How do the on-state resistance characteristics compare?
A: The 5LN01SP-AC specifies 7.8 Ohm Rds On @ 50mA, 4V. The VN2222LL-G specifies 7.5 Ohm Rds On @ 500mA, 10V. On-state resistance is comparable at rated conditions, with the VN2222LL-G demonstrating slightly lower resistance at higher current levels.
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