50C02MH-TL-E Equivalent & Substitute Parts

Part Overview

The 50C02MH-TL-E is a Surface Mount NPN Bipolar Junction Transistor (BJT) manufactured by onsemi, rated for 50 V collector-emitter breakdown voltage and 500 mA maximum collector current. This device is classified as obsolete, indicating discontinuation from active production. Identifying equivalent substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this transistor topology.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Current - Collector (Ic) (Max)	500	mA
Voltage - Collector Emitter Breakdown (Max)	50	V
Vce Saturation (Max) @ Ib, Ic	100 mV @ 10 mA, 100 mA	—
Current - Collector Cutoff (Max)	100	nA
DC Current Gain (hFE) (Min) @ Ic, Vce	300 @ 10 mA, 2 V	—
Power - Max	600	mW
Frequency - Transition	500	MHz
Operating Temperature (TJ)	150	°C
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—
REACH Status	REACH Unaffected	—

Substitute Part Grouping Explanation

Substitution of the 50C02MH-TL-E is determined by electrical and mechanical parameter equivalence within the NPN BJT category. The critical parameters governing substitution are:

Transistor Type: NPN topology
Current Rating: 500 mA maximum collector current
Voltage Rating: 50 V collector-emitter breakdown voltage
Saturation Characteristics: 100 mV @ 10 mA, 100 mA
Current Gain: Minimum 300 hFE @ 10 mA, 2 V
Frequency Response: 500 MHz transition frequency
Power Dissipation: Minimum 600 mW capability
Operating Temperature: 150°C maximum junction temperature
Surface Mount Configuration: Required for PCB integration
Regulatory Compliance: ROHS3 and REACH requirements

The 50C02CH-TL-E meets all specified electrical parameters and maintains regulatory compliance. Differences in packaging format and power rating do not preclude substitution when electrical specifications are satisfied.

Parameter Comparison

Parameter	50C02MH-TL-E	50C02CH-TL-E	Unit
Transistor Type	NPN	NPN	—
Current - Collector (Ic) (Max)	500	500	mA
Voltage - Collector Emitter Breakdown (Max)	50	50	V
Vce Saturation (Max) @ Ib, Ic	100 mV @ 10 mA, 100 mA	100 mV @ 10 mA, 100 mA	—
Current - Collector Cutoff (Max)	100	100	nA
DC Current Gain (hFE) (Min) @ Ic, Vce	300 @ 10 mA, 2 V	300 @ 10 mA, 2 V	—
Power - Max	600	700	mW
Frequency - Transition	500	500	MHz
Operating Temperature (TJ)	150	150	°C
Mounting Type	Surface Mount	Surface Mount	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	—
REACH Status	REACH Unaffected	REACH Unaffected	—
Product Status	Obsolete	Active	—

Engineering Selection Recommendations

The 50C02CH-TL-E is a direct electrical equivalent to the 50C02MH-TL-E. Both devices share identical electrical specifications across all critical parameters: collector current, breakdown voltage, saturation characteristics, current gain, transition frequency, and operating temperature range.

The 50C02CH-TL-E holds Active product status, ensuring continued availability and supply chain support. Both parts maintain ROHS3 compliance and REACH unaffected status, satisfying regulatory requirements for current manufacturing standards.

The 50C02CH-TL-E provides 700 mW power dissipation capability, exceeding the 600 mW specification of the 50C02MH-TL-E. This enhanced power rating provides additional thermal margin without compromising electrical performance.

Package format differences (3-MCPH versus 3-CPH) require PCB layout verification to confirm mechanical compatibility with existing footprints. Both packages are Surface Mount configurations suitable for automated assembly processes.

Frequently Asked Questions (FAQ)

Q: Can the 50C02CH-TL-E directly replace the 50C02MH-TL-E in existing designs?

A: Yes. The 50C02CH-TL-E meets all electrical specifications of the 50C02MH-TL-E, including collector current, breakdown voltage, saturation characteristics, current gain, and frequency response. PCB footprint compatibility must be verified due to package format differences.

Q: What is the significance of the Active product status for the 50C02CH-TL-E?

A: Active product status indicates ongoing manufacturing and distribution. This ensures long-term supply availability and eliminates obsolescence risk associated with the discontinued 50C02MH-TL-E.

Q: How do the power ratings differ between these parts?

A: The 50C02MH-TL-E is rated for 600 mW maximum power dissipation. The 50C02CH-TL-E is rated for 700 mW. The higher rating of the substitute part provides additional thermal headroom and does not restrict application compatibility.

Q: Are there regulatory compliance differences between these transistors?

A: No. Both the 50C02MH-TL-E and 50C02CH-TL-E maintain ROHS3 compliance and REACH unaffected status. Regulatory requirements are satisfied by either part.

Q: What package considerations apply to substitution?

A: The 50C02MH-TL-E uses 3-MCPH packaging. The 50C02CH-TL-E uses 3-CPH packaging (TO-236-3, SC-59, SOT-23-3). Physical dimensions and lead configurations differ. PCB footprint and assembly process compatibility must be confirmed before implementation.

Q: Do the DC current gain specifications match between these parts?

A: Yes. Both transistors specify a minimum DC current gain (hFE) of 300 at 10 mA collector current and 2 V collector-emitter voltage. Amplification characteristics are equivalent.

Q: Is the transition frequency identical for both parts?

A: Yes. Both the 50C02MH-TL-E and 50C02CH-TL-E operate at 500 MHz transition frequency. High-frequency performance is equivalent.

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