Equivalent & Substitute Parts for 4N35 Optoisolator

Part Overview

The 4N35 is a single-channel optoisolator transistor with base output manufactured by onsemi, rated for 5300Vrms isolation voltage. This component is classified as obsolete, making equivalent and substitute parts necessary for new designs and ongoing production requirements. The 4N35 operates with a 100% minimum current transfer ratio at 10mA input and features 2µs turn-on and turn-off times, suitable for DC input applications requiring galvanic isolation in 6-DIP through-hole packages.

Key Parameters

Parameter	Value
Manufacturer Part Number	4N35
Manufacturer	onsemi
Category	Optoisolators
Number of Channels	1
Voltage - Isolation	5300Vrms
Current Transfer Ratio (Min)	100% @ 10mA
Turn On / Turn Off Time (Typ)	2µs, 2µs
Output Type	Transistor with Base
Voltage - Output (Max)	30V
Voltage - Forward (Vf) (Typ)	1.18V
Current - DC Forward (If) (Max)	100 mA
Vce Saturation (Max)	300mV
Operating Temperature	-55°C ~ 100°C
Package / Case	6-DIP (0.300", 7.62mm)
Product Status	Obsolete

Substitute Part Grouping Explanation

Substitution for the 4N35 is determined by the following critical parameters:

Primary Substitution Criteria:

Single-channel optoisolator configuration
Transistor output with base connection
6-DIP through-hole package (0.300", 7.62mm)
DC input type
Operating temperature range compatibility
Isolation voltage rating (minimum acceptable level depends on application requirements)
Current transfer ratio performance at specified input current
Maximum output voltage capability
Vce saturation characteristics

Substitute Categories:

Direct Manufacturer Equivalents (onsemi): 4N35M represents the active production equivalent with reduced isolation voltage (4170Vrms) but maintains core electrical characteristics and identical package footprint.

Similar Performance Alternatives: H11AG1M, H11D3M, MCT5210M, and MOC8204M provide functional substitution with varying isolation voltages (4170Vrms), current transfer ratios, and output voltage ratings. These parts maintain the 6-DIP package and transistor-with-base output configuration.

Broadcom Limited Variants: 4N35-000E, 4N35-060E, and 4N35-W00E are Broadcom-manufactured variants of the 4N35 base product with 3550Vrms isolation voltage and active product status. The 4N35-W00E uses a 0.400" (10.16mm) package spacing variant.

Parameter Comparison

Parameter	4N35	4N35M	H11AG1M	H11D3M	MCT5210M	MOC8204M	4N35-000E	4N35-060E
Voltage - Isolation	5300Vrms	4170Vrms	4170Vrms	4170Vrms	4170Vrms	4170Vrms	3550Vrms	3550Vrms
Current Transfer Ratio (Min)	100% @ 10mA	100% @ 10mA	100% @ 1mA	20% @ 10mA	70% @ 3mA	20% @ 10mA	100% @ 10mA	100% @ 10mA
Turn On / Turn Off Time (Typ)	2µs, 2µs	2µs, 2µs	5µs, 5µs	5µs, 5µs	10µs, 400ns	5µs, 5µs	—	—
Voltage - Output (Max)	30V	30V	30V	200V	30V	400V	30V	30V
Current - Output / Channel	—	—	50mA	100mA	150mA	100mA	100mA	100mA
Voltage - Forward (Vf) (Typ)	1.18V	1.18V	1.25V	1.15V	1.25V	1.15V	1.2V	1.2V
Current - DC Forward (If) (Max)	100 mA	60 mA	50 mA	80 mA	50 mA	80 mA	60 mA	60 mA
Vce Saturation (Max)	300mV	300mV	400mV	400mV	400mV	400mV	300mV	300mV
Operating Temperature	-55°C ~ 100°C	-40°C ~ 100°C	-40°C ~ 100°C	-40°C ~ 100°C	-40°C ~ 100°C	-40°C ~ 100°C	-55°C ~ 100°C	-55°C ~ 100°C
Package / Case	6-DIP (0.300", 7.62mm)	6-DIP (0.300", 7.62mm)	6-DIP (0.300", 7.62mm)	6-DIP (0.300", 7.62mm)	6-DIP (0.300", 7.62mm)	6-DIP (0.300", 7.62mm)	6-DIP (0.300", 7.62mm)	6-DIP (0.300", 7.62mm)
Product Status	Obsolete	Active	Active	Active	Active	Active	Active	Active
RoHS Status	—	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

4N35M (onsemi): The primary active substitute from the original manufacturer. Maintains identical package and electrical interface with 4170Vrms isolation voltage. Suitable for applications where the reduced isolation rating is acceptable. ROHS3 compliant and actively produced.

4N35-000E and 4N35-060E (Broadcom Limited): Active variants with 3550Vrms isolation voltage and identical operating temperature range (-55°C ~ 100°C) to the original 4N35. Both maintain 100% current transfer ratio at 10mA and 300mV Vce saturation. ROHS3 compliant. Recommended for designs requiring extended temperature performance matching the original specification.

H11D3M (onsemi): Provides higher maximum output voltage (200V) and higher output current capability (100mA) with 4170Vrms isolation. Lower current transfer ratio (20% @ 10mA) requires circuit design consideration. ROHS3 compliant.

MOC8204M (onsemi): Offers highest maximum output voltage (400V) with 4170Vrms isolation and 100mA output current. Lower current transfer ratio (20% @ 10mA) and higher Vce saturation (400mV) require design verification. ROHS3 compliant.

H11AG1M (onsemi): Provides lowest input current requirement (100% CTR @ 1mA) with 4170Vrms isolation. Reduced output current capability (50mA) and higher Vce saturation (400mV). ROHS3 compliant.

MCT5210M (onsemi): Highest output current capability (150mA) with 4170Vrms isolation and 70% current transfer ratio at 3mA input. Slower turn-on time (10µs) with fast turn-off (400ns). ROHS3 compliant.

All substitute parts maintain 6-DIP through-hole package compatibility and DC input operation. Selection depends on isolation voltage requirements, output voltage/current specifications, and temperature range constraints of the target application.

Frequently Asked Questions (FAQ)

Q: Can 4N35M directly replace 4N35 in existing designs?

A: 4N35M maintains identical package footprint (6-DIP 0.300"), electrical interface, and core performance characteristics. The primary difference is reduced isolation voltage (4170Vrms vs. 5300Vrms). Direct replacement is possible if the application isolation requirement does not exceed 4170Vrms.

Q: What is the difference between onsemi and Broadcom variants?

A: Both manufacturers produce 4N35-based optoisolators. onsemi 4N35M is the active production equivalent. Broadcom 4N35-000E, 4N35-060E, and 4N35-W00E are Broadcom-manufactured variants. The 4N35-W00E uses a 0.400" (10.16mm) package spacing, which may not be compatible with 0.300" (7.62mm) footprints.

Q: Which substitute has the fastest switching speed?

A: The original 4N35 and 4N35M both specify 2µs turn-on and turn-off times. MCT5210M offers 400ns turn-off time but slower 10µs turn-on. Other substitutes specify 5µs switching times.

Q: Are all substitutes ROHS3 compliant?

A: All active substitute parts listed (4N35M, H11AG1M, H11D3M, MCT5210M, MOC8204M, 4N35-000E, 4N35-060E) are ROHS3 compliant. The original 4N35 does not specify RoHS status.

Q: What is the minimum isolation voltage among substitutes?

A: Broadcom variants (4N35-000E, 4N35-060E) provide 3550Vrms isolation. onsemi substitutes (4N35M, H11AG1M, H11D3M, MCT5210M, MOC8204M) provide 4170Vrms isolation. The original 4N35 specifies 5300Vrms.

Q: Can I use MOC8204M or H11D3M for higher output voltage applications?

A: MOC8204M supports 400V maximum output voltage and H11D3M supports 200V, compared to 30V for the original 4N35. Both require design verification due to lower current transfer ratios (20% @ 10mA) and higher Vce saturation (400mV).

Q: What is the difference between 4N35-000E and 4N35-060E?

A: Both are Broadcom variants with identical electrical specifications (3550Vrms isolation, 100% CTR @ 10mA, 300mV Vce saturation). Inventory levels differ (3942 pcs vs. 647 pcs). No functional difference is specified.

Q: Is the 4N35-W00E package compatible with standard 6-DIP footprints?

A: 4N35-W00E uses 0.400" (10.16mm) package spacing, while standard 4N35 and most substitutes use 0.300" (7.62mm) spacing. This variant is not compatible with standard 6-DIP footprints designed for 0.300" spacing.

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