4N26M-V Optoisolator Equivalent & Substitute Parts

Part Overview

The 4N26M-V is an optoisolator transistor with base output manufactured by Everlight Electronics Co Ltd. This component provides 5000Vrms isolation voltage in a single-channel configuration with transistor output and integrated base connection. The device is classified as Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating (MSL 1).

Substitute parts are identified when equivalent functional performance can be achieved within the allowed electrical and mechanical parameter ranges for optoisolator transistor applications. Substitution becomes necessary due to inventory availability, supply chain requirements, or design flexibility within specified tolerance windows.

Substiute Parts

4N26M-V
Everlight Electronics Co LtdIn Stock: 8504N26M-V Datasheet
4N26M-V
Current Part
4N26TVM
onsemiIn Stock: 18564N26TVM Datasheet
4N26TVM
Similar

Key Parameters

Parameter Value Unit
Isolation Voltage 5000 Vrms
Number of Channels 1
Output Type Transistor with Base
Current Transfer Ratio (Min) 20 % @ 10mA
Maximum Output Voltage 80 V
Forward Voltage (Typ) 1.2 V
Maximum Forward Current 60 mA
Vce Saturation (Max) 500 mV
Operating Temperature Range -55 to 110 °C
Package Type 6-DIP (0.400", 10.16mm)
Mounting Type Through Hole

Substitute Part Grouping Explanation

Substitution logic for the 4N26M-V is based on the following critical parameters that define functional equivalence:

Primary Substitution Criteria:

  • Package type: 6-DIP form factor with identical 0.400" (10.16mm) pitch
  • Output configuration: Transistor with base connection
  • Input type: DC
  • Single-channel isolation architecture
  • Current transfer ratio minimum: 20% @ 10mA
  • Vce saturation maximum: 500mV
  • RoHS3 compliance status

Secondary Compatibility Parameters:

  • Isolation voltage rating (minimum acceptable threshold)
  • Maximum output voltage capability
  • Forward voltage and current specifications
  • Operating temperature range overlap
  • Through-hole mounting compatibility

The 4N26TVM from onsemi meets the primary substitution criteria with identical package configuration, output type, and electrical performance thresholds. Differences in isolation voltage rating (4170Vrms vs 5000Vrms) and maximum output voltage (30V vs 80V) represent parameter derating and must be evaluated against specific application requirements.

Parameter Comparison

Parameter 4N26M-V (Everlight) 4N26TVM (onsemi) Unit
Manufacturer Everlight Electronics Co Ltd onsemi
Isolation Voltage 5000 4170 Vrms
Number of Channels 1 1
Output Type Transistor with Base Transistor with Base
Current Transfer Ratio (Min) 20 @ 10mA 20 @ 10mA %
Turn On Time (Typ) 3 2 µs
Turn Off Time (Typ) 3 2 µs
Maximum Output Voltage 80 30 V
Forward Voltage (Typ) 1.2 1.18 V
Maximum Forward Current 60 60 mA
Vce Saturation (Max) 500 500 mV
Operating Temperature Range -55 to 110 -40 to 100 °C
Package / Case 6-DIP (0.400", 10.16mm) 6-DIP (0.400", 10.16mm)
Mounting Type Through Hole Through Hole
RoHS3 Compliance Yes Yes
Product Status Active Active

Engineering Selection Recommendations

4N26M-V (Primary Component): The 4N26M-V remains the specified component for applications requiring the full 5000Vrms isolation voltage rating and 80V maximum output voltage capability. This part maintains Active product status with unlimited moisture sensitivity (MSL 1), indicating stable long-term availability and manufacturing consistency. RoHS3 compliance and EAR99 export classification are confirmed.

4N26TVM (Substitute Component): The 4N26TVM from onsemi is functionally equivalent for applications where the reduced isolation voltage (4170Vrms) and lower maximum output voltage (30V) are acceptable within design margins. This substitute maintains identical package configuration, output topology, and current transfer ratio specifications. Active product status and RoHS3 compliance are confirmed. The onsemi part demonstrates faster switching performance (2µs vs 3µs turn-on/off times) and operates within a narrower temperature range (-40 to 100°C vs -55 to 110°C).

Selection Basis:

  • Both parts are Active status with confirmed RoHS3 compliance
  • Identical 6-DIP package and through-hole mounting
  • Matching current transfer ratio and saturation voltage specifications
  • Substitution validity depends on application isolation voltage and output voltage requirements

Frequently Asked Questions (FAQ)

Q: Can the 4N26TVM directly replace the 4N26M-V in all applications?

A: Direct replacement is valid only when the application isolation voltage requirement does not exceed 4170Vrms and the maximum output voltage requirement does not exceed 30V. The 4N26TVM represents parameter derating in these two specifications. Verify application circuit requirements before substitution.

Q: What are the key differences between these two parts?

A: The primary differences are isolation voltage rating (5000Vrms vs 4170Vrms), maximum output voltage (80V vs 30V), switching speed (3µs vs 2µs), and operating temperature range (-55 to 110°C vs -40 to 100°C). All other electrical parameters including current transfer ratio, forward voltage, saturation voltage, and package configuration are identical.

Q: Are both parts available in the same package configuration?

A: Yes. Both the 4N26M-V and 4N26TVM use the 6-DIP (0.400", 10.16mm) through-hole package with identical pinout and mechanical dimensions. PCB layout compatibility is confirmed.

Q: What is the significance of the current transfer ratio specification?

A: The current transfer ratio of 20% @ 10mA (minimum) defines the optical coupling efficiency between the LED input and transistor output. Both parts meet this specification, ensuring equivalent signal transfer characteristics in isolation applications.

Q: Do both parts meet environmental and compliance requirements?

A: Both parts are RoHS3 compliant and carry EAR99 export classification. The 4N26M-V has MSL 1 (unlimited moisture sensitivity), while the 4N26TVM is listed as Not Applicable for MSL. Both are Active product status with confirmed manufacturing availability.

Q: What switching performance difference should be considered?

A: The 4N26TVM exhibits faster switching times (2µs turn-on/off vs 3µs for the 4N26M-V). In applications sensitive to switching delay, this represents an improvement. In applications with timing-critical constraints, verify that the faster response does not introduce signal integrity issues.

Q: How should temperature range differences be evaluated?

A: The 4N26M-V operates from -55 to 110°C, while the 4N26TVM operates from -40 to 100°C. Applications requiring operation below -40°C or above 100°C must use the 4N26M-V. For standard industrial temperature ranges (-40 to 85°C), both parts are suitable.

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