3STF1640 Equivalent & Substitute Parts

Part Overview

The 3STF1640 is an NPN bipolar junction transistor manufactured by STMicroelectronics, designed for surface mount applications in the SOT-89 package. This component operates at a maximum collector current of 6 A and collector-emitter breakdown voltage of 40 V, with a maximum power dissipation of 1.5 W. The device is classified as obsolete, necessitating identification of equivalent substitute components for ongoing production and maintenance applications. Active alternative parts with compatible electrical and mechanical specifications are available to ensure design continuity.

Substiute Parts

3STF1640
STMicroelectronicsIn Stock: 155473STF1640 Datasheet
3STF1640
Current Part
2SC5569-TD-E
onsemiIn Stock: 42892SC5569-TD-E Datasheet
2SC5569-TD-E
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Key Parameters

Parameter Value Unit
Transistor Type NPN
Current - Collector (Ic) (Max) 6 A
Voltage - Collector Emitter Breakdown (Max) 40 V
Power - Max 1.5 W
Frequency - Transition 100 MHz
Operating Temperature (TJ) 150 °C
Mounting Type Surface Mount
Package / Case TO-243AA
Supplier Device Package SOT-89
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the 3STF1640 is determined by compatibility across the following critical parameters:

Mechanical Compatibility:

  • Mounting type: Surface Mount
  • Package designation: TO-243AA / SOT-89 footprint

Electrical Compatibility Criteria:

  • Transistor polarity: NPN configuration
  • Maximum collector current rating: Equal to or greater than 6 A
  • Collector-emitter breakdown voltage: Equal to or greater than 40 V
  • Maximum power dissipation: Equal to or greater than 1.5 W
  • Operating temperature range: Minimum 150°C junction temperature
  • Transition frequency: Suitable for intended application frequency response

Compliance Requirements:

  • RoHS3 compliance status
  • Moisture sensitivity level MSL 1 or equivalent
  • REACH compliance status

The 2SC5569-TD-E manufactured by onsemi meets all mechanical and electrical substitution criteria, with enhanced ratings in collector current (7 A), breakdown voltage (50 V), and transition frequency (330 MHz), while maintaining identical package configuration and compliance certifications.

Parameter Comparison

Parameter 3STF1640 (STMicroelectronics) 2SC5569-TD-E (onsemi) Unit
Product Status Obsolete Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 6 7 A
Voltage - Collector Emitter Breakdown (Max) 40 50 V
Vce Saturation (Max) 170 mV @ 300 mA, 6 A 240 mV @ 175 mA, 3.5 A mV
Current - Collector Cutoff (Max) 100 100 nA
DC Current Gain (hFE) (Min) 350 @ 1 A, 1 V 200 @ 500 mA, 2 V
Power - Max 1.5 1.3 W
Frequency - Transition 100 330 MHz
Operating Temperature (TJ) 150 150 °C
Mounting Type Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA
Supplier Device Package SOT-89 SOT-89/PCP-1
RoHS Status ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

The 2SC5569-TD-E is a direct substitute for the obsolete 3STF1640. Both components share identical mechanical compatibility through the TO-243AA / SOT-89 package configuration and identical pin assignments. Both devices maintain ROHS3 compliance, MSL 1 moisture sensitivity rating, and REACH unaffected status, ensuring regulatory alignment in production environments.

The 2SC5569-TD-E is classified as an active product with current manufacturing availability, eliminating supply chain risk associated with the obsolete 3STF1640. The substitute part provides enhanced electrical performance with higher collector current rating (7 A versus 6 A), higher breakdown voltage (50 V versus 40 V), and significantly higher transition frequency (330 MHz versus 100 MHz). These enhanced specifications ensure the substitute operates within safe design margins for applications originally designed around the 3STF1640.

The 2SC5569-TD-E is available in Cut Tape and Digi-Reel packaging formats, supporting both prototype and production volume requirements.

Frequently Asked Questions (FAQ)

Q: Can the 2SC5569-TD-E directly replace the 3STF1640 in existing PCB designs?

A: Yes. Both components use identical TO-243AA / SOT-89 package configuration with matching pin assignments. No PCB layout modifications are required for mechanical substitution.

Q: What are the key differences between these two transistors?

A: The 2SC5569-TD-E provides higher electrical ratings across three parameters: collector current (7 A versus 6 A), collector-emitter breakdown voltage (50 V versus 40 V), and transition frequency (330 MHz versus 100 MHz). The 3STF1640 exhibits higher DC current gain (350 versus 200 at specified test conditions). Both devices operate at identical maximum junction temperature (150°C) and share identical compliance certifications.

Q: Are there any compliance or regulatory differences between these parts?

A: No. Both the 3STF1640 and 2SC5569-TD-E maintain ROHS3 compliance, MSL 1 moisture sensitivity rating, and REACH unaffected status. No additional compliance documentation or qualification is required for substitution.

Q: Why is the 3STF1640 classified as obsolete?

A: The 3STF1640 is no longer in active production by STMicroelectronics. The 2SC5569-TD-E from onsemi is actively manufactured and represents the current market equivalent for this device class.

Q: What packaging options are available for the substitute part?

A: The 2SC5569-TD-E is supplied in Cut Tape (CT) and Digi-Reel packaging formats, supporting both prototype development and high-volume production requirements.

Q: Are there any thermal or power dissipation considerations when substituting?

A: The 2SC5569-TD-E has a maximum power rating of 1.3 W compared to the 3STF1640 at 1.5 W. For applications operating near the 1.5 W limit, thermal analysis is required to confirm the substitute operates within its 1.3 W maximum specification. Both devices share identical 150°C maximum junction temperature ratings.

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