3LP01M-TL-H Equivalent & Substitute Parts

Part Overview

The 3LP01M-TL-H is a P-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage with 100mA continuous drain current at 25°C. This device is packaged in SC-70/SOT-323 surface mount configuration and is designed for low-power switching applications requiring compact form factors.

The 3LP01M-TL-H carries an Obsolete product status. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this component.

Substiute Parts

3LP01M-TL-H

onsemiIn Stock: 2491963LP01M-TL-H Datasheet

Current PartRFQ

BSS84LT1G

onsemiIn Stock: 272131BSS84LT1G Datasheet

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RSC002P03T316

Rohm SemiconductorIn Stock: 19182RSC002P03T316 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the 3LP01M-TL-H is determined by the following critical parameters:

Primary Substitution Criteria:

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): Minimum 30V
• Current - Continuous Drain (Id) @ 25°C: Minimum 100mA
• Mounting Type: Surface Mount
• Moisture Sensitivity Level (MSL): 1 (Unlimited)

Secondary Compatibility Factors:

• Rds On (Max): Lower or equivalent values indicate improved performance
• Power Dissipation (Max): Minimum 150mW
• Operating Temperature (TJ): Minimum 150°C
• Gate Charge (Qg): Lower values preferred for switching speed
• Input Capacitance (Ciss): Lower values preferred for gate drive efficiency

The substitute parts identified meet or exceed the primary substitution criteria. Package variations (SC-70/SOT-323 versus SOT-23-3/TO-236) are acceptable provided pin configuration compatibility is verified at the circuit board level.

Parameter Comparison

Engineering Selection Recommendations

BSS84LT1G (onsemi): This substitute part is manufactured by onsemi, the original manufacturer of the 3LP01M-TL-H, and carries Active product status. The BSS84LT1G exceeds the primary substitution criteria with 50V Vdss rating and 130mA continuous drain current. Power dissipation capability is increased to 225mW. The device is ROHS3 Compliant and REACH Unaffected. Package configuration differs (SOT-23-3 versus SC-70/SOT-323), requiring verification of circuit board layout compatibility. Gate charge and input capacitance are higher, which may affect switching characteristics in timing-critical applications.

RSC002P03T316 (Rohm Semiconductor): This substitute part maintains the 30V Vdss rating matching the original specification and provides significantly enhanced current handling at 250mA continuous drain current. Rds On performance is substantially improved at 1.4 Ohm @ 250mA, 10V. Power dissipation is rated at 200mW. The device is ROHS3 Compliant and REACH Unaffected with Active product status. Package configuration is SOT-23-3, requiring circuit board layout verification. Gate charge and input capacitance specifications are comparable to BSS84LT1G.

Both substitute parts satisfy regulatory compliance requirements and offer improved electrical performance characteristics relative to the obsolete 3LP01M-TL-H.

Frequently Asked Questions (FAQ)

Q: Can the BSS84LT1G directly replace the 3LP01M-TL-H without circuit modifications?

A: The BSS84LT1G meets all primary electrical substitution criteria. However, package configuration differs (SOT-23-3 versus SC-70/SOT-323). Pin-to-pin compatibility must be verified against the specific circuit board layout. Gate drive characteristics may differ due to higher input capacitance (30 pF versus 7.5 pF), which could affect switching speed in applications with limited gate drive current.

Q: What is the primary advantage of the RSC002P03T316 over the BSS84LT1G?

A: The RSC002P03T316 maintains the original 30V Vdss specification and provides superior current handling capability at 250mA continuous drain current versus 130mA for the BSS84LT1G. Rds On performance is significantly improved at 1.4 Ohm, reducing conduction losses in applications requiring higher current throughput.

Q: Are there package compatibility concerns when substituting these parts?

A: Yes. The original 3LP01M-TL-H uses SC-70/SOT-323 packaging. Both substitute parts use SOT-23-3/TO-236 packaging. While both are surface mount configurations, physical dimensions and pin spacing differ. Circuit board layout and footprint must be verified for compatibility before implementation.

Q: Do the substitute parts have the same gate voltage requirements?

A: The 3LP01M-TL-H specifies Vgs (Max) at ±10V. Both substitute parts support ±20V maximum gate voltage, providing greater gate drive flexibility. This does not create incompatibility; circuits designed for ±10V operation will function correctly with these substitutes.

Q: Which substitute part is recommended for new designs?

A: Selection depends on application requirements. For applications requiring the original 30V Vdss specification with higher current capability, the RSC002P03T316 is appropriate. For applications where higher voltage rating (50V) provides design margin, the BSS84LT1G is suitable. Both parts carry Active product status and full regulatory compliance.

Q: What is the impact of higher input capacitance in the substitute parts?

A: Input capacitance (Ciss) is higher in both substitutes (30 pF) compared to the original (7.5 pF). This increases gate charge requirements and may slow switching transitions in circuits with limited gate drive current. Applications with robust gate drive circuits will not experience performance degradation.