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3LN01S-TL-E MOSFET N-Channel 30V 150mA Equivalent & Substitute Parts
Part Overview
The 3LN01S-TL-E is an N-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage with 150mA continuous drain current at 25°C. This device is housed in a surface mount SMCP package (TO-236-3, SC-59, SOT-23-3) and dissipates a maximum of 150mW. The part is classified as obsolete, making identification of equivalent and substitute components essential for ongoing design support, production continuity, and system maintenance.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| FET Type | N-Channel | — |
| Drain to Source Voltage (Vdss) | 30 | V |
| Continuous Drain Current (Id) @ 25°C | 150 | mA |
| Power Dissipation (Max) | 150 | mW |
| Rds On (Max) @ Id, Vgs | 3.7 @ 80mA, 4V | Ohm |
| Gate Voltage (Vgs Max) | ±10 | V |
| Mounting Type | Surface Mount | — |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | — |
| Operating Temperature (TJ) | 150 | °C |
| Product Status | Obsolete | — |
Substitute Part Grouping Explanation
Substitution of the 3LN01S-TL-E is determined by strict alignment of the following electrical and mechanical parameters:
Electrical Compatibility Criteria:
- FET Type: N-Channel topology must be maintained
- Drain to Source Voltage (Vdss): Minimum 30V rating required
- Continuous Drain Current (Id): Minimum 150mA at 25°C required
- Gate Voltage (Vgs Max): ±10V or greater required
- Power Dissipation: Minimum 150mW required
Mechanical Compatibility Criteria:
- Mounting Type: Surface Mount required
- Package compatibility: Devices in SC-75, SOT-416, or equivalent surface mount packages acceptable
The substitute part NTA7002NT1G meets all electrical requirements with equal or superior ratings and maintains surface mount compatibility. This part is active in production status and carries current compliance certifications.
Parameter Comparison
| Parameter | 3LN01S-TL-E | NTA7002NT1G | Unit |
|---|---|---|---|
| Manufacturer | onsemi | onsemi | — |
| FET Type | N-Channel | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | — |
| Drain to Source Voltage (Vdss) | 30 | 30 | V |
| Continuous Drain Current (Id) @ 25°C | 150 | 154 | mA |
| Power Dissipation (Max) | 150 | 300 | mW |
| Rds On (Max) @ Id, Vgs | 3.7 @ 80mA, 4V | 7 @ 154mA, 4.5V | Ohm |
| Gate Voltage (Vgs Max) | ±10 | ±10 | V |
| Input Capacitance (Ciss Max) @ Vds | 7 @ 10V | 20 @ 5V | pF |
| Mounting Type | Surface Mount | Surface Mount | — |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | SC-75, SOT-416 | — |
| Operating Temperature Range (TJ) | Up to 150 | -55 to 150 | °C |
| Product Status | Obsolete | Active | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | — |
| REACH Status | REACH Unaffected | REACH Unaffected | — |
| ECCN | EAR99 | EAR99 | — |
Engineering Selection Recommendations
Primary Substitute: NTA7002NT1G
The NTA7002NT1G is the recommended substitute for the obsolete 3LN01S-TL-E based on the following factors:
- Product Status: NTA7002NT1G is active in production, ensuring long-term availability and supply chain continuity
- Electrical Equivalence: Meets or exceeds all critical electrical parameters including Vdss (30V), Id (154mA vs. 150mA), and Vgs (±10V)
- Power Capability: Provides doubled power dissipation rating (300mW vs. 150mW), offering improved thermal margin
- Compliance: Maintains identical REACH and ECCN classifications (REACH Unaffected, EAR99)
- Moisture Sensitivity: Equivalent MSL rating (1 - Unlimited)
- Regulatory Alignment: NTA7002NT1G carries RoHS3 compliance certification
Package Consideration: The NTA7002NT1G uses SC-75 and SOT-416 packages, which differ from the original TO-236-3/SC-59/SOT-23-3 packages. PCB layout and footprint modifications are required for implementation.
Frequently Asked Questions (FAQ)
Q: Can the NTA7002NT1G directly replace the 3LN01S-TL-E without circuit modifications?
A: Electrical substitution is valid based on parameter alignment. However, package differences (SC-75/SOT-416 vs. TO-236-3/SC-59/SOT-23-3) require PCB footprint redesign. Pin configuration and thermal characteristics differ between packages.
Q: What is the significance of the higher power dissipation rating in the NTA7002NT1G?
A: The NTA7002NT1G is rated for 300mW maximum power dissipation compared to 150mW in the 3LN01S-TL-E. This provides additional thermal headroom and allows operation in higher power applications without exceeding junction temperature limits.
Q: Are there differences in gate charge characteristics between these parts?
A: Yes. The 3LN01S-TL-E specifies 1.58 nC gate charge at 10V, while the NTA7002NT1G does not provide this specification in the supplied data. Input capacitance differs: 7 pF at 10V (3LN01S-TL-E) versus 20 pF at 5V (NTA7002NT1G). These differences affect switching speed and gate drive requirements.
Q: Why is the 3LN01S-TL-E classified as obsolete?
A: Obsolete status indicates the part is no longer manufactured or supported by onsemi. The NTA7002NT1G, as an active product, provides continuity for new designs and ongoing production support.
Q: What compliance certifications apply to both parts?
A: Both parts carry identical REACH Unaffected and EAR99 ECCN classifications. The NTA7002NT1G additionally carries RoHS3 compliance certification, which the 3LN01S-TL-E data does not specify.
Q: Are there operating temperature differences between the parts?
A: The NTA7002NT1G specifies an extended operating temperature range of -55°C to 150°C (TJ), compared to the 3LN01S-TL-E which specifies operation up to 150°C (TJ). The substitute provides improved low-temperature performance.
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