3LN01S-TL-E MOSFET N-Channel 30V 150mA Equivalent & Substitute Parts

Part Overview

The 3LN01S-TL-E is an N-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage with 150mA continuous drain current at 25°C. This device is housed in a surface mount SMCP package (TO-236-3, SC-59, SOT-23-3) and dissipates a maximum of 150mW. The part is classified as obsolete, making identification of equivalent and substitute components essential for ongoing design support, production continuity, and system maintenance.

Substiute Parts

3LN01S-TL-E
onsemiIn Stock: 443713LN01S-TL-E Datasheet
3LN01S-TL-E
Current Part
NTA7002NT1G
onsemiIn Stock: 35146NTA7002NT1G Datasheet
NTA7002NT1G
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Key Parameters

Parameter Value Unit
FET Type N-Channel
Drain to Source Voltage (Vdss) 30 V
Continuous Drain Current (Id) @ 25°C 150 mA
Power Dissipation (Max) 150 mW
Rds On (Max) @ Id, Vgs 3.7 @ 80mA, 4V Ohm
Gate Voltage (Vgs Max) ±10 V
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature (TJ) 150 °C
Product Status Obsolete

Substitute Part Grouping Explanation

Substitution of the 3LN01S-TL-E is determined by strict alignment of the following electrical and mechanical parameters:

Electrical Compatibility Criteria:

  • FET Type: N-Channel topology must be maintained
  • Drain to Source Voltage (Vdss): Minimum 30V rating required
  • Continuous Drain Current (Id): Minimum 150mA at 25°C required
  • Gate Voltage (Vgs Max): ±10V or greater required
  • Power Dissipation: Minimum 150mW required

Mechanical Compatibility Criteria:

  • Mounting Type: Surface Mount required
  • Package compatibility: Devices in SC-75, SOT-416, or equivalent surface mount packages acceptable

The substitute part NTA7002NT1G meets all electrical requirements with equal or superior ratings and maintains surface mount compatibility. This part is active in production status and carries current compliance certifications.

Parameter Comparison

Parameter 3LN01S-TL-E NTA7002NT1G Unit
Manufacturer onsemi onsemi
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 30 V
Continuous Drain Current (Id) @ 25°C 150 154 mA
Power Dissipation (Max) 150 300 mW
Rds On (Max) @ Id, Vgs 3.7 @ 80mA, 4V 7 @ 154mA, 4.5V Ohm
Gate Voltage (Vgs Max) ±10 ±10 V
Input Capacitance (Ciss Max) @ Vds 7 @ 10V 20 @ 5V pF
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SC-75, SOT-416
Operating Temperature Range (TJ) Up to 150 -55 to 150 °C
Product Status Obsolete Active
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected
ECCN EAR99 EAR99

Engineering Selection Recommendations

Primary Substitute: NTA7002NT1G

The NTA7002NT1G is the recommended substitute for the obsolete 3LN01S-TL-E based on the following factors:

  • Product Status: NTA7002NT1G is active in production, ensuring long-term availability and supply chain continuity
  • Electrical Equivalence: Meets or exceeds all critical electrical parameters including Vdss (30V), Id (154mA vs. 150mA), and Vgs (±10V)
  • Power Capability: Provides doubled power dissipation rating (300mW vs. 150mW), offering improved thermal margin
  • Compliance: Maintains identical REACH and ECCN classifications (REACH Unaffected, EAR99)
  • Moisture Sensitivity: Equivalent MSL rating (1 - Unlimited)
  • Regulatory Alignment: NTA7002NT1G carries RoHS3 compliance certification

Package Consideration: The NTA7002NT1G uses SC-75 and SOT-416 packages, which differ from the original TO-236-3/SC-59/SOT-23-3 packages. PCB layout and footprint modifications are required for implementation.

Frequently Asked Questions (FAQ)

Q: Can the NTA7002NT1G directly replace the 3LN01S-TL-E without circuit modifications?

A: Electrical substitution is valid based on parameter alignment. However, package differences (SC-75/SOT-416 vs. TO-236-3/SC-59/SOT-23-3) require PCB footprint redesign. Pin configuration and thermal characteristics differ between packages.

Q: What is the significance of the higher power dissipation rating in the NTA7002NT1G?

A: The NTA7002NT1G is rated for 300mW maximum power dissipation compared to 150mW in the 3LN01S-TL-E. This provides additional thermal headroom and allows operation in higher power applications without exceeding junction temperature limits.

Q: Are there differences in gate charge characteristics between these parts?

A: Yes. The 3LN01S-TL-E specifies 1.58 nC gate charge at 10V, while the NTA7002NT1G does not provide this specification in the supplied data. Input capacitance differs: 7 pF at 10V (3LN01S-TL-E) versus 20 pF at 5V (NTA7002NT1G). These differences affect switching speed and gate drive requirements.

Q: Why is the 3LN01S-TL-E classified as obsolete?

A: Obsolete status indicates the part is no longer manufactured or supported by onsemi. The NTA7002NT1G, as an active product, provides continuity for new designs and ongoing production support.

Q: What compliance certifications apply to both parts?

A: Both parts carry identical REACH Unaffected and EAR99 ECCN classifications. The NTA7002NT1G additionally carries RoHS3 compliance certification, which the 3LN01S-TL-E data does not specify.

Q: Are there operating temperature differences between the parts?

A: The NTA7002NT1G specifies an extended operating temperature range of -55°C to 150°C (TJ), compared to the 3LN01S-TL-E which specifies operation up to 150°C (TJ). The substitute provides improved low-temperature performance.

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