3LN01M-TL-E N-Channel MOSFET 30V 150mA Equivalent & Substitute Parts

Part Overview

The 3LN01M-TL-E is an N-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage with 150mA continuous drain current. The device is housed in an SC-70/SOT-323 surface mount package and dissipates a maximum of 150mW. This part is classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support and production continuity. Substitute parts must maintain compatibility across key electrical parameters including voltage rating, current capacity, and thermal characteristics while accommodating the surface mount package requirement.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	150	mA
Power Dissipation (Max)	150	mW
Rds On (Max) @ Id, Vgs	3.7	Ω @ 80mA, 4V
Vgs(th) (Max) @ Id	1.3	V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	1.58	nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	7	pF @ 10V
Vgs (Max)	±10	V
Operating Temperature (TJ)	150	°C
Mounting Type	Surface Mount	—
Package / Case	SC-70, SOT-323	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitute parts for the 3LN01M-TL-E are selected based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:

Mandatory Compatibility Criteria:

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): Equal to or greater than 30V
Continuous Drain Current (Id): Equal to or greater than 150mA
Mounting Type: Surface Mount
Package Family: SC-70 or SOT-323 compatible packages

Secondary Compatibility Parameters:

Power Dissipation: Equal to or greater than 150mW
Operating Temperature Range: Must support 150°C maximum junction temperature
Moisture Sensitivity Level: MSL 1 or equivalent

The substitute parts identified are grouped into two categories:

Direct Substitute (NTS4001NT1G): Maintains identical voltage rating (30V) while exceeding current capacity (270mA vs. 150mA) and power dissipation (330mW vs. 150mW). Uses compatible SC-70-3 (SOT323) package. Product status is active with RoHS3 compliance.

Similar Substitute (RYM002N05T2CL): Exceeds voltage rating (50V vs. 30V) and meets current requirements (200mA vs. 150mA). Uses VMT3 package (SOT-723), which is a different form factor. Product status is active with RoHS3 compliance.

Parameter Comparison

Parameter	3LN01M-TL-E (Main)	NTS4001NT1G (Direct)	RYM002N05T2CL (Similar)	Unit
Manufacturer	onsemi	onsemi	Rohm Semiconductor	—
FET Type	N-Channel	N-Channel	N-Channel	—
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	30	30	50	V
Continuous Drain Current (Id) @ 25°C	150	270	200	mA
Power Dissipation (Max)	150	330	150	mW
Rds On (Max) @ Id, Vgs	3.7 @ 80mA, 4V	1.5 @ 10mA, 4V	2.2 @ 200mA, 4.5V	Ω
Vgs(th) (Max) @ Id	1.3 @ 100µA	1.5 @ 100µA	0.8 @ 1mA	V
Gate Charge (Qg) (Max) @ Vgs	1.58 @ 10V	1.3 @ 5V	Not specified	nC
Input Capacitance (Ciss) (Max) @ Vds	7 @ 10V	33 @ 5V	26 @ 10V	pF
Vgs (Max)	±10	±20	±8	V
Operating Temperature (TJ)	150	-55 to 150	150	°C
Mounting Type	Surface Mount	Surface Mount	Surface Mount	—
Package / Case	SC-70, SOT-323	SC-70, SOT-323	SOT-723	—
Product Status	Obsolete	Active	Active	—
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	—

Engineering Selection Recommendations

NTS4001NT1G (Direct Substitute): The NTS4001NT1G is the primary substitute for the 3LN01M-TL-E. Both devices share identical voltage ratings (30V Vdss) and compatible SC-70/SOT-323 packaging. The NTS4001NT1G provides enhanced performance with higher continuous drain current (270mA vs. 150mA) and greater power dissipation capability (330mW vs. 150mW). The device is manufactured by onsemi, the same supplier as the original part, ensuring consistency in process technology and reliability. The NTS4001NT1G holds active product status with RoHS3 compliance, supporting long-term availability and regulatory requirements. The extended operating temperature range (-55°C to 150°C) provides additional thermal margin compared to the original part specification.

RYM002N05T2CL (Similar Substitute): The RYM002N05T2CL is a similar substitute manufactured by Rohm Semiconductor. This device exceeds the voltage rating of the original part (50V vs. 30V Vdss) and meets current requirements (200mA vs. 150mA). The RYM002N05T2CL is active and RoHS3 compliant. However, this part uses a VMT3 package (SOT-723), which differs from the SC-70/SOT-323 package of the original device. PCB layout modifications are required for package substitution. The higher voltage rating provides design margin for applications with voltage transients or future design revisions.

Selection Basis: Both substitute parts are active products with current manufacturing support and RoHS3 compliance. The NTS4001NT1G is recommended for direct replacement in existing designs due to package compatibility. The RYM002N05T2CL is suitable for new designs or redesigns where package footprint changes are acceptable and higher voltage margin is beneficial.

Frequently Asked Questions (FAQ)

Q: Can the NTS4001NT1G be used as a direct replacement for the 3LN01M-TL-E without PCB modifications?

A: Yes. Both devices use compatible SC-70/SOT-323 packages and share identical 30V voltage ratings. The NTS4001NT1G provides higher current capacity (270mA vs. 150mA) and power dissipation (330mW vs. 150mW), making it electrically compatible for direct substitution. No PCB layout changes are required.

Q: What are the key differences between the NTS4001NT1G and RYM002N05T2CL substitutes?

A: The NTS4001NT1G maintains the original 30V voltage rating with enhanced current and power handling, using the same SC-70/SOT-323 package. The RYM002N05T2CL increases the voltage rating to 50V and uses a different VMT3 (SOT-723) package, requiring PCB redesign. Both are active products with RoHS3 compliance.

Q: Is the RYM002N05T2CL suitable for applications designed for the 3LN01M-TL-E?

A: The RYM002N05T2CL meets the electrical requirements (current and power dissipation) but uses a different package footprint (VMT3 vs. SC-70). PCB layout modifications are necessary. The higher voltage rating (50V vs. 30V) provides additional design margin and is compatible with applications rated for 30V operation.

Q: What is the moisture sensitivity level for these substitute parts?

A: All three parts, including the original 3LN01M-TL-E and both substitutes (NTS4001NT1G and RYM002N05T2CL), have a Moisture Sensitivity Level (MSL) of 1, indicating unlimited shelf life without moisture control requirements.

Q: Are the substitute parts RoHS compliant?

A: The NTS4001NT1G and RYM002N05T2CL are both RoHS3 compliant. The original 3LN01M-TL-E RoHS status is not specified in the provided data.

Q: What is the operating temperature range for each part?

A: The 3LN01M-TL-E and RYM002N05T2CL are rated to 150°C maximum junction temperature. The NTS4001NT1G has an extended range of -55°C to 150°C, providing additional thermal margin for low-temperature applications.

Q: Can I use the NTS4001NT1G in a circuit designed for 150mA continuous drain current?

A: Yes. The NTS4001NT1G is rated for 270mA continuous drain current, exceeding the 150mA requirement. The device operates safely at lower current levels with improved thermal performance due to lower power dissipation at reduced current.

Q: What package types are used by these MOSFET devices?

A: The 3LN01M-TL-E and NTS4001NT1G use SC-70/SOT-323 packages. The RYM002N05T2CL uses a VMT3 package (SOT-723), which is physically smaller and requires different PCB footprint design.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message