31DF6 B0G Equivalent & Substitute Parts

Part Overview

The 31DF6 B0G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 600 V DC reverse voltage and 3 A average rectified current in a DO-201AD axial through-hole package. This component is classified as Active product status and is ROHS3 compliant. Equivalent and substitute parts are identified based on matching or superior electrical ratings and identical mechanical packaging to ensure direct circuit board compatibility and functional interchangeability.

Key Parameters

Parameter	Value
Voltage - DC Reverse (Vr) (Max)	600 V
Current - Average Rectified (Io)	3 A
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 3 A
Reverse Recovery Time (trr)	35 ns
Current - Reverse Leakage @ Vr	20 µA @ 600 V
Speed Classification	Fast Recovery ≤ 500 ns, > 200 mA (Io)
Package / Case	DO-201AD, Axial
Mounting Type	Through Hole
Operating Temperature - Junction	-40°C ~ 150°C
RoHS Status	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for the 31DF6 B0G are grouped based on the following substitution criteria:

Primary Substitution Criteria:

Voltage - DC Reverse (Vr) (Max): Must equal or exceed 600 V
Current - Average Rectified (Io): Must equal or exceed 3 A
Package / Case: Must be DO-201AD, Axial (through-hole)
Mounting Type: Must be Through Hole
RoHS Status: Must be ROHS3 Compliant

Secondary Compatibility Factors:

Operating Temperature Range: Wider or equivalent range acceptable
Reverse Recovery Time (trr): Lower values indicate faster switching capability
Forward Voltage (Vf): Lower values indicate improved efficiency
Reverse Leakage Current: Lower values indicate superior blocking characteristics

Parts are classified into two categories:

Category A - Direct Equivalents (3 A rated current): Parts with identical 3 A current rating and 600 V voltage rating in DO-201AD package. These provide direct functional replacement with potential improvements in forward voltage drop or recovery time characteristics.

Category B - Higher Current Rated (≥ 4 A): Parts with current ratings exceeding 3 A while maintaining 600 V voltage rating and DO-201AD package. These provide enhanced current handling capability and are suitable for applications requiring additional thermal or current margin.

Parameter Comparison

Part Number	Manufacturer	Vr (Max)	Io (A)	Vf (Max) @ If	Speed	trr (ns)	Ir @ Vr	Tj (Max)
31DF6 B0G	Taiwan Semiconductor Corporation	600 V	3	1.7 V @ 3 A	Fast Recovery ≤ 500 ns	35	20 µA @ 600 V	150°C
1N5406-E3/54	Vishay General Semiconductor	600 V	3	1.2 V @ 3 A	Standard Recovery > 500 ns	—	5 µA @ 600 V	150°C
1N5406-E3/73	Vishay General Semiconductor	600 V	3	1.2 V @ 3 A	Standard Recovery > 500 ns	—	5 µA @ 600 V	150°C
60S6-TP	Micro Commercial Co	600 V	6	1.0 V @ 6 A	Standard Recovery > 500 ns	—	5 µA @ 600 V	150°C
GI506-E3/54	Vishay General Semiconductor	600 V	3	1.1 V @ 9.4 A	Standard Recovery > 500 ns	2000	5 µA @ 600 V	150°C
GP30J-E3/54	Vishay General Semiconductor	600 V	3	1.1 V @ 3 A	Standard Recovery > 500 ns	5000	5 µA @ 600 V	175°C
GP30J-E3/73	Vishay General Semiconductor	600 V	3	1.1 V @ 3 A	Standard Recovery > 500 ns	5000	5 µA @ 600 V	175°C
MUR460-E3/54	Vishay General Semiconductor	600 V	4	1.28 V @ 4 A	Fast Recovery ≤ 500 ns	75	10 µA @ 600 V	175°C
P300J-E3/54	Vishay General Semiconductor	600 V	3	1.2 V @ 3 A	Standard Recovery > 500 ns	2000	5 µA @ 600 V	150°C
RGP30J-E3/54	Vishay General Semiconductor	600 V	3	1.3 V @ 3 A	Fast Recovery ≤ 500 ns	250	5 µA @ 600 V	175°C
STTH3L06	STMicroelectronics	600 V	3	1.3 V @ 3 A	Fast Recovery ≤ 500 ns	85	3 µA @ 600 V	175°C

Engineering Selection Recommendations

All substitute parts listed maintain ROHS3 compliance and REACH unaffected status, consistent with the 31DF6 B0G regulatory requirements. Selection among substitute parts is determined by application-specific requirements within the following framework:

For Direct Functional Replacement (3 A, 600 V, DO-201AD):

The 1N5406-E3/54, 1N5406-E3/73, GI506-E3/54, GP30J-E3/54, GP30J-E3/73, P300J-E3/54, and RGP30J-E3/54 provide equivalent voltage and current ratings. These parts differ in forward voltage characteristics, recovery time specifications, and maximum junction temperature ratings. The 31DF6 B0G exhibits a higher forward voltage (1.7 V @ 3 A) and faster recovery time (35 ns) compared to standard recovery alternatives, positioning it for applications requiring fast switching performance.

For Enhanced Current Capability:

The 60S6-TP (6 A) and MUR460-E3/54 (4 A) exceed the 3 A rating of the 31DF6 B0G while maintaining 600 V voltage rating and DO-201AD packaging. These parts accommodate applications requiring additional current margin or thermal headroom.

Temperature Considerations:

The 31DF6 B0G operates to 150°C maximum junction temperature. Substitute parts from Vishay SUPERECTIFIER® series (GP30J-E3/54, GP30J-E3/73, RGP30J-E3/54) and STMicroelectronics (STTH3L06) extend maximum junction temperature to 175°C, providing enhanced thermal performance in high-temperature environments.

Recovery Time Characteristics:

The 31DF6 B0G specifies 35 ns reverse recovery time, classified as fast recovery. Substitute parts with comparable fast recovery specifications include MUR460-E3/54 (75 ns) and STTH3L06 (85 ns). Standard recovery alternatives (1N5406 series, GI506-E3/54, GP30J series, P300J-E3/54) exceed 500 ns recovery time and are suitable for lower-frequency applications.

Frequently Asked Questions (FAQ)

Q: Can the 31DF6 B0G be replaced with a 1N5406-E3/54?

A: Yes. Both parts are rated 600 V, 3 A in DO-201AD package. The 1N5406-E3/54 exhibits lower forward voltage (1.2 V vs. 1.7 V @ 3 A) and lower reverse leakage current (5 µA vs. 20 µA @ 600 V). The 31DF6 B0G provides faster recovery time (35 ns vs. standard recovery > 500 ns). Selection depends on whether fast switching or reduced forward voltage drop is prioritized in the application.

Q: What is the difference between fast recovery and standard recovery diodes?

A: Recovery time (trr) defines the interval required for a diode to transition from forward conduction to reverse blocking state. The 31DF6 B0G specifies fast recovery (≤ 500 ns, 35 ns typical), suitable for high-frequency switching applications. Standard recovery alternatives (> 500 ns) are appropriate for lower-frequency rectification circuits where switching speed is not critical.

Q: Can a 6 A rated diode (60S6-TP) replace a 3 A rated diode (31DF6 B0G)?

A: Yes, from an electrical standpoint. The 60S6-TP maintains 600 V voltage rating and DO-201AD package compatibility. Higher current rating provides additional thermal margin and current capacity. Forward voltage is lower (1.0 V @ 6 A), reducing power dissipation. Mechanical fit and circuit board layout remain identical. Application requirements determine whether the enhanced current capability is necessary or beneficial.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed are ROHS3 compliant and REACH unaffected, matching the regulatory status of the 31DF6 B0G.

Q: What is the significance of maximum junction temperature (Tj)?

A: Maximum junction temperature defines the upper thermal limit for safe device operation. The 31DF6 B0G specifies 150°C maximum. Substitute parts rated to 175°C (GP30J series, RGP30J-E3/54, STTH3L06) provide enhanced thermal margin in applications approaching thermal limits. Operating temperature range does not affect electrical substitutability but influences reliability in high-temperature environments.

Q: Does packaging variant (Cut Tape vs. Tape & Reel) affect electrical compatibility?

A: No. Packaging variant (Cut Tape, Tape & Reel) affects supply chain logistics and handling but does not alter electrical characteristics or mechanical fit. All substitute parts use identical DO-201AD axial through-hole package, ensuring direct board-level compatibility regardless of packaging format.

Q: Can the 31DF6 B0G be used in applications requiring the GP30J-E3/54 specifications?

A: Electrical compatibility exists. Both are rated 600 V, 3 A in DO-201AD package. The 31DF6 B0G provides faster recovery time (35 ns vs. 5 µs) and operates to 150°C (vs. 175°C for GP30J-E3/54). Application requirements determine suitability. If the circuit requires the extended temperature range or specific recovery characteristics of the GP30J-E3/54, the 31DF6 B0G may not be appropriate.

Q: What does reverse leakage current (Ir) indicate?

A: Reverse leakage current measures the small current flowing through a reverse-biased diode. The 31DF6 B0G specifies 20 µA @ 600 V, higher than most substitute alternatives (3–10 µA). Lower leakage current indicates superior blocking performance and reduced power loss in reverse bias conditions. Applications sensitive to leakage current may benefit from substitute parts with lower Ir specifications.

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