31DF4 B0G Equivalent & Substitute Parts

Part Overview

The 31DF4 B0G is a general-purpose rectifier diode manufactured by Taiwan Semiconductor Corporation, rated for 400 V DC reverse voltage and 3 A average rectified current in a DO-201AD axial through-hole package. This component is classified as a fast recovery diode with a reverse recovery time of 35 ns, suitable for standard rectification applications requiring rapid switching characteristics. The part is Active in product status and fully compliant with RoHS3 and REACH regulations.

Equivalent and substitute parts are identified based on matching or exceeding the electrical and mechanical specifications of the 31DF4 B0G, enabling direct replacement or functional substitution in circuit designs where the primary part is unavailable or where alternative sourcing is required.

Key Parameters

Parameter	31DF4 B0G Specification
Voltage - DC Reverse (Vr) (Max)	400 V
Current - Average Rectified (Io)	3 A
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 3 A
Speed Classification	Fast Recovery ≤ 500 ns, > 200 mA (Io)
Reverse Recovery Time (trr)	35 ns
Current - Reverse Leakage @ Vr	20 µA @ 400 V
Mounting Type	Through Hole
Package / Case	DO-201AD, Axial
Operating Temperature - Junction	-40°C ~ 150°C
RoHS Status	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for the 31DF4 B0G are grouped based on the following critical parameters that determine functional equivalence:

Primary Matching Criteria:

Voltage - DC Reverse (Vr) (Max): 400 V minimum
Current - Average Rectified (Io): 3 A minimum
Package / Case: DO-201AD, Axial (through-hole)
Mounting Type: Through Hole
RoHS Status: ROHS3 Compliant

Secondary Compatibility Factors:

Voltage - Forward (Vf) (Max) @ If: Lower or equal values indicate improved performance
Speed Classification: Fast Recovery or Standard Recovery acceptable
Reverse Recovery Time (trr): Lower values indicate faster switching
Current - Reverse Leakage @ Vr: Lower values indicate reduced leakage
Operating Temperature Range: Must accommodate application requirements

All substitute parts listed meet or exceed the primary matching criteria. Variations in secondary parameters reflect different manufacturer designs and performance characteristics within the same functional class.

Parameter Comparison

Part Number	Manufacturer	Vr (Max)	Io	Vf (Max) @ If	Speed	trr	Ir @ Vr	Tj (Operating)
31DF4 B0G	Taiwan Semiconductor Corporation	400 V	3 A	1.7 V @ 3 A	Fast Recovery ≤ 500 ns	35 ns	20 µA @ 400 V	-40°C ~ 150°C
1N5404-E3/54	Vishay General Semiconductor - Diodes Division	400 V	3 A	1.2 V @ 3 A	Standard Recovery > 500 ns	—	5 µA @ 400 V	-50°C ~ 150°C
1N5404-E3/73	Vishay General Semiconductor - Diodes Division	400 V	3 A	1.2 V @ 3 A	Standard Recovery > 500 ns	—	5 µA @ 400 V	-50°C ~ 150°C
GP30G-E3/54	Vishay General Semiconductor - Diodes Division	400 V	3 A	1.1 V @ 3 A	Standard Recovery > 500 ns	5 µs	5 µA @ 400 V	-65°C ~ 175°C
MUR440-E3/54	Vishay General Semiconductor - Diodes Division	400 V	4 A	1.28 V @ 4 A	Fast Recovery ≤ 500 ns	75 ns	10 µA @ 400 V	-65°C ~ 175°C
RGP30G-E3/54	Vishay General Semiconductor - Diodes Division	400 V	3 A	1.3 V @ 3 A	Fast Recovery ≤ 500 ns	150 ns	5 µA @ 400 V	-65°C ~ 175°C
RGP30G-E3/73	Vishay General Semiconductor - Diodes Division	400 V	3 A	1.3 V @ 3 A	Fast Recovery ≤ 500 ns	150 ns	5 µA @ 400 V	-65°C ~ 175°C
STTH3R04RL	STMicroelectronics	400 V	3 A	1.5 V @ 3 A	Fast Recovery ≤ 500 ns	35 ns	5 µA @ 400 V	-40°C ~ 175°C
UF5404-E3/54	Vishay General Semiconductor - Diodes Division	400 V	3 A	1.0 V @ 3 A	Fast Recovery ≤ 500 ns	50 ns	10 µA @ 400 V	-55°C ~ 150°C
UF5404-E3/73	Vishay General Semiconductor - Diodes Division	400 V	3 A	1.0 V @ 3 A	Fast Recovery ≤ 500 ns	50 ns	10 µA @ 400 V	-55°C ~ 150°C

Engineering Selection Recommendations

All listed substitute parts are Active in product status and fully compliant with RoHS3 and REACH regulations, matching the compliance profile of the 31DF4 B0G. Selection among equivalent parts depends on application-specific requirements:

Direct Electrical Equivalents (Matched Specifications): The STTH3R04RL from STMicroelectronics provides the closest electrical match to the 31DF4 B0G, with identical reverse recovery time (35 ns), matching voltage rating (400 V), current rating (3 A), and fast recovery speed classification. Operating temperature range extends to 175°C maximum.

Lower Forward Voltage Options: The UF5404-E3/54 and UF5404-E3/73 offer the lowest forward voltage drop (1.0 V @ 3 A) among all substitutes, resulting in reduced power dissipation. These parts maintain fast recovery characteristics with 50 ns reverse recovery time and are suitable for applications prioritizing efficiency.

Extended Temperature Range: The GP30G-E3/54, MUR440-E3/54, RGP30G-E3/54, and RGP30G-E3/73 provide extended operating temperature ranges (-65°C to 175°C), accommodating applications requiring operation beyond the 31DF4 B0G's -40°C to 150°C range.

Higher Current Rating: The MUR440-E3/54 is rated for 4 A average rectified current, providing margin above the 3 A requirement and enabling use in applications with potential current growth or design margin requirements.

Standard Recovery Alternative: The 1N5404-E3/54 and 1N5404-E3/73 provide standard recovery characteristics (> 500 ns) with lower reverse leakage current (5 µA @ 400 V) and reduced forward voltage (1.2 V @ 3 A), suitable for applications where switching speed is not critical.

Frequently Asked Questions (FAQ)

Q: Can the 31DF4 B0G be directly replaced with any of the listed substitute parts?

A: All listed substitute parts meet the minimum electrical and mechanical requirements for direct replacement in the DO-201AD through-hole package. However, application-specific factors such as operating temperature range, forward voltage drop, and reverse recovery time must be evaluated against circuit requirements.

Q: What is the significance of reverse recovery time (trr) in selecting a substitute?

A: Reverse recovery time determines the speed at which the diode transitions from conducting to blocking state. The 31DF4 B0G has a trr of 35 ns (fast recovery). Substitutes with equal or lower trr values maintain switching performance. Substitutes with higher trr values (such as GP30G-E3/54 at 5 µs) are suitable only for applications where switching speed is not performance-critical.

Q: Are there differences between the -E3/54 and -E3/73 packaging variants?

A: The -E3/54 and -E3/73 designations indicate different tape and reel configurations for automated assembly. Electrical specifications remain identical between these variants. Selection depends on manufacturing process requirements and inventory management practices.

Q: How does forward voltage drop affect circuit performance?

A: Forward voltage drop (Vf) directly impacts power dissipation and heat generation in the diode. Lower Vf values reduce power loss. The 31DF4 B0G has Vf of 1.7 V @ 3 A, while substitutes range from 1.0 V to 1.3 V. Applications sensitive to power dissipation benefit from lower Vf alternatives such as UF5404-E3/54 or UF5404-E3/73.

Q: What is the difference between fast recovery and standard recovery diodes?

A: Fast recovery diodes (trr ≤ 500 ns) are designed for high-frequency switching applications and exhibit rapid transition from forward to reverse bias. Standard recovery diodes (trr > 500 ns) are suitable for lower-frequency rectification where switching speed is not critical. The 31DF4 B0G is classified as fast recovery; substitutes maintain this classification except for the 1N5404 series and GP30G-E3/54, which are standard recovery.

Q: Can the MUR440-E3/54 be used as a substitute despite its 4 A rating versus the 3 A requirement?

A: Yes. The MUR440-E3/54 is rated for 4 A average rectified current, which exceeds the 31DF4 B0G's 3 A requirement. This higher rating provides design margin and is electrically compatible. The 400 V voltage rating, DO-201AD package, and fast recovery characteristics match the primary requirements.

Q: What compliance certifications apply to all substitute parts?

A: All listed substitute parts are RoHS3 Compliant and REACH Unaffected, matching the regulatory compliance of the 31DF4 B0G. These certifications ensure suitability for applications subject to environmental and hazardous substance restrictions.

Q: How should operating temperature range be considered when selecting a substitute?

A: The 31DF4 B0G operates from -40°C to 150°C. Substitutes with extended ranges (such as -65°C to 175°C) accommodate applications requiring operation outside this window. Substitutes with narrower ranges must be evaluated against specific application temperature requirements to ensure compliance.

Q: Is reverse leakage current (Ir) a critical parameter for substitution?

A: Reverse leakage current affects circuit performance in applications sensitive to leakage, such as precision analog circuits or high-impedance circuits. The 31DF4 B0G has Ir of 20 µA @ 400 V. Most substitutes exhibit lower leakage (5-10 µA @ 400 V), which is generally beneficial. Applications with specific leakage requirements should reference the detailed specifications of candidate substitutes.

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