Equivalent & Substitute Parts for 30C02CH-TL-E

Part Overview

The 30C02CH-TL-E is an NPN bipolar junction transistor manufactured by onsemi, rated for 30 V collector-emitter breakdown voltage and 700 mA maximum collector current. This device is packaged in a 3-CPH surface mount configuration and is currently classified as obsolete. The part is suitable for general-purpose switching and amplification applications requiring moderate voltage and current ratings.

Due to its obsolete product status, equivalent and substitute parts are necessary for ongoing design support, production continuity, and component sourcing. Substitute devices must maintain electrical compatibility within the specified parameter ranges while offering active product status and assured long-term availability.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	30	V
Current - Collector (Ic) (Max)	700	mA
Power - Max	700	mW
Frequency - Transition	540	MHz
DC Current Gain (hFE) (Min) @ Ic, Vce	300 @ 50mA, 2V	—
Vce Saturation (Max) @ Ib, Ic	190mV @ 10mA, 200mA	—
Mounting Type	Surface Mount	—
Operating Temperature (Max)	150	°C
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the 30C02CH-TL-E is determined by the following critical electrical parameters:

Primary Substitution Criteria:

Transistor Type: NPN (required match)
Voltage - Collector Emitter Breakdown (Max): Must equal or exceed 30 V
Current - Collector (Ic) (Max): Must equal or exceed 700 mA
Power - Max: Must equal or exceed 700 mW
Mounting Type: Surface Mount (required match)
Operating Temperature: Must support 150°C junction temperature

Secondary Compatibility Factors:

Frequency - Transition: Minimum 540 MHz preferred for high-speed applications
DC Current Gain (hFE): Minimum 300 @ specified conditions
Package compatibility: SC-96 or equivalent 3-pin surface mount packages
RoHS and REACH compliance status

Substitute parts are grouped into two categories based on electrical performance alignment:

Category A - Direct Electrical Equivalents: Parts meeting or exceeding all primary substitution criteria with minimal parameter deviation.

Category B - Functional Alternatives: Parts with reduced current or power ratings but maintaining voltage and frequency specifications, suitable for applications with lower current demands.

Parameter Comparison

Part Number	Manufacturer	Vce(BR) Max (V)	Ic Max (mA)	Power Max (mW)	fT (MHz)	hFE Min @ Ic, Vce	Package	Product Status
30C02CH-TL-E	onsemi	30	700	700	540	300 @ 50mA, 2V	SC-96	Obsolete
50C02CH-TL-E	onsemi	50	500	700	500	300 @ 10mA, 2V	SC-59	Active
BSR14	onsemi	40	800	350	300	100 @ 150mA, 10V	SOT-23-3	Active
2SC2411-P-TP	Micro Commercial Co	32	500	200	250	82 @ 100mA, 3V	SOT-23	Active
2SC2411KT146R	Rohm Semiconductor	32	500	200	250	120 @ 100mA, 3V	SOT-23-3	Active
2SD2657TL	Rohm Semiconductor	30	1500	1000	300	270 @ 100mA, 2V	TSMT3	Active
2SD2673TL	Rohm Semiconductor	30	3000	1000	200	270 @ 200mA, 2V	TSMT3	Active
BSR14,215	Nexperia USA Inc.	40	800	250	300	100 @ 150mA, 10V	TO-236AB	Active
CMPT2222A TR PBFREE	Central Semiconductor Corp	40	600	350	300	100 @ 150mA, 10V	SOT-23	Active
MMBT2222A,215	Nexperia USA Inc.	40	600	250	300	100 @ 150mA, 10V	TO-236AB	Active
MMBT2222A-G	Comchip Technology	40	600	300	300	100 @ 150mA, 10mV	SOT-23-3	Active

Engineering Selection Recommendations

For Direct Voltage and Current Equivalence:

The 2SD2657TL (Rohm Semiconductor) provides the closest electrical match to the 30C02CH-TL-E, with identical 30 V collector-emitter breakdown voltage and superior current handling at 1.5 A maximum. This part exceeds the original 700 mA specification and maintains 300 MHz transition frequency. The 2SD2657TL is active, ROHS3 compliant, and available in high inventory quantities. Package configuration is TSMT3 surface mount, compatible with SC-96 footprints.

For Higher Current Applications:

The 2SD2673TL (Rohm Semiconductor) extends current capability to 3 A while maintaining 30 V voltage rating and 1 W power dissipation. This part is suitable for applications requiring increased current margin beyond the original 700 mA specification. Product status is active with ROHS3 compliance.

For Reduced Current Applications:

The 50C02CH-TL-E (onsemi) maintains manufacturer continuity with elevated voltage rating (50 V) and reduced current specification (500 mA). This part is active and ROHS3 compliant, offering the same manufacturer as the original device.

For General-Purpose Switching:

The BSR14 (Nexperia USA Inc., part number BSR14,215) and MMBT2222A,215 (Nexperia USA Inc.) provide 40 V voltage rating with 800 mA and 600 mA current ratings respectively. Both parts are AEC-Q101 qualified automotive-grade devices, active, and ROHS3 compliant. These options offer high inventory availability and established supply chain presence.

Compliance Considerations:

All recommended substitute parts maintain ROHS3 compliance and REACH unaffected status, matching the original device specifications. Moisture sensitivity level remains at MSL 1 (Unlimited) across all alternatives.

Frequently Asked Questions (FAQ)

Q: Can the 50C02CH-TL-E replace the 30C02CH-TL-E in all applications?

A: The 50C02CH-TL-E maintains the same manufacturer (onsemi) and surface mount configuration. However, it reduces maximum collector current from 700 mA to 500 mA while increasing voltage rating to 50 V. Substitution is valid only for applications where 500 mA current is sufficient. The elevated voltage rating provides additional design margin for overvoltage conditions.

Q: What is the primary difference between BSR14 and MMBT2222A,215?

A: Both parts are 40 V rated NPN transistors with 300 MHz transition frequency and 100 minimum hFE. The BSR14 supports 800 mA maximum collector current with 250 mW power dissipation, while MMBT2222A,215 supports 600 mA with identical power rating. BSR14 is preferred for applications requiring higher current capacity. Both are AEC-Q101 qualified and manufactured by Nexperia USA Inc.

Q: Are the 2SC2411-P-TP and 2SC2411KT146R interchangeable?

A: Both parts share the same base product number (2SC2411) with identical 32 V voltage and 500 mA current ratings. The 2SC2411KT146R (Rohm Semiconductor) offers higher minimum hFE (120 vs. 82) and is available in higher inventory quantities. Electrical substitution is valid; however, the Rohm part provides superior current gain characteristics.

Q: What package considerations apply when substituting the 30C02CH-TL-E?

A: The original 30C02CH-TL-E uses SC-96 package. Substitute parts employ various surface mount packages including SOT-23-3, TO-236AB, and TSMT3. All packages are 3-pin surface mount configurations with compatible pinout (Base, Collector, Emitter). PCB layout modifications may be required to accommodate different package footprints. Verify footprint compatibility with design specifications before implementation.

Q: Why is the 2SD2657TL recommended over lower-current alternatives?

A: The 2SD2657TL maintains the original 30 V voltage specification and provides 1.5 A current capacity, exceeding the 700 mA original rating by 114%. This part delivers superior performance margin for transient current conditions and thermal stress. The 300 MHz transition frequency supports high-speed switching applications. Active product status and high inventory availability ensure long-term supply continuity.

Q: Are all substitute parts RoHS3 compliant?

A: All substitute parts listed in this reference maintain ROHS3 compliance status, matching the original 30C02CH-TL-E specification. REACH status is unaffected across all alternatives. Compliance documentation is available from respective manufacturers upon request.

Q: What is the significance of DC Current Gain (hFE) variation among substitutes?

A: DC Current Gain variation reflects manufacturing process differences across suppliers. The original 30C02CH-TL-E specifies minimum hFE of 300 @ 50mA, 2V. Substitute parts range from 82 to 300 minimum hFE at different measurement conditions. Lower hFE values require higher base current to achieve saturation. Circuit designs must accommodate hFE variation through base resistor adjustment or current source biasing to ensure consistent switching performance.

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