2STC5242 Equivalent & Substitute Parts

Part Overview

The 2STC5242 is an NPN bipolar junction transistor manufactured by STMicroelectronics, rated for 230 V collector-emitter breakdown voltage and 15 A maximum collector current. This device is designed for high-power switching and amplification applications in the TO-3P package configuration. The 2STC5242 is classified as obsolete, necessitating identification of active equivalent and substitute components that maintain electrical and mechanical compatibility for ongoing system support and new designs.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Current - Collector (Ic) Max	15	A
Voltage - Collector Emitter Breakdown (Max)	230	V
Power - Max	150	W
Frequency - Transition	30	MHz
Operating Temperature (TJ)	150	°C
Mounting Type	Through Hole	—
Package / Case	TO-3P-3, SC-65-3	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the 2STC5242 is determined by electrical parameter equivalence and mechanical compatibility. The critical parameters governing substitution are:

Electrical Equivalence Criteria:

Transistor Type: NPN configuration
Current - Collector (Ic) Max: 15 A minimum
Voltage - Collector Emitter Breakdown: 230 V minimum
Power - Max: 150 W minimum
Frequency - Transition: 30 MHz minimum
Operating Temperature: 150°C maximum junction temperature

Mechanical Compatibility Criteria:

Mounting Type: Through Hole
Package / Case: TO-3P-3 or SC-65-3 footprint

Compliance Criteria:

RoHS3 Compliance required
REACH Unaffected status

Substitute parts are classified into two categories: Direct Substitutes (matching all electrical and mechanical parameters) and Similar Substitutes (meeting core electrical requirements with minor parameter variations).

Parameter Comparison

Parameter	2STC5242 (STMicroelectronics)	2SC5200N(S1,E,S) (Toshiba)	2SC5242-O(Q) (Toshiba)	NJW0281G (onsemi)	2SC3263 (Sanken)
Transistor Type	NPN	NPN	NPN	NPN	NPN
Current - Collector (Ic) Max	15 A	15 A	15 A	15 A	15 A
Voltage - Collector Emitter Breakdown (Max)	230 V	230 V	230 V	250 V	230 V
Vce Saturation (Max) @ Ib, Ic	3V @ 800mA, 8A	3V @ 800mA, 8A	3V @ 800mA, 8A	1V @ 500mA, 5A	2V @ 500mA, 5A
Current - Collector Cutoff (Max)	5µA (ICBO)	5µA (ICBO)	5µA (ICBO)	10µA (ICBO)	100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 1A, 5V	80 @ 1A, 5V	80 @ 1A, 5V	75 @ 3A, 5V	40 @ 5A, 4V
Power - Max	150 W	150 W	130 W	150 W	130 W
Frequency - Transition	30 MHz	30 MHz	30 MHz	30 MHz	60 MHz
Operating Temperature (TJ)	150°C	150°C	150°C	-65°C ~ 150°C	150°C
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-3P-3, SC-65-3	TO-3P-3, SC-65-3	TO-3P-3, SC-65-3	TO-3P-3, SC-65-3	TO-3P-3, SC-65-3
Product Status	Obsolete	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	RoHS Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Direct Substitutes (Recommended Priority):

The 2SC5200N(S1,E,S) manufactured by Toshiba Semiconductor and Storage is the primary direct substitute for the 2STC5242. This part maintains identical electrical specifications across all critical parameters: 15 A collector current, 230 V breakdown voltage, 150 W power dissipation, and 30 MHz transition frequency. The device is in active production status with 17,650 units in stock, ensuring long-term availability. ROHS3 compliance and REACH unaffected status align with the original part's regulatory requirements.

The 2SC5242-O(Q) manufactured by Toshiba is a secondary direct substitute with identical electrical characteristics except for reduced maximum power rating (130 W versus 150 W). This part is suitable for applications where the full 150 W power envelope is not required. Active production status and 926 units in stock provide adequate supply. RoHS compliance is confirmed.

Alternative Substitutes (Conditional Use):

The NJW0281G manufactured by onsemi meets all electrical requirements with enhanced specifications: 250 V breakdown voltage (exceeds 230 V requirement), 150 W power rating, and 30 MHz transition frequency. The device features improved saturation characteristics (1V @ 500mA, 5A) and extended operating temperature range (-65°C to 150°C). ROHS3 compliance and 20,794 units in stock support deployment. This part is suitable for applications requiring higher voltage margin or extended temperature operation.

The 2SC3263 manufactured by Sanken Electric USA Inc. is classified as a similar substitute due to parameter variations. While meeting the 15 A current and 230 V voltage requirements, this device exhibits reduced power rating (130 W), higher transition frequency (60 MHz), and lower DC current gain (40 @ 5A, 4V). The elevated collector cutoff current (100µA ICBO) and MSL rating of 1 indicate different manufacturing characteristics. This part is suitable only for applications where the enhanced frequency response is beneficial and power dissipation requirements are reduced.

Product Status Consideration:

The 2STC5242 is obsolete. All identified substitutes are in active production, ensuring continued component availability for system maintenance and new designs.

Frequently Asked Questions (FAQ)

Q: Can the 2SC5200N(S1,E,S) directly replace the 2STC5242 in existing designs?

A: Yes. The 2SC5200N(S1,E,S) maintains identical electrical specifications and mechanical compatibility. No circuit modifications are required. Both devices are rated for 15 A collector current, 230 V breakdown voltage, 150 W power dissipation, and 30 MHz transition frequency. Package footprint compatibility (TO-3P-3, SC-65-3) is confirmed.

Q: What is the difference between the 2SC5242-O(Q) and the 2SC5200N(S1,E,S)?

A: The primary difference is maximum power rating: 2SC5242-O(Q) is rated for 130 W while 2SC5200N(S1,E,S) is rated for 150 W. All other electrical parameters are identical. Selection depends on application power dissipation requirements. Both are manufactured by Toshiba and are in active production.

Q: Is the NJW0281G suitable as a substitute if my application requires higher voltage operation?

A: Yes. The NJW0281G is rated for 250 V breakdown voltage, exceeding the 2STC5242 specification of 230 V. This provides additional voltage margin for applications subject to transient overvoltage conditions. All other electrical parameters meet or exceed the original specification. The device is in active production with high inventory availability.

Q: Why is the 2SC3263 listed as a similar substitute rather than a direct substitute?

A: The 2SC3263 exhibits parameter variations that affect circuit performance. The reduced power rating (130 W versus 150 W), lower DC current gain (40 @ 5A, 4V versus 80 @ 1A, 5V), and elevated collector cutoff current (100µA ICBO versus 5µA ICBO) indicate different electrical characteristics. The enhanced transition frequency (60 MHz versus 30 MHz) may be beneficial in specific applications but represents a design change. Use this part only when these parameter differences are acceptable for the intended application.

Q: Are all substitute parts RoHS compliant?

A: Yes. All identified substitutes maintain RoHS compliance status. The 2SC5200N(S1,E,S), NJW0281G, and 2SC3263 are ROHS3 compliant. The 2SC5242-O(Q) is RoHS compliant. Regulatory requirements for hazardous substance restrictions are satisfied across all alternatives.

Q: What is the package compatibility between the 2STC5242 and substitute parts?

A: All substitute parts utilize the same package footprint: TO-3P-3 or SC-65-3. Through-hole mounting type is consistent across all devices. PCB layout modifications are not required for mechanical compatibility.

Q: Which substitute offers the best long-term availability?

A: The NJW0281G manufactured by onsemi offers the highest inventory level with 20,794 units in stock, followed by the 2SC5200N(S1,E,S) with 17,650 units. Both devices are in active production status, ensuring sustained component availability for future procurement cycles.

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