2STC4468 Equivalent & Substitute Parts

Part Overview

The 2STC4468 is an NPN bipolar junction transistor manufactured by STMicroelectronics, rated for 140 V collector-emitter breakdown voltage and 10 A maximum collector current. This device is packaged in TO-3P and features a maximum power dissipation of 100 W, making it suitable for high-power switching and amplification applications. The 2STC4468 is classified as obsolete, necessitating identification of functionally equivalent substitute components for ongoing design support and production requirements.

Substiute Parts

2STC4468

STMicroelectronicsIn Stock: 271552STC4468 Datasheet

Current PartRFQ

FJA4310OTU

onsemiIn Stock: 3039FJA4310OTU Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the 2STC4468 is determined by strict equivalence across the following critical electrical and mechanical parameters:

Mandatory Matching Parameters:

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 140 V
• Current - Collector (Ic) (Max): 10 A
• Power - Max: 100 W
• Package / Case: TO-3P-3, SC-65-3
• Mounting Type: Through Hole

Acceptable Variation Parameters:

• Frequency - Transition: Equal to or greater than 20 MHz
• DC Current Gain (hFE) (Min): Equal to or greater than 70 @ 3A, 4V
• Operating Temperature (TJ): Equal to or greater than 150°C
• Vce Saturation (Max): Lower values indicate improved performance

The FJA4310OTU from onsemi meets all mandatory matching parameters and demonstrates improved performance in transition frequency (30 MHz vs. 20 MHz) and reduced saturation voltage characteristics.

Parameter Comparison

Engineering Selection Recommendations

The FJA4310OTU is a direct functional equivalent to the 2STC4468 for applications requiring NPN bipolar junction transistors with 140 V breakdown voltage and 10 A collector current ratings in TO-3P packaging.

Both devices are classified as obsolete and maintain ROHS3 compliance. The FJA4310OTU demonstrates superior performance characteristics, including higher transition frequency (30 MHz vs. 20 MHz) and lower saturation voltage, making it suitable for high-speed switching applications.

Component selection between these devices should be based on availability, packaging format (tube vs. standard), and specific application timing requirements. Both devices are through-hole mounted and compatible with identical PCB footprints.

Frequently Asked Questions (FAQ)

Q: Can the FJA4310OTU directly replace the 2STC4468 in existing designs?

A: Yes. Both devices share identical voltage ratings (140 V), current ratings (10 A), power dissipation (100 W), and TO-3P package specifications. The FJA4310OTU provides equivalent or improved electrical performance.

Q: What is the primary difference between these two transistors?

A: The FJA4310OTU operates at higher transition frequency (30 MHz vs. 20 MHz) and exhibits lower saturation voltage (500mV vs. 700mV at specified conditions). These characteristics make the FJA4310OTU more suitable for high-frequency switching applications.

Q: Are both devices suitable for the same thermal environments?

A: Yes. Both devices are rated for maximum junction temperatures of 150°C and are suitable for identical thermal management requirements.

Q: What packaging formats are available for these substitutes?

A: The 2STC4468 is available in standard packaging, while the FJA4310OTU is supplied in tube packaging. Both use identical TO-3P case geometry and through-hole mounting.

Q: Are there compliance differences between these devices?

A: Both devices are ROHS3 compliant and REACH unaffected. No compliance barriers exist for substitution.

Q: How do the leakage current specifications compare?

A: The 2STC4468 specifies 100nA maximum collector cutoff current (ICBO), while the FJA4310OTU specifies 10µA. This difference is acceptable for most applications but should be evaluated for low-power or precision analog circuits.