2ST1480FP Equivalent & Substitute Parts

Part Overview

The 2ST1480FP is an NPN bipolar junction transistor manufactured by STMicroelectronics, designed for general-purpose switching and amplification applications. This device features an 80 V collector-emitter breakdown voltage rating and a maximum collector current of 5 A, housed in a TO-220-3 Full Pack through-hole package. The part is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement continuity.

Substiute Parts

2ST1480FP

STMicroelectronicsIn Stock: 7522ST1480FP Datasheet

Current PartRFQ

KSD1408YTU

Fairchild SemiconductorIn Stock: 13789KSD1408YTU Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the 2ST1480FP is determined by strict equivalence across the following critical parameters:

Voltage Rating: The substitute part must maintain the 80 V collector-emitter breakdown voltage specification to ensure safe operation within the same circuit topology.

Current Capacity: The substitute part must support the required collector current. The 2ST1480FP specifies a maximum of 5 A; substitute parts with equal or greater current ratings are acceptable.

Power Dissipation: The substitute part must maintain the 25 W maximum power rating to ensure thermal compatibility within existing heat-sink designs.

Package Type: The substitute part must use the TO-220-3 Full Pack through-hole package to ensure mechanical and electrical compatibility with existing printed circuit board layouts.

Transistor Polarity: The substitute part must be NPN type to maintain circuit functionality.

The KSD1408YTU meets the voltage, power, and package requirements. However, the maximum collector current is rated at 4 A, which is lower than the 2ST1480FP specification of 5 A. This represents a functional limitation in peak current capacity.

Parameter Comparison

Engineering Selection Recommendations

The KSD1408YTU is an active product available from Fairchild Semiconductor and represents a viable substitute for the obsolete 2ST1480FP in applications where the following conditions are met:

Voltage and Power Compatibility: Both devices share identical 80 V breakdown voltage and 25 W power ratings, ensuring thermal and electrical compatibility within existing circuit designs.

Package Compatibility: Both devices use the TO-220-3 Full Pack through-hole package, permitting direct mechanical substitution on existing printed circuit boards without layout modification.

Current Derating Consideration: The KSD1408YTU maximum collector current rating of 4 A is lower than the 2ST1480FP specification of 5 A. Circuit designs operating at or near the 5 A specification limit require evaluation to confirm operation within the 4 A constraint of the substitute part.

Frequency Performance: The KSD1408YTU transition frequency of 8 MHz is significantly lower than the 2ST1480FP specification of 120 MHz. Applications requiring high-frequency switching performance may experience functional degradation with this substitute.

Compliance Status: The KSD1408YTU is ECCN EAR99 classified and complies with applicable export control regulations. Regulatory compliance verification is required for specific end-use applications.

Frequently Asked Questions (FAQ)

Q: Can the KSD1408YTU directly replace the 2ST1480FP in all applications?

A: Direct substitution is limited by the KSD1408YTU maximum collector current rating of 4 A versus the 2ST1480FP specification of 5 A. Applications operating at peak current levels require circuit evaluation. Additionally, the transition frequency difference (8 MHz versus 120 MHz) may affect high-frequency switching applications.

Q: Are the package dimensions identical between these two parts?

A: Both devices use the TO-220-3 Full Pack through-hole package. Mechanical compatibility is confirmed for printed circuit board mounting without layout modification.

Q: What is the significance of the DC current gain difference between these parts?

A: The 2ST1480FP specifies a minimum DC current gain (hFE) of 170 at 500 mA and 5 V, while the KSD1408YTU specifies 120 under identical conditions. Circuits designed with gain-dependent biasing networks may require resistor value adjustment to achieve equivalent operating points.

Q: How does the saturation voltage difference affect circuit performance?

A: The KSD1408YTU saturation voltage is specified at 1.5 V compared to 1 V for the 2ST1480FP at 300 mA base current and 3 A collector current. This 0.5 V difference increases power dissipation in saturation-mode switching applications and may affect logic-level switching margins.

Q: Is the KSD1408YTU suitable for high-frequency switching applications?

A: The KSD1408YTU transition frequency of 8 MHz is substantially lower than the 2ST1480FP specification of 120 MHz. Applications requiring switching frequencies above 8 MHz may experience performance degradation or require alternative component selection.

Q: What is the product availability status for each part?

A: The 2ST1480FP is classified as obsolete. The KSD1408YTU is an active product with current manufacturing and distribution support, ensuring long-term procurement availability.