2SK4198LS N-Channel MOSFET 600V 5A Equivalent & Substitute Parts

Part Overview

The 2SK4198LS is an N-Channel MOSFET manufactured by onsemi, rated for 600V drain-to-source voltage with 5A continuous drain current at 25°C. The device is packaged in a Through Hole TO-220FI(LS) configuration and is designed for high-voltage switching applications. The 2SK4198LS carries an Obsolete product status, making identification of functionally equivalent substitute components essential for ongoing design support and procurement continuity.

Substiute Parts

2SK4198LS
onsemiIn Stock: 11672SK4198LS Datasheet
2SK4198LS
Current Part
AOTF4N60L
Alpha & Omega Semiconductor Inc.In Stock: 2867AOTF4N60L Datasheet
AOTF4N60L
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STF4LN80K5
STMicroelectronicsIn Stock: 5654STF4LN80K5 Datasheet
STF4LN80K5
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STF4N80K5
STMicroelectronicsIn Stock: 20347STF4N80K5 Datasheet
STF4N80K5
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Key Parameters

Parameter Value Unit
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 5 A
Drive Voltage (Max Rds On) 10 V
Rds On (Max) @ Id, Vgs 2.34 Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 5 V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 14.3 nC @ 10V
Vgs (Max) ±30 V
Input Capacitance (Ciss) (Max) @ Vds 360 pF @ 30V
Power Dissipation (Max) 30 W (Tc)
Operating Temperature (TJ) 150 °C
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the 2SK4198LS is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Mounting Type: Through Hole
  • Package Family: TO-220 series
  • Drain to Source Voltage (Vdss): 600V or higher
  • Continuous Drain Current (Id): Equal to or greater than 5A at 25°C
  • Gate Drive Voltage: 10V
  • Maximum Gate-Source Voltage (Vgs): ±30V
  • Moisture Sensitivity Level: 1 (Unlimited)

The substitute parts listed below meet these criteria with the following considerations:

AOTF4N60L (Alpha & Omega Semiconductor Inc.): Matches 600V Vdss rating with 4A continuous drain current. Rated for 35W power dissipation at case temperature. Active product status with RoHS3 compliance.

STF4LN80K5 (STMicroelectronics): Exceeds voltage rating at 800V Vdss with 3A continuous drain current. Part of MDmesh™ K5 series. Active product status with RoHS3 compliance.

STF4N80K5 (STMicroelectronics): Exceeds voltage rating at 800V Vdss with 3A continuous drain current. Part of SuperMESH5™ series. Active product status with RoHS3 compliance.

Parameter Comparison

Parameter 2SK4198LS (Main) AOTF4N60L STF4LN80K5 STF4N80K5
Manufacturer onsemi Alpha & Omega Semiconductor Inc. STMicroelectronics STMicroelectronics
Product Status Obsolete Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V 600V 800V 800V
Current - Continuous Drain (Id) @ 25°C 5A 4A 3A 3A
Drive Voltage (Max Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 2.34Ω @ 2.5A, 10V 2.2Ω @ 2A, 10V 2.6Ω @ 1A, 10V 2.5Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA 4.5V @ 250µA 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 14.3nC @ 10V 18nC @ 10V 3.7nC @ 10V 10.5nC @ 10V
Vgs (Max) ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 360pF @ 30V 615pF @ 25V 122pF @ 100V 175pF @ 100V
Power Dissipation (Max) 30W (Tc) 35W (Tc) 20W (Tc) 20W (Tc)
Operating Temperature (TJ) 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

AOTF4N60L Selection: The AOTF4N60L is suitable for applications where the 600V voltage rating of the 2SK4198LS is required and continuous drain current requirements do not exceed 4A. This substitute maintains voltage class parity with the original device. The AOTF4N60L carries Active product status and RoHS3 compliance, supporting long-term design continuity. Power dissipation capability is rated at 35W (Tc), exceeding the 30W (Tc) specification of the 2SK4198LS. The device is available in high inventory quantities (2789 pcs).

STF4LN80K5 Selection: The STF4LN80K5 is applicable for designs where higher voltage margin is acceptable and continuous drain current requirements do not exceed 3A. The 800V Vdss rating provides additional voltage headroom beyond the 600V specification of the 2SK4198LS. This device is part of the MDmesh™ K5 series and carries Active product status with RoHS3 compliance. Gate charge is significantly reduced at 3.7nC compared to 14.3nC of the original part, resulting in lower switching losses. Inventory availability is substantial (5558 pcs).

STF4N80K5 Selection: The STF4N80K5 is applicable for designs where higher voltage margin is acceptable and continuous drain current requirements do not exceed 3A. The 800V Vdss rating provides additional voltage headroom beyond the 600V specification of the 2SK4198LS. This device is part of the SuperMESH5™ series and carries Active product status with RoHS3 compliance. Gate charge is reduced at 10.5nC compared to 14.3nC of the original part. Inventory availability is highest among all substitutes (20250 pcs).

All three substitute parts share identical electrical characteristics with respect to gate-source voltage limits (±30V), moisture sensitivity (MSL 1), REACH compliance, and ECCN classification. All maintain Through Hole mounting in TO-220-3 Full Pack configuration.

Frequently Asked Questions (FAQ)

Q: Can the AOTF4N60L directly replace the 2SK4198LS in all applications?

A: The AOTF4N60L is suitable for applications where continuous drain current does not exceed 4A. The 2SK4198LS is rated for 5A continuous drain current. If the application requires the full 5A rating, the AOTF4N60L is not a direct replacement. Both devices share the same 600V Vdss rating and TO-220-3 package configuration.

Q: Why do the STF4LN80K5 and STF4N80K5 have lower continuous drain current ratings than the 2SK4198LS?

A: The STF4LN80K5 and STF4N80K5 are rated for 3A continuous drain current compared to the 5A rating of the 2SK4198LS. These devices are designed for higher voltage operation (800V Vdss) and employ different semiconductor technology (MDmesh™ K5 and SuperMESH5™ respectively). The lower current rating reflects the design trade-off between voltage capability and current handling at the specified case temperature.

Q: Are all substitute parts available in the same package as the 2SK4198LS?

A: All substitute parts are packaged in TO-220-3 Full Pack configuration, which is mechanically compatible with the 2SK4198LS TO-220FI(LS) package. The TO-220 family maintains consistent pin configuration and mounting footprint across all listed devices.

Q: What is the significance of the gate charge differences between these devices?

A: Gate charge (Qg) affects switching speed and driver circuit requirements. The 2SK4198LS has a gate charge of 14.3nC at 10V. The STF4LN80K5 has significantly lower gate charge at 3.7nC, while the STF4N80K5 has 10.5nC. Lower gate charge results in faster switching transitions and reduced power dissipation in the gate driver circuit. Higher gate charge (AOTF4N60L at 18nC) requires more driver current but may provide improved noise immunity.

Q: Can I use a substitute part rated for higher voltage (800V) in a circuit designed for 600V operation?

A: Yes. The STF4LN80K5 and STF4N80K5, both rated for 800V Vdss, are suitable for circuits designed for 600V operation. The higher voltage rating provides additional safety margin. However, the lower continuous drain current ratings (3A versus 5A) must be considered in the application context.

Q: What is the difference between the two STMicroelectronics substitutes?

A: Both STF4LN80K5 and STF4N80K5 share identical electrical ratings (800V, 3A, 20W). The primary differences are the semiconductor series designation (MDmesh™ K5 versus SuperMESH5™) and gate charge specification (3.7nC versus 10.5nC). The STF4N80K5 has higher inventory availability (20250 pcs versus 5558 pcs).

Q: Are all substitute parts RoHS compliant?

A: The AOTF4N60L, STF4LN80K5, and STF4N80K5 are all RoHS3 compliant. The 2SK4198LS does not specify RoHS status in the provided data. All substitute parts maintain REACH Unaffected status, consistent with the original device.

Q: What is the operating temperature range for each device?

A: The 2SK4198LS specifies a maximum junction temperature (TJ) of 150°C without a minimum temperature specification. The AOTF4N60L, STF4LN80K5, and STF4N80K5 all specify an operating temperature range of -55°C to 150°C (TJ), providing defined low-temperature operation capability.

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