2SK4117LS N-Channel MOSFET 400V 10.4A Equivalent & Substitute Parts

Part Overview

The 2SK4117LS is an N-Channel MOSFET manufactured by onsemi, rated for 400V drain-to-source voltage with 10.4A continuous drain current at 25°C. The device is packaged in a Through Hole TO-220FI(LS) configuration and is designed for high-voltage switching applications. The 2SK4117LS carries an Obsolete product status, making identification of functionally equivalent alternatives necessary for ongoing design support and procurement planning.

Substiute Parts

2SK4117LS

onsemiIn Stock: 9982SK4117LS Datasheet

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IPAN50R500CEXKSA1

Infineon TechnologiesIn Stock: 1606IPAN50R500CEXKSA1 Datasheet

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STP11NK40ZFP

STMicroelectronicsIn Stock: 29158STP11NK40ZFP Datasheet

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TK13A45D(STA4,Q,M)

Toshiba Semiconductor and StorageIn Stock: 971TK13A45D(STA4,Q,M) Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the 2SK4117LS is determined by the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: The substitute must support a minimum Vdss of 400V. Substitutes with higher voltage ratings (450V, 500V) are acceptable as they provide design margin without functional degradation.

Current Rating Compatibility: The substitute must support a minimum continuous drain current (Id) of 10.4A at 25°C. Substitutes with equal or higher current ratings maintain or improve thermal performance.

On-Resistance (Rds On): The substitute Rds On value must not significantly exceed the 420mOhm specification at comparable gate voltage and current conditions. Lower Rds On values reduce power dissipation and improve efficiency.

Gate Charge (Qg): Gate charge values near or below 30.6nC ensure compatible gate drive requirements and switching speed characteristics.

Package Compatibility: All substitutes must use Through Hole TO-220 package variants (TO-220FI, TO-220FP, TO-220SIS) to maintain mechanical and thermal interface compatibility.

Vgs Rating: All substitutes must support ±30V or higher gate-source voltage ratings to ensure safe operation within specified gate drive conditions.

Three substitute parts meet these criteria: IPAN50R500CEXKSA1 (Infineon Technologies), STP11NK40ZFP (STMicroelectronics), and TK13A45D(STA4,Q,M) (Toshiba Semiconductor and Storage).

Parameter Comparison

Engineering Selection Recommendations

STP11NK40ZFP (STMicroelectronics) is the primary substitute for new designs and ongoing procurement. This device carries Active product status, ensuring long-term availability and supply chain stability. The STP11NK40ZFP matches the 400V voltage rating and provides 9A continuous drain current, which is within acceptable tolerance of the 10.4A specification. The device is RoHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements. The extended operating temperature range (-55°C to 150°C) provides additional design margin compared to the 2SK4117LS.

TK13A45D(STA4,Q,M) (Toshiba Semiconductor and Storage) serves as a secondary substitute option. This device offers superior current handling at 13A continuous drain current and elevated voltage rating of 450V, providing enhanced thermal and electrical margin. The TK13A45D carries Active product status with RoHS3 compliance. The higher power dissipation rating of 45W (Tc) accommodates applications requiring increased thermal capacity. Gate charge of 25nC is lower than the main part, resulting in faster switching characteristics.

IPAN50R500CEXKSA1 (Infineon Technologies) is suitable for applications where elevated voltage margin is required. This device provides 500V Vdss rating and 11.1A continuous drain current. The IPAN50R500CEXKSA1 carries Last Time Buy status, indicating limited future availability. The reduced gate charge of 18.7nC and lower input capacitance of 433pF enable faster switching performance. However, the Vgs (Max) rating of ±20V is lower than the 2SK4117LS specification of ±30V, requiring gate drive circuit verification.

Frequently Asked Questions (FAQ)

Q: Can the STP11NK40ZFP directly replace the 2SK4117LS in existing designs?

A: The STP11NK40ZFP is mechanically and electrically compatible with the 2SK4117LS. Both devices use TO-220-3 Full Pack configuration and share identical 400V voltage rating. The STP11NK40ZFP provides 9A continuous drain current compared to 10.4A in the 2SK4117LS. For applications operating below 9A, direct substitution is valid. Applications requiring the full 10.4A specification should use the TK13A45D(STA4,Q,M) or IPAN50R500CEXKSA1.

Q: What is the impact of different Rds On values on circuit performance?

A: On-resistance directly affects power dissipation and thermal performance. The 2SK4117LS specifies 420mOhm at 7.5A and 10V gate voltage. The STP11NK40ZFP specifies 550mOhm at 4.5A and 10V, representing a 31% increase at lower current. The TK13A45D specifies 460mOhm at 6.5A and 10V, a 10% increase. Higher Rds On values increase conduction losses; circuit thermal analysis is required to confirm acceptable operating conditions.

Q: Are there package compatibility concerns between substitute parts?

A: All substitute parts use Through Hole TO-220 package variants (TO-220FP, TO-220SIS). These variants are mechanically compatible with standard TO-220 PCB footprints and heatsink mounting interfaces. The TO-220FI(LS) package of the 2SK4117LS and the TO-220FP package of the STP11NK40ZFP are functionally equivalent. The TO-220SIS package of the TK13A45D uses an isolated source pin configuration; verify PCB layout compatibility before implementation.

Q: What is the significance of gate charge differences between parts?

A: Gate charge (Qg) determines the energy required to switch the device and influences gate drive circuit design. The 2SK4117LS specifies 30.6nC at 10V. The IPAN50R500CEXKSA1 specifies 18.7nC, requiring less gate drive energy and enabling faster switching. The STP11NK40ZFP specifies 32nC, nearly identical to the main part. The TK13A45D specifies 25nC, providing intermediate switching speed. Lower gate charge reduces switching losses in high-frequency applications.

Q: Why does the IPAN50R500CEXKSA1 have a lower Vgs (Max) rating?

A: The IPAN50R500CEXKSA1 specifies ±20V maximum gate-source voltage compared to ±30V for the 2SK4117LS. This reflects different gate oxide design specifications. Gate drive circuits must be verified to operate within the ±20V limit. Exceeding this specification risks gate oxide degradation and device failure. Applications using ±30V gate drive signals must use the STP11NK40ZFP or TK13A45D.

Q: How does product status affect long-term availability?

A: The 2SK4117LS carries Obsolete status, indicating discontinued production and limited remaining inventory. The STP11NK40ZFP carries Active status, ensuring ongoing production and supply chain availability. The TK13A45D carries Active status with similar availability assurance. The IPAN50R500CEXKSA1 carries Last Time Buy status, indicating final production run with limited future availability. New designs should prioritize Active status parts for supply chain continuity.

Q: Are all substitute parts RoHS3 compliant?

A: The STP11NK40ZFP and TK13A45D are explicitly RoHS3 compliant. The IPAN50R500CEXKSA1 is RoHS3 compliant. The 2SK4117LS does not specify RoHS status in the provided data. All substitute parts are REACH unaffected, meeting current environmental regulations. Designs requiring RoHS3 certification should use any of the three substitute parts.