2SK4099LS N-Channel 600V 6.9A MOSFET Equivalent & Substitute Parts

Part Overview

The 2SK4099LS is an N-Channel MOSFET manufactured by onsemi, rated for 600V drain-to-source voltage with a continuous drain current of 6.9A at 25°C. The device is packaged in a Through Hole TO-220FI(LS) configuration and is designed for high-voltage switching applications. The 2SK4099LS is classified as obsolete, making identification of equivalent and substitute parts essential for design continuity and procurement planning. Substitute parts must maintain compatibility across critical electrical parameters including voltage rating, current capacity, on-resistance characteristics, and thermal performance while accommodating the Through Hole TO-220 package family.

Substiute Parts

2SK4099LS

onsemiIn Stock: 11422SK4099LS Datasheet

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IPA60R950C6XKSA1

Infineon TechnologiesIn Stock: 1179IPA60R950C6XKSA1 Datasheet

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R6004ENX

Rohm SemiconductorIn Stock: 4283R6004ENX Datasheet

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SIHF7N60E-E3

Vishay SiliconixIn Stock: 1076SIHF7N60E-E3 Datasheet

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STF6N60M2

STMicroelectronicsIn Stock: 15567STF6N60M2 Datasheet

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STF7N60M2

STMicroelectronicsIn Stock: 15446STF7N60M2 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the 2SK4099LS are selected based on strict electrical and mechanical compatibility criteria. All substitute candidates must satisfy the following requirements:

Mandatory Matching Parameters:

• Drain to Source Voltage (Vdss): 600V (exact match required)
• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Mounting Type: Through Hole
• Package Family: TO-220-3 Full Pack variants

Functional Compatibility Parameters:

• Continuous Drain Current (Id) @ 25°C: Minimum 4.0A (accommodates applications within the 2SK4099LS current envelope)
• Drive Voltage: 10V (standard gate drive voltage)
• Operating Temperature: Maximum 150°C (TJ)
• Rds On (Max) @ 10V: Comparable on-resistance characteristics for thermal performance equivalence

The five substitute parts listed below meet all mandatory criteria and provide functional equivalence across the specified electrical parameter ranges. Substitution is determined by the ability to operate within the same voltage class, current handling capability, and thermal dissipation envelope while maintaining Through Hole TO-220 package compatibility.

Parameter Comparison

Engineering Selection Recommendations

Product Status Considerations:

The 2SK4099LS is classified as obsolete. All five substitute parts listed provide active or equivalent alternatives with current manufacturing status or established supply chains:

• IPA60R950C6XKSA1 (Infineon): Obsolete status; CoolMOS™ series technology; ROHS3 compliant
• R6004ENX (Rohm Semiconductor): Active product status; ROHS3 compliant; highest inventory availability (4205 pcs)
• SIHF7N60E-E3 (Vishay Siliconix): Active product status; ROHS3 compliant; current drain rating closest to 2SK4099LS (7A)
• STF6N60M2 (STMicroelectronics): Active product status; MDmesh™ II Plus series; ROHS3 compliant; highest inventory (15465 pcs)
• STF7N60M2 (STMicroelectronics): Active product status; MDmesh™ II Plus series; ROHS3 compliant; high inventory (15426 pcs)

Compliance Status:

All substitute parts carry ROHS3 compliance and REACH Unaffected status, matching the regulatory posture of the 2SK4099LS. Moisture Sensitivity Level (MSL) is 1 (Unlimited) across all parts, indicating no moisture-related handling restrictions.

Current Capacity Matching:

For applications requiring continuous drain current at or near the 2SK4099LS rating of 6.9A, the SIHF7N60E-E3 (7A) provides the closest electrical match. For applications operating at lower current levels (4–5A), the STF6N60M2, STF7N60M2, R6004ENX, and IPA60R950C6XKSA1 are suitable alternatives.

Thermal Performance:

The 2SK4099LS specifies 35W maximum power dissipation at Tc. Substitute parts with comparable or higher thermal ratings (R6004ENX at 40W, SIHF7N60E-E3 at 31W) support equivalent thermal management. Parts with lower ratings (STF6N60M2 and STF7N60M2 at 20W each) require thermal design verification for high-power applications.

On-Resistance Characteristics:

The SIHF7N60E-E3 exhibits superior on-resistance performance (600 mOhm @ 3.5A, 10V), resulting in lower conduction losses. The STF6N60M2 and STF7N60M2 provide moderate on-resistance values suitable for general switching applications. The IPA60R950C6XKSA1 and R6004ENX maintain on-resistance characteristics within acceptable ranges for the 600V voltage class.

Frequently Asked Questions (FAQ)

Q: Can the 2SK4099LS be directly replaced with any of the listed substitute parts?

A: Direct replacement is possible only when the application circuit operates within the electrical and thermal envelope of the selected substitute part. All listed parts share the same 600V voltage rating, N-Channel MOSFET technology, and Through Hole TO-220 package family. However, differences in continuous drain current rating, on-resistance, gate charge, and power dissipation must be evaluated against specific circuit requirements. Pin-to-pin compatibility is maintained across all TO-220-3 Full Pack variants.

Q: Which substitute part is best for high-current applications?

A: The SIHF7N60E-E3 (Vishay Siliconix) provides the highest continuous drain current rating at 7A, closest to the 2SK4099LS specification of 6.9A. This part also exhibits the lowest on-resistance (600 mOhm @ 3.5A, 10V), resulting in reduced conduction losses and improved thermal performance in high-current switching scenarios.

Q: Are there differences in gate drive requirements between the 2SK4099LS and substitute parts?

A: All parts are specified for 10V drive voltage operation. Threshold voltage (Vgs(th)) varies slightly across the substitute parts, ranging from 3.5V to 5V. Gate charge (Qg) differs significantly, with values ranging from 8 nC (STF6N60M2, STF7N60M2) to 40 nC (SIHF7N60E-E3). Lower gate charge reduces driver power dissipation and switching losses. Existing gate drive circuits designed for the 2SK4099LS will operate with all substitute parts, though optimization may be possible with lower gate charge alternatives.

Q: What is the impact of on-resistance differences on circuit performance?

A: On-resistance (Rds On) directly affects conduction losses and thermal dissipation. The SIHF7N60E-E3 (600 mOhm) provides superior efficiency compared to the 2SK4099LS (940 mOhm). The STF7N60M2 (950 mOhm) and IPA60R950C6XKSA1 (950 mOhm) maintain similar on-resistance to the original part. The STF6N60M2 (1.2 Ohm) and R6004ENX (980 mOhm) exhibit slightly higher on-resistance. For applications sensitive to conduction losses, the SIHF7N60E-E3 is preferred. For drop-in replacement with minimal circuit redesign, the STF7N60M2 or IPA60R950C6XKSA1 are suitable.

Q: How do input capacitance differences affect switching performance?

A: Input capacitance (Ciss) influences gate charge requirements and switching speed. The 2SK4099LS specifies 750 pF @ 30V. Substitute parts range from 232 pF (STF6N60M2) to 680 pF (SIHF7N60E-E3). Lower input capacitance reduces gate charge and enables faster switching transitions, reducing switching losses. Higher input capacitance increases gate charge requirements but may provide improved noise immunity. Selection depends on the specific switching frequency and gate driver capability of the application circuit.

Q: Which substitute parts are recommended for new designs?

A: For new designs, active product status parts are preferred: R6004ENX (Rohm), SIHF7N60E-E3 (Vishay), STF6N60M2 (STMicroelectronics), and STF7N60M2 (STMicroelectronics). These parts offer established supply chains and long-term availability. The STF6N60M2 and STF7N60M2 provide the highest inventory levels and represent current-generation MDmesh™ II Plus technology from STMicroelectronics.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All five substitute parts carry RoHS3 compliance certification and REACH Unaffected status, matching the regulatory compliance of the 2SK4099LS. Moisture Sensitivity Level (MSL) is 1 (Unlimited) for all parts, indicating no special moisture handling requirements during storage or assembly.

Q: What is the maximum gate voltage rating for each substitute part?

A: The 2SK4099LS specifies Vgs (Max) of ±30V. Substitute parts vary: IPA60R950C6XKSA1 and R6004ENX are rated to ±20V, SIHF7N60E-E3 and the STMicroelectronics parts (STF6N60M2, STF7N60M2) are rated to ±25V and ±25V respectively. For applications using gate voltages above ±20V, the SIHF7N60E-E3 or STMicroelectronics alternatives are required. Standard gate drive circuits operating at ±15V or lower are compatible with all substitute parts.

Q: Can substitute parts be mixed in the same circuit board design?

A: Mixing substitute parts on the same circuit board is not recommended due to variations in on-resistance, gate charge, and threshold voltage. These differences can result in unequal current sharing in parallel configurations and timing mismatches in sequential switching applications. If multiple parts are required, select a single substitute part type for all positions to ensure consistent circuit behavior and thermal distribution.