2SK4098FS N-Channel MOSFET 600V 6A Equivalent & Substitute Parts

Part Overview

The 2SK4098FS is an N-Channel MOSFET manufactured by onsemi, rated for 600V drain-to-source voltage with 6A continuous drain current at 25°C. The device is housed in a TO-220-3 Full Pack through-hole package and is designed for power switching applications requiring moderate voltage and current ratings.

The 2SK4098FS carries an Obsolete product status. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this component.

Substiute Parts

2SK4098FS
onsemiIn Stock: 36422SK4098FS Datasheet
2SK4098FS
Current Part
FQPF7N60
onsemiIn Stock: 22829FQPF7N60 Datasheet
FQPF7N60
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IPA80R900P7XKSA1
Infineon TechnologiesIn Stock: 914IPA80R900P7XKSA1 Datasheet
IPA80R900P7XKSA1
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STF7N60M2
STMicroelectronicsIn Stock: 15446STF7N60M2 Datasheet
STF7N60M2
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Key Parameters

Parameter Value Unit
Manufacturer Part Number 2SK4098FS
Manufacturer onsemi
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 6 A (Tc)
Rds On (Max) @ Id, Vgs 1.1 Ohm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs 23.5 nC @ 10V
Vgs (Max) ±30 V
Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 30V
Power Dissipation (Max) 2 W
Operating Temperature 150 °C
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Product Status Obsolete

Substitute Part Grouping Explanation

Substitution of the 2SK4098FS is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

  • Drain-to-Source Voltage (Vdss): Must equal or exceed 600V
  • Continuous Drain Current (Id) @ 25°C: Must equal or exceed 6A
  • Mounting Type: Through Hole
  • Package Type: TO-220-3 Full Pack
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)

Secondary Compatibility Parameters:

  • Gate Charge (Qg): Lower values indicate faster switching
  • On-State Resistance (Rds On): Lower values reduce conduction losses
  • Input Capacitance (Ciss): Affects gate drive requirements
  • Maximum Gate Voltage (Vgs Max): Must accommodate driver circuit voltage levels
  • Operating Temperature Range: Must support application thermal requirements

The three substitute parts identified (FQPF7N60, IPA80R900P7XKSA1, STF7N60M2) meet the primary substitution criteria with varying performance characteristics in secondary parameters.

Parameter Comparison

Parameter 2SK4098FS (Main) FQPF7N60 IPA80R900P7XKSA1 STF7N60M2
Manufacturer onsemi onsemi Infineon Technologies STMicroelectronics
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Vdss (V) 600 600 800 600
Id @ 25°C (A) 6 4.3 6 5
Rds On (Max) (Ohm) 1.1 @ 3.5A, 10V 1 @ 2.2A, 10V 0.9 @ 2.2A, 10V 0.95 @ 2.5A, 10V
Qg (Max) (nC) 23.5 @ 10V 38 @ 10V 15 @ 10V 8.8 @ 10V
Vgs (Max) (V) ±30 ±30 ±20 ±25
Ciss (Max) (pF) 600 @ 30V 1430 @ 25V 350 @ 500V 271 @ 100V
Power Dissipation (Max) (W) 2 48 26 20
Operating Temperature (°C) 150 -55 ~ 150 -55 ~ 150 -55 ~ 150
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack
Product Status Obsolete Obsolete Active Active
RoHS Status Not Specified ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

FQPF7N60 (onsemi)

The FQPF7N60 maintains identical voltage rating (600V) and package configuration (TO-220-3 Full Pack) as the 2SK4098FS. However, the continuous drain current rating is reduced to 4.3A, which is below the 6A requirement of the main part. This substitute is suitable only for applications where the actual operating current does not exceed 4.3A. The FQPF7N60 carries Obsolete product status, limiting its long-term availability. ROHS3 compliance is confirmed.

IPA80R900P7XKSA1 (Infineon Technologies)

The IPA80R900P7XKSA1 is a CoolMOS™ P7 series device that exceeds the primary substitution criteria with an 800V Vdss rating and 6A continuous drain current matching the main part specification. The device is housed in a TO-220-3 Full Pack package compatible with the 2SK4098FS footprint. This part carries Active product status, ensuring ongoing availability and supply chain support. The lower on-state resistance (0.9 Ohm) and reduced gate charge (15 nC) provide improved switching performance. Operating temperature range extends to -55°C, exceeding the main part specification. ROHS3 compliance and REACH Unaffected status are confirmed. The maximum gate voltage is ±20V, which is lower than the main part (±30V) and must be verified against driver circuit specifications.

STF7N60M2 (STMicroelectronics)

The STF7N60M2 is an MDmesh™ II Plus series device with 600V Vdss rating and 5A continuous drain current. The device meets the voltage requirement and approaches the current requirement of the main part. The TO-220-3 Full Pack package is compatible with the 2SK4098FS footprint. This part carries Active product status, ensuring long-term availability. The lower on-state resistance (0.95 Ohm) and significantly reduced gate charge (8.8 nC) provide superior switching characteristics. Operating temperature range extends to -55°C. ROHS3 compliance and REACH Unaffected status are confirmed. The maximum gate voltage is ±25V, which is lower than the main part (±30V) and must be verified against driver circuit specifications.

Recommendation Summary

For applications requiring the full 6A continuous drain current specification, the IPA80R900P7XKSA1 is the primary substitute, offering Active product status, superior performance characteristics, and extended voltage margin. The STF7N60M2 is suitable for applications where continuous drain current can be limited to 5A or below, offering improved switching performance and Active product status. The FQPF7N60 is not recommended due to reduced current rating and Obsolete product status.

Frequently Asked Questions (FAQ)

Q: Can the FQPF7N60 be used as a direct replacement for the 2SK4098FS?

A: The FQPF7N60 shares the same voltage rating (600V) and package configuration (TO-220-3 Full Pack) as the 2SK4098FS. However, the continuous drain current rating is 4.3A, which is below the 6A specification of the main part. The FQPF7N60 is suitable only for applications where the actual operating current does not exceed 4.3A at 25°C.

Q: What is the primary advantage of the IPA80R900P7XKSA1 over the 2SK4098FS?

A: The IPA80R900P7XKSA1 provides a higher drain-to-source voltage rating (800V versus 600V), matching the 6A continuous drain current of the main part. The device exhibits lower on-state resistance (0.9 Ohm versus 1.1 Ohm) and significantly reduced gate charge (15 nC versus 23.5 nC), resulting in improved switching efficiency and reduced gate drive power requirements. The part carries Active product status, ensuring ongoing supply availability.

Q: Are there package compatibility concerns when substituting these parts?

A: All three substitute parts are housed in TO-220-3 Full Pack packages, which are mechanically and electrically compatible with the 2SK4098FS footprint. Through-hole mounting characteristics are identical across all parts. No PCB layout modifications are required for package substitution.

Q: What is the significance of the maximum gate voltage (Vgs Max) difference between the main part and substitutes?

A: The 2SK4098FS specifies ±30V maximum gate voltage, while the IPA80R900P7XKSA1 and STF7N60M2 specify ±25V and ±20V respectively. The gate voltage applied by the driver circuit must not exceed the device specification. If the existing driver circuit applies gate voltages exceeding ±20V or ±25V, the corresponding substitute part cannot be used without driver circuit modification.

Q: How do the gate charge specifications affect circuit performance?

A: Gate charge (Qg) determines the amount of charge required to switch the device from off to on state. Lower gate charge values reduce the energy required for switching and allow faster switching transitions. The STF7N60M2 (8.8 nC) and IPA80R900P7XKSA1 (15 nC) exhibit significantly lower gate charge than the main part (23.5 nC), enabling higher switching frequencies and reduced gate drive power dissipation in applications utilizing pulse-width modulation or high-frequency switching.

Q: What is the impact of on-state resistance (Rds On) on thermal performance?

A: On-state resistance directly affects conduction losses during the on-state period. Lower Rds On values reduce power dissipation and heat generation. The substitute parts exhibit lower Rds On values (0.9 to 1.0 Ohm) compared to the main part (1.1 Ohm), resulting in reduced thermal stress and improved efficiency in continuous conduction applications.

Q: Why is product status (Active versus Obsolete) important for component selection?

A: Active product status indicates ongoing manufacturer support, continued production, and long-term supply availability. Obsolete parts face declining inventory and eventual discontinuation. For new designs or long-term production requirements, Active status parts (IPA80R900P7XKSA1 and STF7N60M2) are preferred over Obsolete parts (2SK4098FS and FQPF7N60) to ensure sustained supply chain support.

Q: Are there compliance or regulatory differences between the substitute parts?

A: All parts carry REACH Unaffected status and ROHS3 compliance certifications. The IPA80R900P7XKSA1 and STF7N60M2 explicitly confirm ROHS3 compliance, while the main part and FQPF7N60 do not specify RoHS status in the provided data. For applications subject to RoHS regulations, the IPA80R900P7XKSA1 and STF7N60M2 are confirmed compliant.

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