2SK4089LS N-Channel MOSFET 650V 8.5A Equivalent & Substitute Parts

Part Overview

The 2SK4089LS is an N-Channel MOSFET manufactured by onsemi, rated for 650V drain-to-source voltage with 8.5A continuous drain current at 25°C. The device is packaged in a through-hole TO-220FI(LS) configuration and is designed for high-voltage switching applications. The 2SK4089LS carries an obsolete product status, making identification of functionally equivalent alternatives necessary for ongoing design support and procurement continuity.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	650	V
Continuous Drain Current (Id) @ 25°C	8.5	A (Tc)
On-State Resistance (Rds On) @ 6A, 10V	720	mOhm
Gate Charge (Qg) @ 10V	45.4	nC
Gate-Source Voltage (Vgs Max)	±30	V
Input Capacitance (Ciss) @ 30V	1200	pF
Power Dissipation (Max)	40	W (Tc)
Operating Temperature (TJ)	150	°C
Mounting Type	Through Hole	—
Package	TO-220-3 Full Pack	—
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution of the 2SK4089LS is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Minimum 650V required to maintain voltage rating equivalence
Continuous Drain Current (Id): Minimum 8.5A at 25°C to support load requirements
On-State Resistance (Rds On): Maximum 720mOhm at rated conditions to ensure thermal performance
Gate-Source Voltage (Vgs Max): ±30V or greater to maintain gate drive compatibility
Mounting Type: Through Hole configuration required
Package: TO-220-3 Full Pack form factor

Secondary Compatibility Parameters:

Operating Temperature: 150°C maximum junction temperature
Power Dissipation: Thermal capability at or above 40W (Tc)
Gate Charge (Qg): Lower values indicate improved switching performance
Input Capacitance (Ciss): Affects gate drive requirements

Substitute parts are grouped based on voltage rating alignment and current capacity. Parts with Vdss below 650V are classified as lower-voltage alternatives suitable for reduced-voltage applications. Parts with Vdss at or above 650V are classified as direct or enhanced-voltage equivalents.

Parameter Comparison

Parameter	2SK4089LS (Main)	STF11N65M2	STF10N95K5	STP10NK70ZFP	R6008ANX	R6007ENX	TK6A60W,S4VX
Manufacturer	onsemi	STMicroelectronics	STMicroelectronics	STMicroelectronics	Rohm Semiconductor	Rohm Semiconductor	Toshiba Semiconductor
Vdss (V)	650	650	950	700	600	600	600
Id @ 25°C (A)	8.5	7	8	8.6	8	7	6.2
Rds On (mOhm)	720 @ 6A, 10V	670 @ 3.5A, 10V	800 @ 4A, 10V	850 @ 4.5A, 10V	800 @ 4A, 10V	620 @ 2.4A, 10V	750 @ 3.1A, 10V
Qg @ 10V (nC)	45.4	12.5	22	90	21	20	12
Vgs Max (V)	±30	±25	±30	±30	±30	±20	±30
Ciss @ Vds (pF)	1200 @ 30V	410 @ 100V	630 @ 100V	2000 @ 25V	680 @ 25V	390 @ 25V	390 @ 300V
Power Dissipation (W)	40 (Tc)	25 (Tc)	30 (Tc)	35 (Tc)	50 (Tc)	40 (Tc)	30 (Tc)
Operating Temp (°C)	150	-55 to 150	-55 to 150	-55 to 150	150	150	150
Package	TO-220FI(LS)	TO-220FP	TO-220FP	TO-220FP	TO-220FM	TO-220FM	TO-220SIS
Product Status	Obsolete	Active	Active	Active	Not For New Designs	Active	Active
RoHS Status	—	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Direct Voltage Rating Equivalents (650V Class):

The STF11N65M2 from STMicroelectronics provides the closest electrical match to the 2SK4089LS. Both devices share a 650V Vdss rating and operate at 150°C maximum junction temperature. The STF11N65M2 is actively supported with ROHS3 compliance and carries the MDmesh™ II Plus series designation. This part is suitable for direct substitution in applications where the 7A continuous drain current meets system requirements. The lower gate charge (12.5 nC versus 45.4 nC) and reduced input capacitance (410 pF versus 1200 pF) provide improved switching characteristics.

Enhanced Voltage Rating Alternative (700V Class):

The STP10NK70ZFP from STMicroelectronics offers a 700V Vdss rating with 8.6A continuous drain current, providing voltage margin above the 2SK4089LS specification. This device is actively supported with ROHS3 compliance and SuperMESH™ series technology. The higher gate charge (90 nC) and input capacitance (2000 pF) require gate drive circuit evaluation. This part is suitable for applications requiring enhanced voltage headroom.

Higher Voltage Rating Alternative (950V Class):

The STF10N95K5 from STMicroelectronics provides a 950V Vdss rating with 8A continuous drain current and 30W power dissipation. This device is actively supported with ROHS3 compliance and SuperMESH5™ series technology. The extended voltage rating accommodates applications with higher transient voltage stress. Extended operating temperature range (-55°C to 150°C) provides thermal flexibility.

Lower Voltage Alternatives (600V Class):

The R6008ANX and R6007ENX from Rohm Semiconductor, and TK6A60W,S4VX from Toshiba Semiconductor provide 600V Vdss ratings. These devices are suitable for applications where 600V voltage rating is acceptable. The R6008ANX carries "Not For New Designs" status and should be avoided for new development. The R6007ENX and TK6A60W,S4VX are actively supported with ROHS3 compliance. The R6008ANX offers 8A continuous drain current and 50W power dissipation, providing thermal capability above the main part specification.

Product Status Considerations:

The 2SK4089LS is classified as obsolete. For new designs, selection should prioritize active product status. The STF11N65M2, STF10N95K5, STP10NK70ZFP, R6007ENX, and TK6A60W,S4VX all carry active product status. The R6008ANX carries "Not For New Designs" status and is not recommended for new development initiatives.

Compliance and Certification:

All recommended substitute parts carry ROHS3 compliance and REACH Unaffected status, matching the regulatory profile of the main part. All parts are classified under ECCN EAR99 and HTSUS 8541.29.0095.

Frequently Asked Questions (FAQ)

Q: Can the STF11N65M2 directly replace the 2SK4089LS in existing designs?

A: The STF11N65M2 shares the same 650V Vdss rating and 150°C operating temperature as the 2SK4089LS. However, the continuous drain current is rated at 7A versus 8.5A. Substitution is valid only if the application current requirement does not exceed 7A. The TO-220FP package is mechanically compatible with TO-220FI(LS) pinout. Gate drive circuits should be evaluated due to the significantly lower gate charge (12.5 nC versus 45.4 nC).

Q: What is the difference between TO-220FI(LS), TO-220FP, TO-220FM, and TO-220SIS packages?

A: All four package variants are through-hole TO-220-3 configurations with identical pin assignments and mechanical footprints. The suffix designations (FI, FP, FM, SIS) indicate manufacturer-specific package variants and internal lead frame designs. These variants are mechanically and electrically interchangeable for PCB mounting purposes. Thermal performance may vary slightly based on internal construction.

Q: Why does the STP10NK70ZFP have significantly higher gate charge (90 nC) compared to the 2SK4089LS (45.4 nC)?

A: Gate charge is determined by the internal capacitance structure and die size of the MOSFET. The STP10NK70ZFP uses SuperMESH™ technology optimized for 700V operation, which results in a larger die and higher capacitance. Higher gate charge requires longer switching times and increased gate drive current. Gate drive circuit redesign may be necessary if switching frequency is critical to application performance.

Q: Are the 600V-rated parts (R6008ANX, R6007ENX, TK6A60W,S4VX) suitable substitutes for the 650V-rated 2SK4089LS?

A: The 600V-rated parts operate at a lower voltage rating than the 2SK4089LS. These parts are suitable only for applications where the maximum operating voltage does not exceed 600V. If the application requires 650V voltage margin, these parts do not meet the specification and should not be used as substitutes.

Q: What does "Not For New Designs" status mean for the R6008ANX?

A: "Not For New Designs" indicates that the manufacturer has discontinued active development and support for this part. While the R6008ANX remains available in inventory (15,126 pieces), it is not recommended for new product development. New designs should select from parts with "Active" product status to ensure long-term availability and manufacturer support.

Q: How do I evaluate whether a substitute part is suitable for my application?

A: Substitution suitability is determined by comparing the application requirements against the substitute part specifications. The critical parameters are: (1) Drain-to-Source Voltage must equal or exceed the application voltage requirement; (2) Continuous Drain Current must equal or exceed the application current requirement; (3) On-State Resistance must not exceed the thermal budget of the application; (4) Gate-Source Voltage must be compatible with the gate drive circuit; (5) Package and mounting type must match the PCB design. All other parameters should be evaluated for secondary effects on circuit performance.

Q: What is the significance of the lower input capacitance (Ciss) in the STF11N65M2 compared to the 2SK4089LS?

A: Input capacitance affects the gate drive circuit requirements. Lower input capacitance (410 pF versus 1200 pF) reduces the charge required to switch the device and allows faster switching transitions with lower gate drive current. This can improve switching efficiency and reduce electromagnetic interference. However, gate drive circuits designed for the higher capacitance of the 2SK4089LS will continue to function with the STF11N65M2, though with reduced switching speed.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed (STF11N65M2, STF10N95K5, STP10NK70ZFP, R6008ANX, R6007ENX, TK6A60W,S4VX) carry ROHS3 compliance certification. The 2SK4089LS does not specify RoHS status in the provided data. All parts carry REACH Unaffected status and are classified under ECCN EAR99.

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