2SK4088LS N-Channel MOSFET 650V 7.5A TO-220FI Equivalent & Substitute Parts

Part Overview

The 2SK4088LS is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET) manufactured by onsemi, rated for 650V drain-to-source voltage and 7.5A continuous drain current in a Through Hole TO-220FI package. This device is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support, production continuity, and system maintenance. The part operates at a maximum junction temperature of 150°C and dissipates up to 37W under case temperature conditions.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	650	V
Continuous Drain Current (Id) @ 25°C	7.5	A (Tc)
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	850	mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs	37.6	nC @ 10V
Vgs (Max)	±30	V
Input Capacitance (Ciss) (Max) @ Vds	1000	pF @ 30V
Power Dissipation (Max)	37	W (Tc)
Operating Temperature (TJ)	150	°C
Mounting Type	Through Hole	—
Package / Case	TO-220-3 Full Pack	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution of the 2SK4088LS is determined by the following critical parameters:

Voltage Rating Compatibility: The drain-to-source voltage (Vdss) must equal or exceed 650V to maintain electrical safety margins in the application circuit.

Current Rating Compatibility: The continuous drain current (Id) must equal or exceed 7.5A at 25°C case temperature to support the load requirements.

On-State Resistance (Rds On): The maximum on-state resistance at the specified gate-source voltage (Vgs) of 10V must be compatible with power dissipation and thermal management requirements.

Gate Charge (Qg): Gate charge affects switching speed and driver circuit design; substitute parts with significantly different gate charge values may require driver circuit evaluation.

Package Compatibility: All substitute parts must use the TO-220-3 Full Pack configuration to ensure mechanical and thermal interface compatibility with existing PCB layouts and heatsinks.

Gate-Source Voltage (Vgs Max): The maximum gate-source voltage rating must accommodate the control circuit voltage levels.

Input Capacitance (Ciss): Input capacitance affects gate drive requirements and switching characteristics.

Substitute parts are grouped based on their ability to meet or exceed these parameters within the constraints of the application environment.

Parameter Comparison

Parameter	2SK4088LS (Main)	STF11N65M2	IPA70R750P7SXKSA1	STF10N95K5	R6007KNX	STP10NK70ZFP
Manufacturer	onsemi	STMicroelectronics	Infineon Technologies	STMicroelectronics	Rohm Semiconductor	STMicroelectronics
Vdss (V)	650	650	700	950	600	700
Id @ 25°C (A)	7.5	7	6.5	8	7	8.6
Rds On (Max) @ 10V (mOhm)	850	670	750	800	620	850
Qg (Max) @ 10V (nC)	37.6	12.5	8.3	22	14.5	90
Vgs (Max) (V)	±30	±25	±16	±30	±20	±30
Ciss (Max) @ Vds (pF)	1000 @ 30V	410 @ 100V	306 @ 400V	630 @ 100V	470 @ 25V	2000 @ 25V
Power Dissipation (Max) (W)	37	25	21.2	30	46	35
Operating Temperature (°C)	150	-55 to 150	-40 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-220-3 Full Pack	TO-220-3 Full Pack	TO-220-3 Full Pack	TO-220-3 Full Pack	TO-220-3 Full Pack	TO-220-3 Full Pack
Product Status	Obsolete	Active	Last Time Buy	Active	Active	Active
RoHS Status	Not specified	ROHS3 Compliant	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

STF11N65M2 (STMicroelectronics): This part provides the closest electrical match to the 2SK4088LS with identical 650V Vdss rating and comparable 7A continuous drain current. The STF11N65M2 is classified as Active with ROHS3 compliance, ensuring long-term availability and regulatory alignment. Lower gate charge (12.5 nC) and input capacitance (410 pF) compared to the main part indicate improved switching characteristics. Power dissipation rating of 25W is lower than the main part, requiring thermal design verification for applications approaching maximum power levels.

R6007KNX (Rohm Semiconductor): This part offers the lowest on-state resistance (620 mOhm) among all substitutes, providing superior conduction efficiency. The 600V Vdss rating is 50V below the main part specification, suitable only for applications with adequate voltage margin. Continuous drain current of 7A meets the primary requirement. Active product status and ROHS3 compliance support long-term design continuity. Higher power dissipation rating (46W) accommodates thermal requirements in high-current applications.

STP10NK70ZFP (STMicroelectronics): This part exceeds the main part specifications in both voltage (700V) and current (8.6A) ratings, providing design margin for demanding applications. Active product status and ROHS3 compliance ensure availability. Gate charge of 90 nC and input capacitance of 2000 pF are significantly higher than the main part, requiring gate driver circuit evaluation. Power dissipation rating of 35W is comparable to the main part.

STF10N95K5 (STMicroelectronics): This part provides the highest voltage rating (950V) and current rating (8A), offering maximum design margin. Active product status and ROHS3 compliance support production continuity. Gate charge (22 nC) and input capacitance (630 pF) are moderate. Power dissipation rating of 30W is lower than the main part, requiring thermal analysis for high-power applications.

IPA70R750P7SXKSA1 (Infineon Technologies): This CoolMOS™ P7 series part offers 700V Vdss and 6.5A continuous drain current with the lowest gate charge (8.3 nC) and input capacitance (306 pF) among all options, indicating superior switching performance. Last Time Buy status indicates limited future availability. Power dissipation rating of 21.2W is the lowest among substitutes, requiring thermal design verification.

Frequently Asked Questions (FAQ)

Q: Can the 2SK4088LS be directly replaced with any of these substitute parts?

A: Direct replacement depends on application-specific voltage and current requirements. All substitute parts maintain the TO-220-3 Full Pack mechanical interface. Electrical compatibility requires verification of voltage margin (Vdss), current capacity (Id), and thermal dissipation (power rating) against circuit specifications. Gate drive circuits may require adjustment due to differences in gate charge and input capacitance.

Q: Which substitute part has the best electrical performance match?

A: The STF11N65M2 provides the closest electrical match with identical 650V Vdss rating and comparable 7A continuous drain current. This part is recommended as the primary substitute when voltage and current specifications are critical design constraints.

Q: What is the significance of the gate charge (Qg) difference between parts?

A: Gate charge affects the speed and energy required to switch the MOSFET on and off. Lower gate charge (IPA70R750P7SXKSA1 at 8.3 nC) enables faster switching and reduced driver power consumption. Higher gate charge (STP10NK70ZFP at 90 nC) requires more robust gate driver circuits. Gate driver circuit compatibility must be evaluated when substituting parts with significantly different gate charge values.

Q: Are all substitute parts RoHS compliant?

A: STF11N65M2, STF10N95K5, R6007KNX, and STP10NK70ZFP are ROHS3 compliant. IPA70R750P7SXKSA1 RoHS status is not specified in the provided data. Regulatory compliance verification is required for applications subject to RoHS requirements.

Q: What is the difference between Last Time Buy and Active product status?

A: Active status indicates ongoing production and long-term availability. Last Time Buy status (IPA70R750P7SXKSA1) indicates the manufacturer has announced end-of-life, with limited production windows remaining. Active parts are preferred for new designs and long-term production requirements.

Q: Can I use a substitute part with lower continuous drain current rating?

A: Substitution with lower current rating (IPA70R750P7SXKSA1 at 6.5A versus 7.5A main part) is not recommended for applications requiring the full 7.5A specification. This creates thermal stress and reduces component reliability margin.

Q: How do I evaluate thermal compatibility?

A: Compare the power dissipation (Max) rating against circuit power loss calculations. The 2SK4088LS dissipates up to 37W (Tc). Substitute parts with lower ratings (IPA70R750P7SXKSA1 at 21.2W, STF11N65M2 at 25W) require verification that actual circuit power dissipation remains within the substitute part's thermal limit. Heatsink thermal resistance and ambient temperature conditions must be factored into this evaluation.

Q: What is the impact of input capacitance (Ciss) differences?

A: Input capacitance affects gate drive circuit design and switching speed. Lower Ciss (IPA70R750P7SXKSA1 at 306 pF) enables faster switching with lower driver power. Higher Ciss (STP10NK70ZFP at 2000 pF) requires more robust gate driver circuits. Gate driver output impedance and switching frequency must be evaluated when substituting parts with significantly different input capacitance values.

Q: Which substitute part is recommended for new designs?

A: For new designs requiring closest electrical match: STF11N65M2. For designs requiring maximum voltage and current margin: STF10N95K5 or STP10NK70ZFP. For designs prioritizing switching efficiency: IPA70R750P7SXKSA1 (subject to availability confirmation). All recommended parts are Active or Last Time Buy status with established supply chains.

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