2SK4087LS N-Channel 600V 9.2A MOSFET Equivalent & Substitute Parts

Part Overview

The 2SK4087LS is an N-Channel MOSFET manufactured by onsemi, rated for 600V drain-to-source voltage with 9.2A continuous drain current at 25°C. The device is housed in a TO-220FI(LS) through-hole package and is designed for high-voltage switching applications. The 2SK4087LS carries an obsolete product status, making identification of equivalent and substitute parts essential for ongoing design support, production continuity, and component sourcing.

Substitute parts are selected based on matching or exceeding critical electrical parameters: drain-to-source voltage (Vdss), continuous drain current (Id), on-state resistance (Rds On), gate charge (Qg), and input capacitance (Ciss). All substitute parts maintain N-Channel MOSFET technology with TO-220 package compatibility and through-hole mounting.

Key Parameters

Parameter	2SK4087LS	Unit
Manufacturer	onsemi	—
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	9.2	A (Tc)
Rds On (Max) @ Id, Vgs	610	mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs	46	nC @ 10V
Vgs (Max)	±30	V
Input Capacitance (Ciss) (Max) @ Vds	1200	pF @ 30V
Power Dissipation (Max)	40	W (Tc)
Operating Temperature (TJ)	150	°C
Mounting Type	Through Hole	—
Package / Case	TO-220-3 Full Pack	—
Product Status	Obsolete	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—
REACH Status	REACH Unaffected	—

Substitute Part Grouping Explanation

Substitute parts for the 2SK4087LS are selected based on the following critical electrical and mechanical parameters:

Primary Matching Criteria:

Drain-to-Source Voltage (Vdss): 600V or higher
Continuous Drain Current (Id): 7A or higher (minimum threshold for functional equivalence)
On-State Resistance (Rds On): 550–750 mOhm range (acceptable variation for switching performance)
Gate Charge (Qg): 13.5–46 nC (determines gate drive requirements)
Input Capacitance (Ciss): 390–1600 pF (affects switching speed and EMI characteristics)
Mounting Type: Through Hole
Package: TO-220-3 Full Pack

Secondary Considerations:

Product Status: Active status preferred for long-term availability
Operating Temperature Range: −55°C to 150°C or 150°C (Tj)
RoHS Compliance: ROHS3 Compliant preferred
Gate Voltage (Vgs Max): ±20V or ±30V (compatible with standard gate drive circuits)

All substitute parts listed maintain N-Channel MOSFET technology and are compatible with the 2SK4087LS in high-voltage switching applications where the specified electrical parameters are met.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Ciss (pF)	Vgs Max (V)	Operating Temp (°C)	Product Status
2SK4087LS	onsemi	600	9.2	610 @ 7A, 10V	46 @ 10V	1200 @ 30V	±30	150	Obsolete
AOTF10N60L	Alpha & Omega Semiconductor Inc.	600	10	750 @ 5A, 10V	40 @ 10V	1600 @ 25V	±30	−55 to 150	Active
IPAN60R650CEXKSA1	Infineon Technologies	600	9.9	650 @ 2.4A, 10V	20.5 @ 10V	440 @ 100V	±20	−40 to 150	Active
R6007ENX	Rohm Semiconductor	600	7	620 @ 2.4A, 10V	20 @ 10V	390 @ 25V	±20	150	Active
R6007KNX	Rohm Semiconductor	600	7	620 @ 2.4A, 10V	14.5 @ 10V	470 @ 25V	±20	−55 to 150	Active
R6009ENX	Rohm Semiconductor	600	9	535 @ 2.8A, 10V	23 @ 10V	430 @ 25V	±20	150	Active
R6009KNX	Rohm Semiconductor	600	9	535 @ 2.8A, 10V	16.5 @ 10V	540 @ 25V	±20	−55 to 150	Active
STF10N60M2	STMicroelectronics	600	7.5	600 @ 4A, 10V	13.5 @ 10V	400 @ 100V	±25	−55 to 150	Active
STF10N62K3	STMicroelectronics	620	8.4	750 @ 4A, 10V	42 @ 10V	1250 @ 50V	±30	−55 to 150	Active
STF10NM60N	STMicroelectronics	600	10	550 @ 4A, 10V	19 @ 10V	540 @ 50V	±25	−55 to 150	Active
STF10NM60ND	STMicroelectronics	600	8	550 @ 4A, 10V	19 @ 10V	540 @ 50V	±25	−55 to 150	Active

Engineering Selection Recommendations

Primary Substitutes (Highest Compatibility):

STF10NM60N (STMicroelectronics) and AOTF10N60L (Alpha & Omega Semiconductor Inc.) are the most direct substitutes. Both devices match the 600V Vdss rating, exceed the 9.2A continuous drain current specification with 10A ratings, and maintain TO-220-3 through-hole packaging. STF10NM60N offers superior gate charge characteristics (19 nC vs. 46 nC) and active product status with ROHS3 compliance. AOTF10N60L provides extended operating temperature range (−55°C to 150°C) and active status.

Secondary Substitutes (Functional Equivalence with Parameter Trade-offs):

IPAN60R650CEXKSA1 (Infineon Technologies) provides 9.9A continuous drain current and 600V Vdss with significantly lower gate charge (20.5 nC), reducing gate drive power requirements. The CoolMOS™ series designation indicates optimized switching performance. Operating temperature range extends to −40°C.

R6009ENX and R6009KNX (Rohm Semiconductor) both deliver 9A continuous drain current, closely matching the 2SK4087LS specification. R6009KNX offers extended temperature range (−55°C to 150°C) and lower gate charge (16.5 nC). Both are ROHS3 compliant.

STF10N62K3 (STMicroelectronics) operates at 620V Vdss with 8.4A continuous drain current and includes gate charge of 42 nC, closely matching the 2SK4087LS gate charge specification. SuperMESH3™ technology provides optimized performance characteristics.

Tertiary Substitutes (Current Derating Required):

R6007ENX and R6007KNX (Rohm Semiconductor) are rated for 7A continuous drain current, below the 2SK4087LS 9.2A specification. These parts are suitable only for applications where the actual operating current does not exceed 7A. R6007KNX offers extended temperature range and lower gate charge (14.5 nC).

STF10N60M2 and STF10NM60ND (STMicroelectronics) are rated for 7.5A and 8A continuous drain current respectively, requiring current derating in applications demanding the full 9.2A specification.

Compliance and Availability:

All active substitute parts carry ROHS3 compliance and REACH Unaffected status, matching the regulatory profile of the 2SK4087LS. STMicroelectronics and Rohm Semiconductor parts demonstrate highest inventory availability (15,426–45,924 units in stock), ensuring long-term sourcing stability.

Frequently Asked Questions (FAQ)

Q: Can STF10NM60N directly replace 2SK4087LS in all applications?

A: STF10NM60N is electrically compatible for applications operating at or below 9.2A continuous drain current. The 600V Vdss rating, TO-220-3 package, and through-hole mounting are identical. Gate charge is significantly lower (19 nC vs. 46 nC), which may require gate drive circuit adjustment if the original design relied on the higher gate charge for timing characteristics. Verify gate drive voltage compatibility (STF10NM60N: ±25V Vgs Max vs. 2SK4087LS: ±30V Vgs Max).

Q: What is the difference between R6007ENX and R6007KNX?

A: Both parts are rated for 7A continuous drain current at 600V Vdss in TO-220FM packages. R6007KNX offers extended operating temperature range (−55°C to 150°C vs. 150°C for R6007ENX) and lower gate charge (14.5 nC vs. 20 nC). R6007KNX is preferred for applications requiring wider temperature operation or faster switching response. Both require current derating below the 2SK4087LS 9.2A specification.

Q: Why does IPAN60R650CEXKSA1 have lower gate charge than 2SK4087LS?

A: IPAN60R650CEXKSA1 employs Infineon's CoolMOS™ technology, which optimizes the gate charge characteristic through advanced semiconductor design. Lower gate charge (20.5 nC vs. 46 nC) reduces gate drive power dissipation and enables faster switching transitions. This is a performance advantage, not a limitation. The device remains fully compatible with standard gate drive circuits.

Q: Are all substitute parts ROHS3 compliant?

A: All active substitute parts listed carry ROHS3 Compliant status. The 2SK4087LS is obsolete and does not carry explicit ROHS3 designation, but all recommended substitutes meet current environmental compliance requirements.

Q: Can I use AOTF10N60L in a design originally specified for 2SK4087LS?

A: Yes. AOTF10N60L matches the 600V Vdss and exceeds the 9.2A continuous drain current specification with a 10A rating. The TO-220-3 through-hole package is identical. Gate charge is lower (40 nC vs. 46 nC), and operating temperature range is extended (−55°C to 150°C). The device is pin-compatible and electrically suitable for direct substitution. Verify gate drive circuit compatibility with ±30V Vgs Max rating.

Q: What is the impact of different Rds On values among substitute parts?

A: On-state resistance (Rds On) directly affects conduction losses and heat dissipation. Lower Rds On values reduce power dissipation at a given drain current. The 2SK4087LS specifies 610 mOhm @ 7A, 10V. Substitute parts range from 535 mOhm (R6009 series) to 750 mOhm (AOTF10N60L, STF10N62K3). Lower Rds On values improve efficiency but may require thermal management review. Higher Rds On values increase conduction losses and require verification that power dissipation remains within design limits.

Q: Which substitute part offers the best gate drive efficiency?

A: STF10N60M2 and STF10NM60ND offer the lowest gate charge (13.5 nC and 19 nC respectively), minimizing gate drive power dissipation and enabling faster switching transitions. IPAN60R650CEXKSA1 (20.5 nC) and R6007KNX (14.5 nC) also provide excellent gate drive efficiency. These characteristics are advantageous in high-frequency switching applications and reduce overall system power consumption.

Q: Is package compatibility guaranteed across all substitute parts?

A: All substitute parts use TO-220-3 Full Pack through-hole mounting, ensuring mechanical and pin compatibility with the 2SK4087LS. However, specific package variants differ: 2SK4087LS uses TO-220FI(LS), while substitutes use TO-220F, TO-220FM, or TO-220FP designations. These variants are mechanically and electrically interchangeable in standard TO-220 footprints. Verify PCB layout and heatsink mounting compatibility with the specific package variant selected.

Q: Can I use R6007ENX or R6007KNX if my application requires 9.2A continuous current?

A: No. R6007ENX and R6007KNX are rated for 7A continuous drain current, which is below the 2SK4087LS 9.2A specification. Using these parts in applications requiring 9.2A operation will result in device overstress, reduced reliability, and potential thermal runaway. These parts are suitable only for applications where actual operating current does not exceed 7A.

Q: What is the significance of the "K" designation in Rohm part numbers (R6007KNX, R6009KNX)?

A: The "K" designation in Rohm part numbers indicates enhanced performance characteristics, typically including extended operating temperature range (−55°C to 150°C vs. 150°C for non-K variants) and optimized gate charge values. R6007KNX and R6009KNX are preferred over their non-K counterparts (R6007ENX, R6009ENX) for applications requiring wider temperature operation or improved switching performance.

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