2SK4066-DL-E N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The 2SK4066-DL-E is an N-Channel MOSFET manufactured by onsemi, rated for 60V drain-to-source voltage and 100A continuous drain current in a surface mount SMP-FD package. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support, production continuity, and component sourcing.

The 2SK4066-DL-E serves in high-current switching applications requiring low on-resistance and compact surface mount packaging. Obsolete status necessitates identification of functionally equivalent alternatives that maintain electrical and mechanical compatibility within specified parameter tolerances.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	100	A (Ta)
On-Resistance (Rds On Max) @ 50A, 10V	4.7	mOhm
Gate Charge (Qg Max) @ 10V	220	nC
Input Capacitance (Ciss Max) @ 20V	12500	pF
Gate-Source Voltage (Vgs Max)	±20	V
Power Dissipation (Max)	1.65 (Ta), 90 (Tc)	W
Operating Temperature (TJ)	150	°C
Package Type	TO-263-3, D2PAK	—
Mounting Type	Surface Mount	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the 2SK4066-DL-E is determined by the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: Substitute parts must have a Vdss rating equal to or greater than 60V. Parts rated at 55V operate below the original specification and are acceptable only when circuit design margins permit. Parts rated at 75V or higher provide additional voltage margin.

Current Rating Compatibility: Substitute parts must support continuous drain current (Id) at or above 100A. Parts rated at 80A or 90A operate below the original specification and are acceptable only when thermal management and circuit duty cycle permit. Parts rated at 100A or higher maintain full current capacity.

On-Resistance (Rds On): Substitute parts must maintain Rds On values comparable to or lower than 4.7 mOhm to ensure equivalent power dissipation and thermal performance. Lower Rds On values improve efficiency.

Package and Mounting: All substitute parts must use TO-263-3 or D2PAK surface mount packaging to maintain PCB compatibility and thermal interface characteristics.

Gate Charge and Input Capacitance: These parameters affect switching speed and driver requirements. Substitute parts with lower gate charge and input capacitance values reduce driver stress and improve switching performance.

Temperature Rating: Substitute parts must support the operating temperature range of the application. The 2SK4066-DL-E operates to 150°C; substitute parts with higher temperature ratings (175°C) provide additional thermal margin.

Compliance and Status: Active product status and RoHS3 compliance are preferred for long-term availability and regulatory adherence.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On Max (mOhm)	Qg Max (nC)	Ciss Max (pF)	Vgs Max (V)	Power Dissipation (W)	TJ Max (°C)	Product Status	Package
2SK4066-DL-E	onsemi	60	100 (Ta)	4.7 @ 50A, 10V	220 @ 10V	12500 @ 20V	±20	1.65 (Ta), 90 (Tc)	150	Obsolete	TO-263-3, D2PAK
STB130N6F7	STMicroelectronics	60	80 (Tc)	5.0 @ 40A, 10V	42 @ 10V	2600 @ 25V	±20	160 (Tc)	175	Active	TO-263-3, D2PAK
IPB100N06S205ATMA4	Infineon Technologies	55	100 (Tc)	4.7 @ 80A, 10V	170 @ 10V	5110 @ 25V	±20	300 (Tc)	175	Obsolete	TO-263-3, D2PAK
NP89N055PUK-E1-AY	Renesas Electronics	55	90 (Tc)	4.0 @ 45A, 10V	102 @ 10V	6000 @ 25V	±20	1.8 (Ta), 147 (Tc)	175	Active	TO-263-3, D2PAK
IPB049NE7N3GATMA1	Infineon Technologies	75	80 (Tc)	4.9 @ 80A, 10V	68 @ 10V	4750 @ 37.5V	±20	150 (Tc)	175	Obsolete	TO-263-3, D2PAK
STB160N75F3	STMicroelectronics	75	120 (Tc)	4.0 @ 60A, 10V	85 @ 10V	6750 @ 25V	±20	330 (Tc)	175	Active	TO-263-3, D2PAK

Engineering Selection Recommendations

Primary Substitute: STB130N6F7 (STMicroelectronics)

The STB130N6F7 is the closest functional equivalent to the 2SK4066-DL-E. It maintains identical 60V voltage rating, operates at 80A continuous drain current (within acceptable margin for most applications), and provides equivalent on-resistance of 5.0 mOhm. The STB130N6F7 is active product status with RoHS3 compliance, ensuring long-term availability and regulatory adherence. Superior gate charge (42 nC vs. 220 nC) and lower input capacitance (2600 pF vs. 12500 pF) reduce driver requirements and improve switching performance. Operating temperature extends to 175°C, providing additional thermal margin. TO-263-3 D2PAK packaging maintains direct PCB compatibility.

Secondary Substitute: STB160N75F3 (STMicroelectronics)

The STB160N75F3 provides higher voltage (75V) and current (120A) ratings, offering design margin for applications with voltage transients or future current scaling. On-resistance of 4.0 mOhm is superior to the original specification. Active product status and RoHS3 compliance support long-term production. Gate charge (85 nC) and input capacitance (6750 pF) are moderate. This part is suitable when higher voltage and current headroom are required.

Tertiary Substitute: NP89N055PUK-E1-AY (Renesas Electronics)

The NP89N055PUK-E1-AY operates at 55V (5V below original specification) and 90A continuous drain current (10A below original specification). On-resistance of 4.0 mOhm is superior. Active product status and RoHS3 compliance ensure availability. This part is suitable for applications where voltage and current margins are adequate and lower gate charge (102 nC) is beneficial. Tape & Reel packaging supports high-volume production.

Voltage-Reduced Alternatives: IPB100N06S205ATMA4

The IPB100N06S205ATMA4 operates at 55V (5V below original specification) with 100A continuous drain current matching the original part. On-resistance of 4.7 mOhm is equivalent. Obsolete status limits long-term availability. This part is suitable only for existing inventory management or when voltage margin is confirmed adequate.

Higher Voltage Alternative: IPB049NE7N3GATMA1

The IPB049NE7N3GATMA1 operates at 75V with 80A continuous drain current. On-resistance of 4.9 mOhm is comparable. Obsolete status limits availability. This part is suitable when higher voltage margin is required and current reduction to 80A is acceptable.

Frequently Asked Questions (FAQ)

Q: Can the STB130N6F7 directly replace the 2SK4066-DL-E without circuit modification?

A: The STB130N6F7 is mechanically and electrically compatible for most applications. Both parts share identical 60V voltage rating, TO-263-3 D2PAK packaging, and ±20V gate-source voltage rating. The STB130N6F7 operates at 80A continuous current versus the original 100A; verify that circuit duty cycle and thermal management accommodate this 20% current reduction. Superior gate charge and input capacitance characteristics of the STB130N6F7 may improve switching performance without circuit modification.

Q: What is the impact of using a 55V-rated part (IPB100N06S205ATMA4 or NP89N055PUK-E1-AY) in place of the 60V-rated 2SK4066-DL-E?

A: A 55V-rated part reduces the maximum drain-to-source voltage margin by 5V. This substitution is acceptable only when circuit analysis confirms that the maximum drain-to-source voltage under all operating conditions (including transients, overshoot, and fault conditions) does not exceed 55V. Voltage transients from inductive switching or supply overshoot must be evaluated. Use of a 55V-rated part is not recommended for applications with uncontrolled voltage sources or high-impedance switching environments.

Q: Why does the STB160N75F3 have higher gate charge and input capacitance than the STB130N6F7?

A: The STB160N75F3 is rated for higher current (120A vs. 80A) and voltage (75V vs. 60V), requiring larger die area and higher capacitance. Higher gate charge (85 nC vs. 42 nC) and input capacitance (6750 pF vs. 2600 pF) reflect the larger semiconductor structure. Driver circuits must supply adequate gate current to meet switching speed requirements. Verify that the existing gate driver can supply sufficient current for the STB160N75F3 without exceeding maximum gate voltage (±20V).

Q: Are all substitute parts RoHS3 compliant?

A: The STB130N6F7, STB160N75F3, and NP89N055PUK-E1-AY are RoHS3 compliant. The IPB100N06S205ATMA4 and IPB049NE7N3GATMA1 are RoHS3 compliant. All parts have MSL rating of 1 (Unlimited), indicating no moisture sensitivity restrictions. Verify compliance requirements for your specific application and supply chain.

Q: What is the difference between Ta (ambient temperature) and Tc (case temperature) power dissipation ratings?

A: Power dissipation at Ta (ambient temperature) assumes natural convection cooling without forced airflow or heat sink. Power dissipation at Tc (case temperature) assumes direct thermal coupling to a heat sink or PCB thermal plane. The 2SK4066-DL-E specifies 1.65W (Ta) and 90W (Tc). Substitute parts with higher Tc ratings (e.g., STB130N6F7 at 160W Tc) indicate improved thermal performance when mounted on adequate heat sinking. Select power dissipation rating based on your thermal management design.

Q: Can I use the STB160N75F3 (75V, 120A) in a circuit designed for the 2SK4066-DL-E (60V, 100A)?

A: Yes, the STB160N75F3 is a superset substitute. Higher voltage (75V vs. 60V) and current (120A vs. 100A) ratings provide design margin. Lower on-resistance (4.0 mOhm vs. 4.7 mOhm) improves efficiency. TO-263-3 D2PAK packaging is identical. Verify that gate driver circuits can supply the higher gate charge (85 nC vs. 220 nC) without exceeding ±20V gate-source voltage limits. Active product status ensures long-term availability.

Q: What is the significance of gate charge (Qg) in selecting a substitute part?

A: Gate charge determines the total charge that must be supplied by the gate driver to switch the MOSFET on or off. Lower gate charge reduces driver current requirements and switching losses. The 2SK4066-DL-E specifies 220 nC gate charge; the STB130N6F7 specifies 42 nC. If the existing gate driver is current-limited, the STB130N6F7 will switch faster and generate less heat in the driver circuit. Conversely, if the gate driver is designed for high gate charge, a lower-charge substitute may require driver circuit adjustment to prevent excessive switching speed and EMI.

Q: Are there any package compatibility issues between the 2SK4066-DL-E and substitute parts?

A: All substitute parts use TO-263-3 or D2PAK packaging, which are mechanically and thermally equivalent. Pin assignments are identical: Gate (pin 1), Drain (pin 2), Source (pin 3), with a large tab for thermal coupling. PCB footprints are directly compatible. Verify that thermal interface material (if used) and heat sink mounting are adequate for the substitute part's power dissipation rating.

Q: Which substitute part is recommended for new designs?

A: For new designs, the STB130N6F7 (active status, RoHS3 compliant) is recommended as the primary choice. It maintains 60V voltage rating, provides adequate current capacity at 80A, and offers superior switching characteristics with lower gate charge and input capacitance. If higher voltage or current margin is required, the STB160N75F3 (active status, RoHS3 compliant) is recommended. Both parts ensure long-term availability and regulatory compliance.

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