2SK3318 Equivalent & Substitute Parts

Part Overview

The 2SK3318 is an N-Channel MOSFET manufactured by Panasonic Electronic Components, rated for 600V drain-to-source voltage with 15A continuous drain current. This device features a TOP-3F-A1 through-hole package and is designed for high-voltage switching applications requiring 100W power dissipation at the case temperature. The 2SK3318 is classified as obsolete, making identification of functionally equivalent substitute components necessary for ongoing system support and new design implementations.

Substiute Parts

2SK3318
Panasonic Electronic ComponentsIn Stock: 8032SK3318 Datasheet
2SK3318
Current Part
RJK6014DPK-00#T0
Renesas Electronics CorporationIn Stock: 1006RJK6014DPK-00#T0 Datasheet
RJK6014DPK-00#T0
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Key Parameters

Parameter Value Unit
FET Type N-Channel
Drain to Source Voltage (Vdss) 600 V
Continuous Drain Current (Id) @ 25°C 15 A
Drive Voltage (Max Rds On) 10 V
Rds On (Max) @ Id, Vgs 460 mOhm @ 7.5A, 10V
Gate-Source Voltage (Vgs) Max ±30 V
Power Dissipation (Max) 100 (Tc) W
Operating Temperature (TJ) 150 °C
Mounting Type Through Hole
Package / Case TOP-3F

Substitute Part Grouping Explanation

Substitute components for the 2SK3318 are identified based on the following critical electrical and mechanical parameters:

Electrical Matching Criteria:

  • Drain-to-Source Voltage (Vdss): 600V minimum
  • Continuous Drain Current (Id): 15A or greater at 25°C
  • Gate-Source Voltage (Vgs): ±30V maximum rating
  • Drive Voltage: 10V gate drive compatibility
  • Power Dissipation: 100W or greater at case temperature

Mechanical Matching Criteria:

  • Mounting Type: Through Hole
  • Package Classification: Compatible with TOP-3F or equivalent three-pin through-hole packages

The RJK6014DPK-00#T0 meets these substitution criteria through equivalent voltage ratings, superior current handling (16A vs. 15A), compatible gate drive specifications, and through-hole mounting in a TO-3P package that accommodates the same circuit board footprint requirements.

Parameter Comparison

Parameter 2SK3318 (Main Part) RJK6014DPK-00#T0 (Substitute) Unit
Manufacturer Panasonic Electronic Components Renesas Electronics Corporation
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 600 V
Continuous Drain Current (Id) @ 25°C 15 (Tc) 16 (Ta) A
Drive Voltage (Max Rds On) 10 10 V
Rds On (Max) @ Id, Vgs 460 mOhm @ 7.5A, 10V 575 mOhm @ 8A, 10V
Gate-Source Voltage (Vgs) Max ±30 ±30 V
Power Dissipation (Max) 100 (Tc) 150 (Tc) W
Operating Temperature (TJ) 150 150 °C
Mounting Type Through Hole Through Hole
Package / Case TOP-3F TO-3P-3, SC-65-3
Product Status Obsolete Active
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

The RJK6014DPK-00#T0 is a suitable substitute for the obsolete 2SK3318 based on the following engineering factors:

Product Status Alignment: The RJK6014DPK-00#T0 maintains Active product status, ensuring continued availability and manufacturer support. The 2SK3318's Obsolete classification necessitates transition to an alternative component for long-term supply chain reliability.

Electrical Specification Compliance: Both devices operate at identical 600V Vdss ratings and ±30V gate-source voltage limits. The substitute provides 16A continuous drain current, exceeding the 15A requirement of the main part. Both devices accept 10V gate drive voltage and share identical maximum operating junction temperature of 150°C.

Power Dissipation Capability: The RJK6014DPK-00#T0 delivers 150W maximum power dissipation at case temperature, compared to 100W for the 2SK3318. This enhanced thermal capability provides design margin for applications operating near thermal limits.

Regulatory Compliance: The RJK6014DPK-00#T0 carries ROHS3 Compliance and REACH Affected status certifications. Both devices share identical Moisture Sensitivity Level (MSL) classification of 1 (Unlimited) and ECCN/HTSUS codes, indicating equivalent regulatory treatment.

Package Compatibility: The TO-3P package of the RJK6014DPK-00#T0 accommodates the same three-pin through-hole mounting configuration as the TOP-3F package, enabling direct circuit board layout compatibility without redesign.

Frequently Asked Questions (FAQ)

Q: Can the RJK6014DPK-00#T0 directly replace the 2SK3318 in existing circuit boards?

A: Yes. Both devices feature three-pin through-hole packages with identical pin configurations for drain, gate, and source connections. The TO-3P package footprint is mechanically compatible with TOP-3F mounting requirements.

Q: What is the significance of the higher 16A current rating on the substitute part?

A: The RJK6014DPK-00#T0 provides 1A additional continuous drain current capacity beyond the 2SK3318's 15A specification. This represents a 6.7% increase in current handling capability, providing design margin for applications operating near maximum current limits.

Q: How do the on-resistance characteristics compare between these devices?

A: The 2SK3318 exhibits 460 mOhm maximum on-resistance at 7.5A and 10V gate drive. The RJK6014DPK-00#T0 specifies 575 mOhm maximum on-resistance at 8A and 10V gate drive. The substitute's higher on-resistance is offset by its superior power dissipation rating (150W vs. 100W), maintaining thermal performance in practical applications.

Q: Are there any gate charge or input capacitance differences that affect circuit design?

A: The RJK6014DPK-00#T0 specifies 45 nC maximum gate charge at 10V and 1800 pF input capacitance at 25V. The 2SK3318 specifies 3500 pF input capacitance at 20V. The substitute's lower input capacitance may reduce gate drive power requirements in high-frequency switching applications.

Q: What is the product availability status difference between these parts?

A: The 2SK3318 is classified as Obsolete, indicating discontinued manufacturing and limited remaining inventory. The RJK6014DPK-00#T0 maintains Active status with 908 pieces in current stock, ensuring reliable long-term supply chain access for new designs and production support.

Q: Do both devices share identical voltage and temperature ratings?

A: Yes. Both devices are rated for 600V drain-to-source voltage, ±30V gate-source voltage, and 150°C maximum junction temperature. These identical ratings ensure equivalent performance in high-voltage switching applications.

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