2SK2995(F) N-Channel MOSFET 250V 30A Equivalent & Substitute Parts

Part Overview

The 2SK2995(F) is an N-Channel MOSFET manufactured by Toshiba Semiconductor and Storage, rated for 250V drain-to-source voltage and 30A continuous drain current in a through-hole TO-3P(N)IS package. This device is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support, maintenance, and production continuity. The part delivers 90W maximum power dissipation and operates at junction temperatures up to 150°C.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	250	V
Current - Continuous Drain (Id) @ 25°C	30	A (Ta)
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	68	mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	3.5	V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	132	nC @ 10V
Vgs (Max)	±20	V
Input Capacitance (Ciss) (Max) @ Vds	5400	pF @ 10V
Power Dissipation (Max)	90	W (Tc)
Operating Temperature (TJ)	150	°C
Mounting Type	Through Hole	—
Package / Case	TO-3P-3, SC-65-3	—
Product Status	Obsolete	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the 2SK2995(F) is determined by strict alignment of electrical and mechanical parameters within the N-Channel MOSFET category. The primary substitution criteria are:

Electrical Compatibility Requirements:

Drain to Source Voltage (Vdss): Must equal or exceed 250V
FET Type: Must be N-Channel
Technology: Must be MOSFET (Metal Oxide)
Gate-Source Voltage (Vgs Max): Must support ±20V operation
Mounting Type: Must be Through Hole
Package / Case: Must be compatible with TO-3P-3 or SC-65-3 footprints

Current and Power Considerations:

Continuous Drain Current (Id): Substitute must meet or exceed 30A rating
Power Dissipation: Substitute must support thermal requirements of the application
On-State Resistance (Rds On): Lower values indicate improved performance

Thermal and Environmental:

Operating Temperature Range: Must support minimum 150°C junction temperature
Moisture Sensitivity Level: MSL 1 (Unlimited) is standard for this package type

The IXTQ42N25P from IXYS meets all substitution criteria with enhanced electrical performance characteristics.

Parameter Comparison

Parameter	2SK2995(F) (Toshiba)	IXTQ42N25P (IXYS)	Unit
FET Type	N-Channel	N-Channel	—
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	250	250	V
Current - Continuous Drain (Id)	30 (Ta)	42 (Tc)	A
Drive Voltage (Max Rds On)	10	10	V
Rds On (Max) @ Id, Vgs	68 @ 15A, 10V	84 @ 500mA, 10V	mOhm
Vgs (Max)	±20	±20	V
Power Dissipation (Max)	90 (Tc)	300 (Tc)	W
Operating Temperature (TJ)	150	-55 ~ 150	°C
Mounting Type	Through Hole	Through Hole	—
Package / Case	TO-3P-3, SC-65-3	TO-3P-3, SC-65-3	—
Product Status	Obsolete	Active	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	—

Engineering Selection Recommendations

IXTQ42N25P as Primary Substitute:

The IXTQ42N25P from IXYS is a direct substitute for the 2SK2995(F). Both devices share identical voltage ratings (250V Vdss), identical gate-source voltage limits (±20V), identical drive voltage specifications (10V), and identical package footprints (TO-3P-3, SC-65-3). The IXTQ42N25P provides superior electrical performance with 42A continuous drain current versus 30A, and 300W power dissipation versus 90W, enabling operation in higher-power applications without thermal constraints.

The IXTQ42N25P carries Active product status, ensuring long-term availability and manufacturing support. The device is RoHS3 Compliant and REACH Unaffected, meeting current environmental and regulatory requirements. The extended operating temperature range (-55°C to 150°C) provides additional thermal margin compared to the 2SK2995(F).

Both devices maintain MSL 1 (Unlimited) moisture sensitivity classification, indicating no special handling requirements during storage or assembly.

Frequently Asked Questions (FAQ)

Q: Can the IXTQ42N25P directly replace the 2SK2995(F) in existing PCB designs?

A: Yes. Both devices use identical TO-3P-3 and SC-65-3 package footprints and pin configurations. No PCB layout modifications are required. The electrical parameters are compatible across all specified operating conditions.

Q: What are the key differences between these two devices?

A: The IXTQ42N25P provides higher continuous drain current (42A versus 30A) and significantly higher power dissipation capability (300W versus 90W). The IXTQ42N25P also offers an extended operating temperature range (-55°C to 150°C versus 150°C maximum). The 2SK2995(F) is obsolete; the IXTQ42N25P is in active production.

Q: Are there any gate charge or capacitance differences that affect circuit design?

A: Yes. The IXTQ42N25P has lower gate charge (70 nC @ 10V versus 132 nC @ 10V) and lower input capacitance (2300 pF @ 25V versus 5400 pF @ 10V). These differences may improve switching speed and reduce gate drive power requirements in the substitute device.

Q: Do both devices require identical gate drive voltage?

A: Yes. Both the 2SK2995(F) and IXTQ42N25P operate with a maximum gate-source voltage of ±20V and a drive voltage specification of 10V. Existing gate drive circuits require no modification.

Q: What is the significance of the different Rds On measurement conditions?

A: The 2SK2995(F) specifies Rds On at 15A and 10V gate voltage, while the IXTQ42N25P specifies Rds On at 500mA and 10V gate voltage. These represent different operating points in the device datasheets. Direct numerical comparison is not applicable; refer to full datasheet curves for on-state resistance at specific operating currents.

Q: Are moisture sensitivity and handling requirements identical?

A: Yes. Both devices carry MSL 1 (Unlimited) classification, indicating no moisture sensitivity concerns. Standard component handling procedures apply to both parts.

Q: What compliance certifications apply to the IXTQ42N25P?

A: The IXTQ42N25P is RoHS3 Compliant and REACH Unaffected. Both devices carry ECCN EAR99 and HTSUS 8541.29.0095 classifications.

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