2SK2376(Q) N-Channel MOSFET 60V 45A TO-220FL Equivalent & Substitute Parts

Part Overview

The 2SK2376(Q) is an N-Channel MOSFET manufactured by Toshiba Semiconductor and Storage, rated for 60V drain-to-source voltage with 45A continuous drain current in a through-hole TO-220FL package. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support, production continuity, and component sourcing.

The 2SK2376(Q) operates at a maximum junction temperature of 150°C with 100W power dissipation capability. Its through-hole mounting configuration and electrical specifications position it for applications requiring moderate-to-high current switching at 60V levels.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	45	A (Ta)
On-State Resistance (Rds On) @ 25A, 10V	17	mOhm
Gate Threshold Voltage (Vgs(th)) @ 1mA	2	V (Max)
Gate Charge (Qg) @ 10V	110	nC (Max)
Input Capacitance (Ciss) @ 10V	3350	pF (Max)
Maximum Gate Voltage (Vgs)	±20	V
Power Dissipation (Tc)	100	W
Maximum Junction Temperature (TJ)	150	°C
Mounting Type	Through Hole	—
Package	TO-220-3, Short Tab	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the 2SK2376(Q) is determined by electrical parameter compatibility within the following criteria:

Primary Electrical Matching Parameters:

Drain-to-Source Voltage (Vdss): 60V minimum
Continuous Drain Current (Id): Equal to or greater than 45A
On-State Resistance (Rds On): Comparable or lower values to maintain switching efficiency
Gate Threshold Voltage (Vgs(th)): Within acceptable operating range for gate drive circuits
Maximum Junction Temperature: Support for thermal operating conditions
Power Dissipation: Sufficient thermal capability for application requirements

Package and Mounting Considerations: The 2SK2376(Q) uses through-hole TO-220FL mounting. Substitute parts identified in this reference include surface-mount D2PAK alternatives, which require circuit board redesign and thermal management evaluation. Surface-mount substitutes are electrically compatible but require mechanical and thermal re-qualification.

Product Status Impact: The 2SK2376(Q) is obsolete. Active substitute parts ensure long-term component availability and manufacturing support.

Parameter Comparison

Parameter	2SK2376(Q)	STB55NF06LT4	STB60NF06LT4	Unit
Manufacturer	Toshiba	STMicroelectronics	STMicroelectronics	—
Drain-to-Source Voltage (Vdss)	60	60	60	V
Continuous Drain Current (Id) @ 25°C	45 (Ta)	55 (Tc)	60 (Tc)	A
On-State Resistance (Rds On)	17 @ 25A, 10V	18 @ 27.5A, 10V	14 @ 30A, 10V	mOhm
Gate Threshold Voltage (Vgs(th))	2 @ 1mA	4.7 @ 250µA	1 @ 250µA	V (Max)
Gate Charge (Qg)	110 @ 10V	37 @ 4.5V	66 @ 4.5V	nC (Max)
Input Capacitance (Ciss)	3350 @ 10V	1700 @ 25V	2000 @ 25V	pF (Max)
Maximum Gate Voltage (Vgs)	±20	±16	±15	V
Power Dissipation	100 (Tc)	95 (Tc)	110 (Tc)	W
Maximum Junction Temperature (TJ)	150	-55 to 175	-65 to 175	°C
Mounting Type	Through Hole	Surface Mount	Surface Mount	—
Package	TO-220-3, Short Tab	D2PAK (TO-263-3)	D2PAK (TO-263-3)	—
Product Status	Obsolete	Active	Active	—
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	—

Engineering Selection Recommendations

STB55NF06LT4 (STMicroelectronics STripFET™ II Series)

The STB55NF06LT4 meets the 60V voltage rating and exceeds the 45A current requirement with 55A continuous drain current. On-state resistance of 18mOhm at 27.5A, 10V is comparable to the 2SK2376(Q). This device is active in production with ROHS3 compliance and REACH unaffected status, ensuring long-term availability and regulatory compliance.

The STB55NF06LT4 operates across -55°C to 175°C, providing extended low-temperature performance beyond the 2SK2376(Q). Power dissipation of 95W is slightly lower than the original part. Gate charge of 37nC is significantly reduced, improving switching speed and reducing gate drive power requirements. The D2PAK surface-mount package requires circuit board redesign compared to the through-hole TO-220FL footprint.

STB60NF06LT4 (STMicroelectronics STripFET™ II Series)

The STB60NF06LT4 provides the highest electrical performance among identified substitutes. It maintains the 60V rating with 60A continuous drain current, exceeding the 2SK2376(Q) by 33%. On-state resistance of 14mOhm at 30A, 10V is superior to the original part, reducing conduction losses. Power dissipation capability of 110W exceeds the 2SK2376(Q) by 10%.

This device is active in production with ROHS3 compliance and REACH unaffected status. Operating temperature range of -65°C to 175°C provides extended low-temperature capability. Gate charge of 66nC is substantially lower than the 2SK2376(Q), improving switching characteristics. The D2PAK package requires mechanical redesign for through-hole-to-surface-mount conversion.

Compliance and Availability:

Both STMicroelectronics substitutes are active products with confirmed inventory availability. Both devices comply with ROHS3 and carry REACH unaffected status, meeting current regulatory requirements. The 2SK2376(Q) is obsolete, making these active alternatives necessary for production continuity and long-term supply chain stability.

Frequently Asked Questions (FAQ)

Q: Can the STB55NF06LT4 or STB60NF06LT4 directly replace the 2SK2376(Q) without circuit modifications?

A: Electrical substitution is direct based on voltage and current ratings. However, the package change from through-hole TO-220FL to surface-mount D2PAK requires printed circuit board redesign, thermal management re-evaluation, and mechanical mounting changes. Gate charge differences (37nC and 66nC versus 110nC) may require gate drive circuit adjustment.

Q: What are the key electrical differences between the two STMicroelectronics substitutes?

A: The STB60NF06LT4 provides superior on-state resistance (14mOhm versus 18mOhm), higher current rating (60A versus 55A), and greater power dissipation capability (110W versus 95W). The STB55NF06LT4 has lower gate charge (37nC versus 66nC), enabling faster switching. Both maintain 60V voltage rating and are electrically compatible with the 2SK2376(Q) application envelope.

Q: How does the gate threshold voltage difference affect circuit design?

A: The 2SK2376(Q) has a gate threshold of 2V at 1mA, while the STB55NF06LT4 is 4.7V at 250µA and the STB60NF06LT4 is 1V at 250µA. These differences reflect different measurement conditions and device technology. Gate drive circuits must supply sufficient voltage to achieve full on-state conduction. Verify gate drive voltage compatibility with the selected substitute part.

Q: What is the impact of reduced input capacitance in the substitute parts?

A: The 2SK2376(Q) has input capacitance of 3350pF at 10V, while substitutes have 1700pF and 2000pF at 25V. Lower input capacitance reduces gate charge requirements and improves switching speed, reducing gate drive power dissipation and enabling higher switching frequencies. This is a performance advantage in most applications.

Q: Are there thermal management considerations when switching from through-hole to surface-mount packages?

A: The TO-220FL through-hole package and D2PAK surface-mount package have different thermal characteristics. D2PAK mounting on printed circuit board copper planes provides direct thermal coupling. Thermal management design must account for board layout, copper area, and heat sink requirements specific to the D2PAK package geometry.

Q: Do the substitute parts meet current regulatory compliance requirements?

A: Both STB55NF06LT4 and STB60NF06LT4 are ROHS3 compliant and REACH unaffected. The 2SK2376(Q) compliance status is not specified. Active substitute parts ensure compliance with current environmental and regulatory standards for new designs and production.

Q: What is the significance of the product status difference?

A: The 2SK2376(Q) is obsolete, indicating discontinued manufacturing and limited future availability. The STB55NF06LT4 and STB60NF06LT4 are active products with ongoing production, ensuring component availability for current and future production runs. Obsolete parts present supply chain risk for long-term product support.

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