2SJ665-DL-E Equivalent & Substitute Parts

Part Overview

The 2SJ665-DL-E is a P-Channel MOSFET manufactured by onsemi, rated for 100V drain-to-source voltage with 27A continuous drain current in surface mount SMP-FD packaging. This device is classified as obsolete, necessitating identification of active equivalent components for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, and thermal characteristics while accommodating available packaging options.

Substiute Parts

2SJ665-DL-E

onsemiIn Stock: 9792SJ665-DL-E Datasheet

Current PartRFQ

FQB34P10TM

onsemiIn Stock: 26333FQB34P10TM Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the 2SJ665-DL-E is determined by strict equivalence across the following electrical and mechanical parameters:

Electrical Compatibility Criteria:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 100V
• Continuous Drain Current (Id): Must equal or exceed 27A at rated temperature
• Gate Threshold Voltage (Vgs(th)): Must be compatible with existing gate drive circuits
• On-State Resistance (Rds On): Lower values indicate improved performance and reduced power dissipation
• Gate Charge (Qg): Lower values reduce switching losses
• Input Capacitance (Ciss): Affects gate drive requirements

Mechanical Compatibility Criteria:

• FET Type: P-Channel topology required
• Technology: MOSFET (Metal Oxide) construction
• Mounting Type: Surface Mount
• Package Type: TO-263-3 or D2PAK (2 Leads + Tab) compatible footprints

The substitute part FQB34P10TM meets all electrical and mechanical requirements while offering improved performance characteristics and active product status.

Parameter Comparison

Engineering Selection Recommendations

Primary Substitute: FQB34P10TM

The FQB34P10TM is the direct substitute for the 2SJ665-DL-E based on the following factors:

1. Electrical Equivalence: Both devices share identical 100V Vdss rating and P-Channel MOSFET topology. The FQB34P10TM provides 33.5A continuous drain current, exceeding the 27A requirement of the 2SJ665-DL-E.

2. Improved Performance: The substitute exhibits lower on-state resistance (60 mOhm vs. 77 mOhm), resulting in reduced power dissipation and improved thermal efficiency. Enhanced power dissipation capability (155W vs. 65W at Tc) provides additional thermal margin.

3. Package Compatibility: Both devices utilize TO-263-3 (D2PAK) surface mount packaging with identical footprints, enabling direct PCB layout compatibility without redesign.

4. Product Status: The FQB34P10TM maintains active product status with full manufacturing support, ensuring long-term availability and supply chain stability.

5. Compliance: The FQB34P10TM is ROHS3 compliant and REACH unaffected, meeting current regulatory requirements for new designs and production.

6. Temperature Range: The FQB34P10TM operates across -55°C to 175°C, providing extended temperature coverage compared to the 2SJ665-DL-E maximum of 150°C.

Frequently Asked Questions (FAQ)

Q: Can the FQB34P10TM directly replace the 2SJ665-DL-E without circuit modifications?

A: Yes. Both devices share identical voltage ratings (100V Vdss), P-Channel topology, and TO-263-3 (D2PAK) packaging. The FQB34P10TM provides higher current capability (33.5A vs. 27A) and lower on-state resistance, making it a direct drop-in replacement. No circuit modifications are required.

Q: What are the key differences between these two devices?

A: The primary differences are: (1) Product status—the 2SJ665-DL-E is obsolete while the FQB34P10TM is active; (2) Current rating—33.5A vs. 27A; (3) On-state resistance—60 mOhm vs. 77 mOhm; (4) Power dissipation—155W vs. 65W at Tc; (5) Operating temperature range—-55°C to 175°C vs. 150°C maximum; (6) Compliance—FQB34P10TM is ROHS3 compliant.

Q: Are there any gate drive considerations when substituting these parts?

A: Gate threshold voltage differs between the devices (4V for FQB34P10TM vs. 2.6V for 2SJ665-DL-E). Existing gate drive circuits designed for the 2SJ665-DL-E will operate the FQB34P10TM within specification. The higher threshold voltage of the substitute provides improved noise immunity in gate drive circuits.

Q: Does the FQB34P10TM fit the same PCB footprint?

A: Yes. Both devices use TO-263-3 (D2PAK) surface mount packaging with identical lead spacing and tab configuration. No PCB layout modifications are necessary.

Q: What is the impact of lower input capacitance in the FQB34P10TM?

A: The FQB34P10TM exhibits lower input capacitance (2910 pF vs. 4200 pF), reducing gate charge requirements and enabling faster switching transitions. This results in lower gate drive power consumption and improved switching performance.

Q: Is the FQB34P10TM suitable for high-temperature applications?

A: Yes. The FQB34P10TM operates to 175°C junction temperature, compared to 150°C for the 2SJ665-DL-E. This extended temperature range accommodates applications requiring higher thermal operating points.

Q: What is the significance of ROHS3 compliance for the FQB34P10TM?

A: ROHS3 compliance ensures the FQB34P10TM meets current environmental and hazardous substance restrictions applicable to electronic components in regulated markets. This certification is required for new product designs and production in many jurisdictions.