2SJ661-DL-E Equivalent & Substitute Parts

Part Overview

The 2SJ661-DL-E is a P-Channel MOSFET manufactured by onsemi, rated for 60V drain-to-source voltage with 38A continuous drain current at 25°C. This device is packaged in the TO-263-3 (D2PAK) surface mount configuration and is designed for applications requiring moderate to high current switching in P-channel configurations.

The 2SJ661-DL-E has reached obsolete product status. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for systems utilizing this component.

Substiute Parts

2SJ661-DL-E

onsemiIn Stock: 7992SJ661-DL-E Datasheet

Current PartRFQ

SUM55P06-19L-E3

Vishay SiliconixIn Stock: 16209SUM55P06-19L-E3 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the 2SJ661-DL-E is determined by strict alignment of the following electrical and mechanical parameters:

Electrical Compatibility Criteria:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 60V
• Continuous Drain Current (Id): Must equal or exceed 38A at 25°C
• Gate Threshold Voltage (Vgs(th)): Must be compatible with existing gate drive circuits
• Maximum Gate Voltage (Vgs Max): Must support ±20V operation
• On-Resistance (Rds On): Lower values indicate improved performance and reduced power dissipation
• Gate Charge (Qg): Lower values reduce switching losses and gate drive requirements
• Input Capacitance (Ciss): Lower values reduce gate drive power requirements

Mechanical Compatibility Criteria:

• Package Type: Must be TO-263-3 (D2PAK) surface mount configuration
• Mounting Type: Surface mount compatibility with existing PCB layouts
• Moisture Sensitivity Level (MSL): Must be MSL 1 or equivalent for unlimited shelf life

The SUM55P06-19L-E3 from Vishay Siliconix meets all substitution criteria through equivalent or superior electrical ratings and identical mechanical packaging.

Parameter Comparison

Engineering Selection Recommendations

Product Status Consideration: The 2SJ661-DL-E is classified as obsolete. The SUM55P06-19L-E3 is classified as active, ensuring continued availability and manufacturing support.

Compliance and Certification: The SUM55P06-19L-E3 carries RoHS3 compliance certification, whereas the 2SJ661-DL-E does not specify RoHS status. Both devices are REACH Affected or REACH Unaffected respectively and carry EAR99 ECCN classification. Both are rated under HTSUS code 8541.29.0095.

Electrical Performance: The SUM55P06-19L-E3 provides superior electrical characteristics across multiple parameters: 55A continuous drain current versus 38A, 19 mOhm on-resistance versus 39 mOhm, and 125W power dissipation capability versus 65W. These improvements result in reduced thermal stress and enhanced switching efficiency in applications operating near the 2SJ661-DL-E current limits.

Thermal and Temperature Range: The SUM55P06-19L-E3 supports an extended operating temperature range of -55°C to 175°C compared to the 2SJ661-DL-E maximum of 150°C, providing additional design margin for temperature-sensitive applications.

Mechanical Compatibility: Both devices utilize identical TO-263-3 (D2PAK) surface mount packaging, enabling direct PCB layout compatibility without redesign.

Frequently Asked Questions (FAQ)

Q: Can the SUM55P06-19L-E3 directly replace the 2SJ661-DL-E in existing designs?

A: Yes. Both devices share identical drain-to-source voltage ratings (60V), identical maximum gate voltage (±20V), identical package configuration (TO-263-3 D2PAK), and identical moisture sensitivity level (MSL 1). The SUM55P06-19L-E3 provides equal or superior electrical performance across all critical parameters.

Q: What is the significance of the higher gate charge (Qg) in the SUM55P06-19L-E3?

A: The SUM55P06-19L-E3 specifies 115 nC gate charge versus 80 nC for the 2SJ661-DL-E. This difference reflects the higher current capability (55A versus 38A) and lower on-resistance of the substitute device. Gate drive circuits must supply sufficient current to charge this capacitance within the required switching time. Existing gate drive designs rated for the 2SJ661-DL-E must be verified to accommodate this increased charge requirement.

Q: Are there differences in gate threshold voltage between these devices?

A: The 2SJ661-DL-E specifies Vgs(th) of 2.6V at 1mA, while the SUM55P06-19L-E3 specifies 3V at 250µA. These measurements are taken at different drain current levels, making direct comparison imprecise. Both values fall within typical P-channel MOSFET ranges and are compatible with standard gate drive voltage levels (±10V to ±20V).

Q: What advantage does the lower on-resistance of the SUM55P06-19L-E3 provide?

A: The SUM55P06-19L-E3 on-resistance of 19 mOhm at 30A, 10V is approximately 51% lower than the 2SJ661-DL-E specification of 39 mOhm at 19A, 10V. Lower on-resistance reduces conduction losses, decreases heat generation, and improves overall circuit efficiency. This is particularly beneficial in high-frequency switching applications and designs operating at elevated ambient temperatures.

Q: Is the extended operating temperature range of the SUM55P06-19L-E3 relevant for my application?

A: The SUM55P06-19L-E3 supports -55°C to 175°C junction temperature versus 150°C maximum for the 2SJ661-DL-E. If your application operates at temperatures approaching or exceeding 150°C, the substitute device provides additional thermal margin. For applications with maximum junction temperatures below 150°C, this extended range provides design flexibility for future thermal stress scenarios.

Q: Are there any gate drive circuit modifications required for substitution?

A: Gate drive circuits must supply sufficient current to charge the higher gate capacitance (115 nC) of the SUM55P06-19L-E3 within the required switching time. Verify that existing gate drive circuits can deliver the necessary charge current without exceeding maximum gate voltage limits (±20V). If gate drive current is marginal, circuit modifications may be necessary.

Q: How do the input capacitance values affect circuit design?

A: The SUM55P06-19L-E3 specifies 3500 pF input capacitance at 25V versus 4360 pF for the 2SJ661-DL-E at 20V. Lower input capacitance reduces gate drive power requirements and enables faster switching transitions. This difference is generally not significant for applications using standard gate drive circuits but may be relevant in high-frequency switching designs where gate drive power consumption is critical.

Q: What is the inventory status of these devices?

A: The 2SJ661-DL-E has 764 pieces in stock as a new original component but is classified as obsolete. The SUM55P06-19L-E3 has 16,170 pieces in stock and is classified as active, ensuring long-term availability and supply chain continuity.